公开(公告)号：US20190002276A1

公开(公告)日：2019-01-03

申请号：US15405558

申请日：2017-01-13

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Risto MUTIKAINEN ,  Juha LAHDENPERÄ

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0022 ,  B81B3/0051 ,  B81B2201/0221 ,  B81B2201/025 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00674

Abstract: A sensor device and a method for manufacturing the sensor device. The sensor device is equipped with an impact element that includes an inner part of dielectric bulk material and an outer part of diamond-like coating material. The inner part is made to be lower at the edges than in the middle, and the outer part is formed of a diamond-like coating layer that covers the inner part. The DLC coated impact element is mechanically more robust than the rectangular prior art structures. Furthermore, the tapered form of the impact element improves conductivity of the DLC coating such that discharge of static buildup in the impact element is effectively enabled.

公开(公告)号：US20180209790A1

公开(公告)日：2018-07-26

申请号：US15742756

申请日：2016-05-24

Applicant: Robert Bosch GmbH

Inventor： Patrick Wellner ,  Burkhard Kuhlmann ,  Mirko Hattass

IPC: G01C19/5733

CPC classification number: G01C19/5733 ,  B81B2201/025 ,  G01C19/5719

Abstract: A rotation rate sensor including a substrate having a principal plane of extension, and a structure movable with respect to the substrate; the structure being excitable from a neutral position into an oscillation having a movement component substantially parallel to a driving direction, which is substantially parallel to the principal plane of extension. To induce the oscillation, the rotation rate sensor includes a comb electrode moved along with the structure and a comb electrode fixed in position relative to the substrate. The excitation is produced by applying a voltage to the moving comb electrode and/or to the stationary comb electrode. Due to a rotation rate of the rotation rate sensor about an axis running substantially perpendicularly to the driving direction and substantially perpendicularly to the detection direction, a force applied to the structure with a force component along a detection direction substantially perpendicular to the driving direction is detectable.

公开(公告)号：US20180127267A1

公开(公告)日：2018-05-10

申请号：US15864787

申请日：2018-01-08

Applicant: Infineon Technologies AG

Inventor： Bernhard Winkler ,  Rainer Leuschner ,  Horst Theuss

IPC: B81B7/00 ,  G01L19/14 ,  G01L9/00 ,  H01L29/84 ,  G01L15/00

CPC classification number: B81B7/0058 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/015 ,  B81C2203/0154 ,  G01L9/0054 ,  G01L15/00 ,  G01L19/141 ,  G01L19/148 ,  H01L29/84 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (MEMS) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port.

公开(公告)号：US20180079642A1

公开(公告)日：2018-03-22

申请号：US15723004

申请日：2017-10-02

Applicant: Brigham Young University

Inventor： Robert C. Davis ,  Richard R. Vanfleet

IPC: B81C1/00 ,  B81B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y15/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2201/025 ,  B81C1/00619 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: A microscale device may include a patterned forest of vertically grown and aligned carbon nanotubes defining a carbon nanotube forest with the nanotubes having a height defining a thickness of the forest. The patterned forest may define a patterned frame that defines one or more components of the microscale device. The microscale device may also include a conformal coating of substantially uniform thickness extending throughout the carbon nanotube forest. The carbon nanotube forest may have a thickness of at least three microns. The conformal coating may substantially coat the nanotubes, define coated nanotubes and connect adjacent nanotubes together such that the carbon nanotube forest is sufficiently robust for liquid processing, without substantially filling interstices between individual coated nanotubes. The microscale device may also include a metallic interstitial material infiltrating the carbon nanotube forest and at least partially filling interstices between individual coated nanotubes.

公开(公告)号：US09880000B2

公开(公告)日：2018-01-30

申请号：US14938268

申请日：2015-11-11

Applicant: Seiko Epson Corporation

Inventor： Teruo Takizawa ,  Atsuki Naruse ,  Shigekazu Takagi

IPC: G01P15/00 ,  G01C19/5769 ,  G01C19/5712 ,  G01P15/125 ,  G01P15/08 ,  B81C1/00

CPC classification number: G01C19/5769 ,  B81B2201/025 ,  B81C1/00293 ,  B81C1/00301 ,  B81C2203/0145 ,  G01C19/5712 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: A manufacturing method of an inertial sensor which includes a movable body that is disposed in a cavity formed by a base body and a lid, and in which a wiring groove of wiring communicating with the cavity and electrically connected to the movable body is formed in the base body, includes forming a first opening section, which does not penetrate through the lid by wet etching; accommodating the movable body in the cavity by bonding the base body and the lid; forming a first sealing material with which the wiring groove is sealed after the accommodating of the movable body; forming a through-hole communicating with the cavity by penetrating through the first opening section by dry etching after the forming of the first sealing material; and forming a second sealing material with which the through-hole is sealed.

公开(公告)号：US09850125B2

公开(公告)日：2017-12-26

申请号：US15041886

申请日：2016-02-11

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81B7/02 ,  B81C1/00 ,  H01L23/00 ,  H01L23/10 ,  H01L25/00

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C1/00238 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/0792 ,  H01L23/10 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/291 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/32145 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2224/3012 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/00

Abstract: A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure.

公开(公告)号：US20170217766A1

公开(公告)日：2017-08-03

申请号：US15484765

申请日：2017-04-11

Applicant: Intel IP Corporation

Inventor： Gerald Ofner ,  Thorsten Meyer ,  Reinhard Mahnkopf ,  Christian Geissler ,  Andreas Augustin

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/10 ,  B81B2207/012 ,  B81B2207/053 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.

公开(公告)号：US09709451B2

公开(公告)日：2017-07-18

申请号：US14592610

申请日：2015-01-08

Applicant: Robert Bosch GmbH

Inventor： Arnd Kaelberer ,  Jochen Reinmuth ,  Johannes Classen

IPC: G01L9/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  B81B7/02

CPC classification number: G01L9/0072 ,  B81B3/0037 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  B81C1/00158 ,  B81C1/00246 ,  G01P15/0802 ,  G01P15/125

Abstract: A micromechanical pressure sensor device includes: an MEMS wafer having a front side and a rear side; a first micromechanical functional layer formed above the front side of the MEMS wafer; and a second micromechanical functional layer formed above the first micromechanical functional layer. A deflectable first pressure detection electrode is formed in one of the first and second micromechanical functional layers. A fixed second pressure detection electrode is formed spaced apart from and opposite the deflectable first pressure detection electrode. An elastically deflectable diaphragm area is formed above the front side of the MEMS wafer. An external pressure is applied to the diaphragm area via an access opening in the MEMS wafer, and the wafer is connected to the deflectable first pressure detection electrode via a plug-like joining area.

公开(公告)号：US09688531B2

公开(公告)日：2017-06-27

申请号：US15191160

申请日：2016-06-23

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Lorenzo Baldo ,  Enri Duqi ,  Flavio Francesco Villa

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0045 ,  B81B3/0072 ,  B81B2201/0228 ,  B81B2201/025 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00182 ,  B81C1/00325 ,  B81C2201/0116 ,  B81C2201/0173 ,  B81C2203/0785 ,  G02B26/0858

Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

公开(公告)号：US09618532B2

公开(公告)日：2017-04-11

申请号：US15081507

申请日：2016-03-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giulio Ricotti ,  Alberto Pagani ,  Fulvio Vittorio Fontana ,  Ubaldo Mastromatteo

IPC: G01P15/11 ,  G01P15/105 ,  G01P15/08 ,  B81B7/00 ,  B81C1/00 ,  G01C19/5783 ,  G01P15/097

CPC classification number: G01P15/11 ,  B81B7/008 ,  B81B2201/025 ,  B81B2207/012 ,  B81C1/0023 ,  G01C19/5783 ,  G01P15/0802 ,  G01P15/097 ,  G01P15/105 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014

Abstract: An inertial sensor having a body with an excitation coil and a first sensing coil extending along a first axis. A suspended mass includes a magnetic-field concentrator, in a position corresponding to the excitation coil, and configured for displacing by inertia in a plane along the first axis. A supply and sensing circuit is electrically coupled to the excitation coil and to the first sensing coil, and is configured for generating a time-variable flow of electric current that flows in the excitation coil so as to generate a magnetic field that interacts with the magnetic-field concentrator to induce a voltage/current in the sensing coil. The integrated circuit is configured for measuring a value of the voltage/current induced in the first sensing coil so as to detect a quantity associated to the displacement of the suspended mass along the first axis.