Wafer holder and semiconductor manufacturing apparatus equipped with wafer holder
    101.
    发明申请
    Wafer holder and semiconductor manufacturing apparatus equipped with wafer holder 审中-公开
    晶圆架和半导体制造装置配有晶圆座

    公开(公告)号:US20080083979A1

    公开(公告)日:2008-04-10

    申请号:US11544725

    申请日:2006-10-10

    CPC classification number: H01J37/32559 H01J37/32091 H01J2237/2001

    Abstract: A wafer holder for a semiconductor manufacturing apparatus is provided with which a film may be evenly formed over the entire wafer surface and the incidence of particle generation is low, as well as a semiconductor manufacturing apparatus equipped with same.The wafer holder of the present invention is a ceramic wafer holder in which a heating body and a high-frequency electrode are embedded, and a diameter of the high-frequency electrode embedded in the ceramic is greater than the diameter of an upper high-frequency electrode disposed opposite the high-frequency electrode. A main component of the ceramic is preferably aluminum nitride, and the high-frequency electrode is preferably in the form of a film.

    Abstract translation: 提供了一种半导体制造装置的晶片保持器,其中可以在整个晶片表面上均匀地形成膜并且颗粒产生的发生率低,以及配备其的半导体制造装置。 本发明的晶片保持器是嵌入加热体和高频电极的陶瓷晶片保持器,嵌入陶瓷的高频电极的直径大于上部高频的直径 电极与高频电极相对设置。 陶瓷的主要成分优选为氮化铝,高频电极优选为膜状。

    SUBSTRATE SUPPORTING MECHANISM AND SUBSTRATE PROCESSING APPARATUS
    102.
    发明申请
    SUBSTRATE SUPPORTING MECHANISM AND SUBSTRATE PROCESSING APPARATUS 失效
    基板支撑机构和基板加工设备

    公开(公告)号:US20080066682A1

    公开(公告)日:2008-03-20

    申请号:US11690425

    申请日:2007-03-23

    Applicant: Jun Yamashita

    Inventor: Jun Yamashita

    Abstract: A substrate supporting mechanism includes a function for heating a substrate placed thereon in a process container of a substrate processing apparatus. The substrate supporting mechanism includes a worktable configured to place the substrate thereon and including a heating element made of silicon carbide and formed in a predetermined pattern; an electric feeder electrode configured to supply electricity to the heating element; and a partition member made of an electrically insulating material and interposed between portions adjacent to each other in the heating element formed in the predetermined pattern.

    Abstract translation: 基板支撑机构包括用于将其上放置的基板加热到基板处理装置的处理容器中的功能。 基板支撑机构包括:工作台,其配置为将基板放置在其上并且包括由碳化硅制成并以预定图案形成的加热元件; 配置为向所述加热元件供电的供电电极; 以及由电绝缘材料制成的分隔构件,并且设置在以预定图案形成的加热元件中彼此相邻的部分之间。

    SUBSTRATE TREATMENT APPARATUS AND CLEANING METHOD
    103.
    发明申请
    SUBSTRATE TREATMENT APPARATUS AND CLEANING METHOD 审中-公开
    基板处理装置和清洁方法

    公开(公告)号:US20080041308A1

    公开(公告)日:2008-02-21

    申请号:US11830156

    申请日:2007-07-30

    Abstract: A substrate treating apparatus and related cleaning method are disclosed. The apparatus includes a stage heater disposed in the reaction chamber, serving as a first electrode during the generation of in-situ plasma, and supporting a substrate, a shower head disposed in the reaction chamber opposing the stage heater, serving as a second electrode during the generation of the in-situ plasma, and supplying a reaction gas into the reaction chamber, a remote plasma generator disposed external to the reaction chamber and configured to supply a cleaning gas to the reaction chamber following activation of the cleaning gas, and a gas transmitter disposed between the reaction chamber and the remote plasma generator and configured to transmit the reaction gas and the cleaning gas to the shower head.

    Abstract translation: 公开了一种基板处理装置及其相关的清洁方法。 该装置包括设置在反应室中的级加热器,用于在原位等离子体生成期间作为第一电极,并且支撑基板,设置在与级加热器相对的反应室中的淋浴喷头,用作第二电极 产生原位等离子体,并将反应气体供应到反应室中;远程等离子体发生器,其设置在反应室外部并且构造成在清洁气体活化后向反应室供应清洁气体;气体 发射器设置在反应室和远程等离子体发生器之间,并被配置为将反应气体和清洁气体传输到淋浴头。

    Chuck assembly and method for controlling a temperature of a chuck
    104.
    发明申请
    Chuck assembly and method for controlling a temperature of a chuck 审中-公开
    卡盘组件和控制卡盘温度的方法

    公开(公告)号:US20080023926A1

    公开(公告)日:2008-01-31

    申请号:US11826313

    申请日:2007-07-13

    Applicant: Young-Han Kim

    Inventor: Young-Han Kim

    Abstract: Exemplary embodiments relate to a chuck assembly. The chuck assembly may include a chuck having a first channel having a fluid circulating therein, and a temperature control system adapted to maintain a temperature of the fluid within a first temperature range and vary the maintained temperature range of the fluid to a second temperature range from the first temperature range.

    Abstract translation: 示例性实施例涉及卡盘组件。 卡盘组件可以包括具有在其中循环的流体的第一通道的卡盘和适于将流体的温度维持在第一温度范围内并将流体的维持的温度范围改变到第二温度范围的温度控制系统, 第一个温度范围。

    Plasma processing apparatus
    105.
    发明申请
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号:US20080023147A1

    公开(公告)日:2008-01-31

    申请号:US11512081

    申请日:2006-08-30

    CPC classification number: H01L21/67109 H01J37/32431 H01J2237/2001

    Abstract: In a plasma processing apparatus equipped with a vacuum vessel and a sample table which is arranged within the vacuum vessel and has a sample mounting plane where a sample is mounted on an upper portion, for forming plasma within the processing chamber so as to process a sample mounted on the sample mounting plane, the plasma processing apparatus includes: a space arranged inside the sample table, into which a coolant is supplied; a ceiling plane of the space arranged opposite to the sample mounting plane, with which the coolant collides from plural portions; and an exhaust port via which the coolant which has collided with the ceiling plane to be evaporated is exhausted from the sample table.

    Abstract translation: 在配备有真空容器和样品台的等离子体处理装置中,其设置在真空容器内并具有样品安装面,样品安装在上部,用于在处理室内形成等离子体,以便处理样品 安装在样品安装平面上的等离子体处理设备包括:布置在样品台内部的空间,供应冷却剂的空间; 与样品安装平面相对的空间的顶板,冷却剂与多个部分碰撞; 以及与待蒸发的顶板相撞的冷却剂通过该排气口从样品台排出。

    Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis
    107.
    发明授权
    Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis 有权
    被配置为在测量过程中减少抗蚀剂变形的系统以及用于减少分析期间样品变化的系统和方法

    公开(公告)号:US07304302B1

    公开(公告)日:2007-12-04

    申请号:US11215745

    申请日:2005-08-29

    Abstract: Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

    Abstract translation: 提供了在计量过程中减少抗蚀剂失真的各种系统。 该系统包括电子束计量工具,其被配置为测量形成在样本上的一个或多个抗蚀剂特征的一个或多个特性。 电子束计量工具可以被配置为扫描电子显微镜。 抗蚀剂可以设计用于在约193nm的波长下曝光。 一个系统包括一个冷却子系统,该冷却子系统被配置成在由该工具进行的测量期间改变样品的温度,使得抗蚀剂特征在测量期间基本上不失真。 另一种系统包括干燥子系统,该干燥子系统被配置为通过电子束计量工具在测量期间减少靠近样本的水分,使得抗蚀剂特征在测量期间基本上不失真。 另外的系统可以包括冷却子系统和干燥子系统。

    Particle-optical apparatus with temperature switch
    108.
    发明申请
    Particle-optical apparatus with temperature switch 有权
    带温度开关的粒子光学仪器

    公开(公告)号:US20070252090A1

    公开(公告)日:2007-11-01

    申请号:US11796975

    申请日:2007-04-30

    CPC classification number: H01J37/20 H01J2237/2001

    Abstract: The invention relates to a thermal switch for particle-optical apparatus. In, for example, a cryo-TEM (transmission electron microscope), a sample 34 that is placed at an extremity 20 of a sample holder 7 can be maintained at, for example, the temperature of liquid nitrogen. There is a need to be able to inspect a sample at, for example, room temperature in a simple manner, without heating the microscope as a whole from the cryogenic temperature to room temperature. By using the thermal switch 40, this becomes possible. To this end, the thermal switch changes the thermal path between a cold source 22 in the apparatus and the extremity 20 of the sample holder 7, whereby, in one position, position 46a, a connection is made from the extremity 20 to the cold source 22, and, in the other position, position 46b, a connection is made to a portion 44 of the apparatus that is maintained at room temperature.

    Abstract translation: 本发明涉及一种用于粒子光学装置的热开关。 例如,在冷冻TEM(透射电子显微镜)中,放置在样品保持器7的末端20的样品34可以保持在例如液氮的温度。 需要能够以简单的方式在例如室温下检查样品,而不将整个显微镜从低温至室温加热。 通过使用热敏开关40,这成为可能。 为此,热开关改变设备中的冷源22和样品保持器7的末端20之间的热路径,由此在一个位置中,位置46 从末端20到冷源22,并且在另一位置,位置46 ,连接到设备的保持在室温的部分44。

    System and method for electron-beam lithography
    110.
    发明授权
    System and method for electron-beam lithography 失效
    电子束光刻系统和方法

    公开(公告)号:US07276709B2

    公开(公告)日:2007-10-02

    申请号:US11109861

    申请日:2005-04-20

    Abstract: To achieve high-resolution lithography, the temperature of a sample is controlled with heater wires during electron-beam lithography, the adverse effect of a magnetic field induced by the heater current is suppressed. Namely, heater wires are used to control the temperature of a sample so that the temperature will be maintained constant. In order to minimize the adverse effect of a magnetic field during the passage of currents through the heater wires, two heater wires are layered with the arrangement of the upper and lower sides, currents are fed to flow through the heater wires in mutually opposite directions, and the ratio of the current flowing through the upper heater wire to the one flowing through the lower heater wire is slightly changed from zero.

    Abstract translation: 为了实现高分辨率光刻,在电子束光刻期间用加热器线控制样品的温度,抑制由加热器电流引起的磁场的不利影响。 即,使用加热丝来控制样品的温度,使得温度保持恒定。 为了最小化在通过加热线的电流通过期间的磁场的不利影响,两个加热丝线被上下排列地层叠,电流被馈送以相互相反的方向流过加热丝, 并且流过上加热线的电流与流过下加热丝的流的比例从零开始稍微变化。

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