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    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES
    121.
    发明申请
    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES 有权
    在CMOS兼容基板上制作微电子开关的方法

    公开(公告)号：US20030148550A1

    公开(公告)日：2003-08-07

    申请号：US10014660

    申请日：2001-11-07

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    IPC: H01L021/00

    CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

    Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    Abstract translation: 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

    Trilayered beam MEMS device and related methods
    122.
    发明申请
    Trilayered beam MEMS device and related methods 有权
    三层梁MEMS器件及相关方法

    公开(公告)号：US20030119221A1

    公开(公告)日：2003-06-26

    申请号：US10290920

    申请日：2002-11-08

    Applicant: Coventor, Inc.

    Inventor： Shawn Jay Cunningham ,  Svetlana Tatic-Lucic

    IPC: H01L021/00 ,  H01L029/82

    CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

    Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

    Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

    Electronic microcomponent of the variable capacitor or microswitch type, and process for fabricating such a component
    124.
    发明申请
    Electronic microcomponent of the variable capacitor or microswitch type, and process for fabricating such a component 失效
    可变电容器或微型开关类型的电子微组件，以及用于制造这种部件的工艺

    公开(公告)号：US20010040250A1

    公开(公告)日：2001-11-15

    申请号：US09858092

    申请日：2001-05-15

    Applicant: Memscap

    Inventor： Catherine Charrier ,  Eric Bouchon ,  Alain Campo ,  Guy Imbert ,  Francois Valentin ,  Laurent Basteres

    IPC: H01L021/8234

    CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0197 ,  H01G5/16 ,  H01H1/0036

    Abstract: Process for fabricating electronic components, of the variable capacitor or microswitch type, comprising a fixed plate (1) and a deformable membrane (20) which are located opposite each other, which comprises the following steps, consisting in: depositing a first metal layer on an oxide layer (2), said first metal layer being intended to form the fixed plate; depositing a metal ribbon (10, 11) on at least part of the periphery and on each side of the fixed plate (1), said ribbon being intended to serve as a spacer between the fixed plate (1) and the deformable membrane (20); depositing a sacrificial resin layer (15) over at least the area of said fixed plate (1); generating, by lithography, a plurality of wells in the surface of said sacrificial resin layer; depositing, by electrolysis, inside the wells formed in the sacrificial resin (15), at least one metal region intended to form the deformable membrane (20), this metal region extending between sections of the metal ribbon (10, 11) which are located on each side of said fixed plate (1); removing the sacrificial resin layer (15).

    Abstract translation: 用于制造可变电容器或微型开关类型的电子部件的方法包括彼此相对定位的固定板（1）和可变形膜（20），其包括以下步骤：将第一金属层沉积在 氧化物层（2），所述第一金属层旨在形成所述固定板; 在固定板（1）的周边的至少一部分和每一侧上沉积金属带（10,11），所述带旨在用作固定板（1）和可变形膜（20）之间的间隔件 ）; 在所述固定板（1）的至少所述区域上沉积牺牲树脂层（15）; 通过光刻产生在所述牺牲树脂层的表面中的多个孔; 通过电解在形成在牺牲树脂（15）中的阱内沉积旨在形成可变形膜（20）的至少一个金属区域，该金属区域在位于金属带（10,11）的部分之间延伸 在所述固定板（1）的每一侧上; 去除牺牲树脂层（15）。

    MEMS bridge devices and methods of manufacture thereof
    127.
    发明授权
    MEMS bridge devices and methods of manufacture thereof 有权

    公开(公告)号：US11834327B2

    公开(公告)日：2023-12-05

    申请号：US16585242

    申请日：2019-09-27

    Applicant: SOFANT TECHNOLOGIES LTD.

    Inventor： Nakul Haridas ,  Victor Steel

    IPC: B81B7/00 ,  H01H59/00 ,  H01Q1/50 ,  H01P1/18 ,  H01P3/08 ,  H01P11/00

    CPC classification number: B81B7/0006 ,  H01H59/0009 ,  H01P1/18 ,  H01P3/08 ,  H01P11/00 ,  H01Q1/50 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0109 ,  B81B2203/019 ,  B81B2203/0181 ,  B81B2203/0307 ,  H01H2239/006 ,  H01H2239/018

    Abstract: A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor, the MEMS bridge comprising an electrically conductive switching portion, the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region, the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a said ground conductor, the electrically conductive switching region being movable relative to the said signal and ground conductors respectively to thereby change the inductances between the switching signal conductor region and the signal conductor and between the switching ground conductor region and the respective ground conductor, wherein there is no continuous electrically conductive path extending from the switching conductor region to the at least one anchor. Capacative and ohmic switches, a varactor, a phase shifter, a tuneable power splitter/combiner, tuneable attenuator, SPDT switch and antenna apparatus comprising said devices.

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