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公开(公告)号：US4040079A
公开(公告)日：1977-08-02
申请号：US724760
申请日：1976-09-20
Applicant: Katsuo Hara , Minoru Hagino , Tokuzo Sukegawa
Inventor： Katsuo Hara , Minoru Hagino , Tokuzo Sukegawa
IPC: H01J1/308 , H01J9/02 , H01L29/161 , H01L27/14
Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.
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公开(公告)号：US3972060A
公开(公告)日：1976-07-27
申请号：US451754
申请日：1974-03-18
Applicant: Katsuo Hara , Minoru Hagino , Tokuzo Sukegawa
Inventor： Katsuo Hara , Minoru Hagino , Tokuzo Sukegawa
CPC classification number: H01J1/308
Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden band width is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.
Abstract translation: 一种半导体冷发射器件，包括至少两个不同的半导体和具有n型导电性的第一区域和p型导电性的第二区域以及有效禁带宽度小于 所述第一区域和用于向所述结点施加电压以使从所述第一区域注入到所述第二区域的电子从所述第二区域的表面发射到外部的装置。
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公开(公告)号：US3808477A
公开(公告)日：1974-04-30
申请号：US32158973
申请日：1973-01-08
Applicant: GEN ELECTRIC
Inventor： SWANK R
CPC classification number: H01J1/308
Abstract: A semiconductor cold cathode for emitting electrons into a vacuum is described as comprising a semiconductor substrate of a first conductivity type in contact with an electrode for forming a potential energy barrier therewith and having a heterogeneous network of conductors and open spaces for enhancing the emission of electrons into the vacuum. In another embodiment of the invention, the surface-adjacent portion of the semiconductor substrate in the regions underlying the network of conductors is doped with an opposite type conductivity impurity to increase the potential energy barrier in the substrate adjacent to the conductors so as to further enhance electron emission from the open spaces in the heterogeneous network. In yet another embodiment of the invention, the surface-adjacent region of the substrate is provided with a layer of opposite-type conductivity material so as to further increase the potential barrier at the grids and also to increase the energy level of the emitted electrons.
Abstract translation: 将用于将电子发射到真空中的半导体冷阴极描述为包括与用于形成势能势垒的电极接触的第一导电类型的半导体衬底，并且具有用于增强电子发射的导体和开放空间的异质网络 进入真空。 在本发明的另一个实施例中，在导体网络下面的区域中的半导体衬底的表面相邻部分掺杂有相反类型的导电杂质，以增加与导体相邻的衬底中的势垒，从而进一步增强 来自异构网络中的开放空间的电子发射。 在本发明的另一个实施例中，衬底的表面相邻区域设置有相反导电材料层，以便进一步增加栅格处的势垒，并且还增加发射电子的能级。
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公开(公告)号：US3742263A
公开(公告)日：1973-06-26
申请号：US3742263D
申请日：1971-04-19
Applicant: NAT RES DEV
Abstract: A device for injecting electric charge into fluids consists of a p-n junction diode having the junctions so positioned that an active region of the semi-conductor is in contact with the fluid. A reverse electric field of a magnitude sufficient to release charge carriers having energies greater than the potential barrier at the surface of the semi-conductor is applied to the junction so that charge carriers are emitted from the active region. An electrode is also immersed in the fluid to enable a drift field to be established to attract charge carriers in the fluid away from the surface of the semi-conductor.
Abstract translation: 用于将电荷注入流体的装置由p-n结二极管组成，该p-n结二极管具有如此定位使得半导体的有源区与流体接触的结。 足以释放具有大于半导体表面处的势垒的能量的电荷载流子的反向电场被施加到结，使得电荷载流子从有源区发射。 电极也浸没在流体中以使得能够建立漂移场以吸引流体中的电荷载体远离半导体的表面。
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公开(公告)号：US3290192A
公开(公告)日：1966-12-06
申请号：US47069365
申请日：1965-07-09
Applicant: MOTOROLA INC
Inventor： KELLEY DALE T
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Patent Agency Ranking
公开(公告)号：US3114070A
公开(公告)日：1963-12-10
申请号：US77995358
申请日：1958-12-12
Applicant: ASS ELECT IND MANCHESTER LTD
Inventor： ROBERT STRATTON
IPC: H01J1/308
CPC classification number: H01J1/308
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公开(公告)号：US20240145202A1
公开(公告)日：2024-05-02
申请号：US17979639
申请日：2022-11-02
Applicant: L3Harris Technologies, Inc.
Inventor： Bed PANTHA , Jacob J. BECKER , Jon D. BURNSED
IPC: H01J1/308
CPC classification number: H01J1/308
Abstract: A photocathode epitaxial structure. The photocathode epitaxial structure includes an improved substrate stack. The improved substrate stack includes a GaAs substrate and one or more additional layers formed on the GaAs substrate. The one or more additional layers are configured to provide an improved substrate stack surface with predetermined characteristics for forming a semiconductor device on the improved substrate stack surface. The photocathode epitaxial structure further includes an InGaAs p-type photocathode formed on the improved substrate stack surface. The InGaAs p-type photocathode has a predetermined percentage of In.
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公开(公告)号：US20160307722A1
公开(公告)日：2016-10-20
申请号：US15098108
申请日：2016-04-13
Applicant: Biqin HUANG , Christopher S. Roper , Tahir Hussain
Inventor： Biqin HUANG , Christopher S. Roper , Tahir Hussain
Abstract: A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.
Abstract translation: 一种半导体功率处理装置，包括阴极柱，围绕阴极柱的栅极和通过纳米真空间隙与阴极隔开的阳极。 一组半导体功率处理装置，每个包括阴极柱，围绕阴极柱的栅极和通过纳米真空间隙与阴极柱间隔开的阳极。 半导体功率处理装置可以被布置为行和列并且可以互连以满足各种应用的要求。 功率处理装置的阵列可以在单个基板上制造。
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公开(公告)号：US09378920B2
公开(公告)日：2016-06-28
申请号：US14600000
申请日：2015-01-19
Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
Inventor： Peng Liu , De-Jie Li , Chun-Hai Zhang , Duan-Liang Zhou , Bing-Chu Du , Shou-Shan Fan
CPC classification number: H01J29/04 , H01B1/04 , H01J1/304 , H01J1/308 , H01J1/312 , H01J29/18 , H01J31/12 , H01J31/127 , H01J2201/30469 , H01J2201/3125 , H01J2329/0455 , H01J2329/0478 , H01J2329/0484
Abstract: An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an electron collection layer, an insulating layer, and a second electrode stacked with each other, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer.
Abstract translation: 电子发射装置包括彼此间隔开的多个电子发射单元，其中多个电子发射单元中的每一个包括第一电极，半导体层，电子收集层，绝缘层和每个电子发射单元堆叠的第二电极 另一方面，电子收集层与半导体层和绝缘层接触，并且电子收集层是导电层。
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110.发明申请Nanoparticle-Templated Lithographic Patterning of Nanoscale Electronic Components 有权纳米级电子元件的纳米粒子模板平版印刷图案公开(公告)号：US20160181051A1
公开(公告)日：2016-06-23
申请号：US14947773
申请日：2015-11-20
Applicant: Elwha LLC
Inventor： Max N. Mankin , Tony S. Pan
CPC classification number: H01J9/025 , H01J1/3044 , H01J1/308 , H01J2201/30411 , H01J2201/30469 , H01J2201/30492 , H01J2209/0223 , H01J2237/06341 , H01L21/3065 , H01L31/0352
Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.
Abstract translation: 真空电子设备的一些实施例需要纳米尺度场增强几何形状。 本文描述了使用纳米颗粒制造纳米尺度场增强几何形状的方法和装置。 真空电子设备的其他实施例要求在纳米级或微米尺度上控制控制栅极和电极之间的间隔的方法，并且这里描述了这种方法。
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