Anisotropic electrically conductive film and connection structure
    112.
    发明授权
    Anisotropic electrically conductive film and connection structure 有权
    各向异性导电膜和连接结构

    公开(公告)号:US08361614B2

    公开(公告)日:2013-01-29

    申请号:US12302640

    申请日:2008-04-22

    Abstract: An anisotropic electrically conductive film formed by a thermosetting acrylic resin composition is disclosed. The composition contains at least a thermosetting agent (A), a thermo-settable ingredient (B), an acrylic rubber containing hydroxyl groups (C), organic fine particles (D) and electrically conductive particles (E). The thermo-settable ingredient (B) may include a phosphorus-containing acrylic ester (b1). The weight averaged molecular weight of the acrylic rubber containing the hydroxyl groups (C) is not less than 1000000. The organic fine particles (D) include polybutadiene-based fine particles (d1).

    Abstract translation: 公开了由热固性丙烯酸树脂组合物形成的各向异性导电膜。 该组合物至少含有热固性剂(A),热固性成分(B),含有羟基的丙烯酸类橡胶(C),有机细颗粒(D)和导电性颗粒(E)。 热固性成分(B)可以包括含磷丙烯酸酯(b1)。 含有羟基(C)的丙烯酸类橡胶的重均分子量不小于1000000.有机细颗粒(D)包括聚丁二烯基微粒(d1)。

    PRODUCTION METHOD OF METALLIZED CERAMIC SUBSTRATE
    114.
    发明申请
    PRODUCTION METHOD OF METALLIZED CERAMIC SUBSTRATE 有权
    金属化陶瓷基板的生产方法

    公开(公告)号:US20130001199A1

    公开(公告)日:2013-01-03

    申请号:US13581668

    申请日:2011-02-21

    Inventor: Naoto Takahashi

    Abstract: The present invention provides a method of forming a fine pattern by the post-firing method. The production method of a metallized ceramic substrate comprises: a first step of forming an organic base layer on a ceramic substrate; a second step of forming a metal paste layer on the organic base layer to produce a metallized ceramic substrate precursor; and a third step of firing the metallized ceramic substrate precursor, wherein the organic base layer is a layer which absorbs a solvent in the metal paste layer and thermally decomposes at a temperature of firing the metal paste layer.

    Abstract translation: 本发明提供通过后焙烧法形成精细图案的方法。 金属化陶瓷基板的制造方法包括:在陶瓷基板上形成有机基底层的第一工序; 在所述有机基底层上形成金属糊料层以制造金属化陶瓷基板前体的第二步骤; 以及烧制所述金属化陶瓷基板前体的第三工序,其中,所述有机基底层是吸收所述金属糊料层中的溶剂并在所述金属糊料层的烧成温度下热分解的层。

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