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公开(公告)号：US20230322546A1
公开(公告)日：2023-10-12
申请号：US18328129
申请日：2023-06-02
Inventor： Sergiu LANGA , Bert KAISER , Anton MELNIKOV , Jorge Mario MONSALVE GUARACAO
CPC classification number: B81B3/0021 , B81C1/00198 , B81B2201/0257 , B81B2203/0315 , B81B2203/033 , B81B2203/04 , B81B2203/053 , B81C2201/013 , B81C2203/032 , B81C2203/035
Abstract: A MEMS device includes a layer stack having a plurality of MEMS layers arranged along a layer stack direction. The MEMS device includes a movable element formed in a first MEMS layer and arranged between a second MEMS layer and a third MEMS layer of the layer stack. A driving unit is further provided, comprising a first drive structure mechanically firmly connected to the movable element and a second drive structure mechanically firmly connected to the second MEMS layer. The driving unit is configured to generate on the movable member a drive force perpendicular to the layer stack direction, and the drive force is configured to deflect the movable member.
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公开(公告)号：US20230174373A1
公开(公告)日：2023-06-08
申请号：US17742425
申请日：2022-05-12
Inventor： Wooicheang Goh , Kahkeen Lai
CPC classification number: B81C1/00269 , B81B7/0054 , B81B2201/0257 , B81C2203/019 , B81C2201/013 , B81B2203/0127
Abstract: Provided is a sealed cavity structure, including a base; an upper cover fixed to the base in a covering manner and defining a cavity jointly with the base; a leak hole that passes through the upper cover and communicates the cavity with outside; a sealing cover plate attached and fixed to an outer surface of the upper cover and completely covering the leak hole to seal the leak hole; and a sealing cap including a cap wall pressed on a side of the sealing cover plate away from the leak hole and a cap sidewall extending from the cap wall toward a direction close to the upper cover and fixed, in an abutting manner, to the upper cover. A method for manufacturing a sealed cavity structure is further provided. In this technical solution, better sealing reliability can be achieved.
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公开(公告)号：US20180362330A9
公开(公告)日：2018-12-20
申请号：US15024711
申请日：2014-09-19
Applicant: MOTION ENGINE INC.
Inventor： Robert Mark Boysel
CPC classification number: B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2207/012 , B81B2207/015 , B81B2207/07 , B81B2207/095 , B81C1/00238 , B81C2201/013 , B81C2203/0792
Abstract: A MEMS and a method of manufacturing MEMS components are provided. The method includes providing a MEMS wafer stack including a top cap wafer, a MEMS wafer and optionally a bottom cap wafer. The MEMS wafer has MEMS structures patterned therein. The MEMS wafer and the cap wafers include insulated conducting channels forming insulated conducting pathways extending within the wafer stack. The wafer stack is bonded to an integrated circuit wafer having electrical contacts on its top side, such that the insulated conducting pathways extend from the integrated circuit wafer to the outer side of the top cap wafer. Electrical contacts on the outer side of the top cap wafer are formed and are electrically connected to the respective insulated conducting channels of the top cap wafer. The MEMS wafer stack and the integrated circuit wafer are then diced into components having respective sealed chambers and MEMS structures housed therein.
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公开(公告)号：US20180288549A1
公开(公告)日：2018-10-04
申请号：US16001032
申请日：2018-06-06
Inventor： Jung-Huei Peng , Chia-Hua Chu , Chun-wen Cheng , Chin-Yi Cho , Li-Min Hung , Yao-Te Huang
CPC classification number: H04R31/003 , B81C1/00158 , B81C2201/0125 , B81C2201/013 , B81C2201/053 , B81C2203/036 , H04R19/005 , H04R19/04 , H04R31/006 , H04R2201/003 , H04R2307/027
Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
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125.发明申请公开(公告)号：US20180244514A1
公开(公告)日：2018-08-30
申请号：US15957058
申请日：2018-04-19
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. JAHNES , Anthony K. STAMPER
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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Patent Agency Ranking
126.发明授权公开(公告)号：US10062517B2
公开(公告)日：2018-08-28
申请号：US15374719
申请日：2016-12-09
Applicant: wiSpry, Inc.
Inventor： Arthur S. Morris, III , Dana DeReus , Norito Baytan
CPC classification number: H01G5/16 , B81B3/0008 , B81B3/0016 , B81B3/0051 , B81B2201/0221 , B81C1/00166 , B81C1/00476 , B81C2201/0109 , B81C2201/013 , H01G5/18 , H01G7/00
Abstract: Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.
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公开(公告)号：US20180230001A1
公开(公告)日：2018-08-16
申请号：US15434242
申请日：2017-02-16
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Kai-Fung Chang , Lien-Yao Tsai , Len-Yi Leu
CPC classification number: B81B3/0005 , B81B2207/095 , B81C1/00269 , B81C1/00912 , B81C1/0092 , B81C1/00952 , B81C1/00984 , B81C2201/013 , B81C2201/0149 , B81C2203/019 , B81C2203/035
Abstract: A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.
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128.发明授权公开(公告)号：US10011477B2
公开(公告)日：2018-07-03
申请号：US15437727
申请日：2017-02-21
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. Jahnes , Anthony K. Stamper
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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公开(公告)号：US09938133B2
公开(公告)日：2018-04-10
申请号：US15097808
申请日：2016-04-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Mohsin Nawaz , Alfons Dehe , Heiko Froehlich , Alessia Scire , Steffen Bieselt
CPC classification number: B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0136 , B81C1/00166 , B81C1/00182 , B81C2201/013
Abstract: According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.
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130.发明申请公开(公告)号：US20180093882A1
公开(公告)日：2018-04-05
申请号：US15698459
申请日：2017-09-07
Applicant: SEIKO EPSON CORPORATION
Inventor： Masashi YOSHIIKE
CPC classification number: B81B7/007 , B41J2/14 , B41J2/14233 , B41J2/1607 , B41J2/161 , B41J2/1621 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2002/14362 , B41J2002/14491 , B81B2201/052 , B81B2207/07 , B81C1/00301 , B81C2201/013
Abstract: There is provided a MEMS device including: a substrate having a resin portion that protrudes from one surface thereof and is made of a resin, in which the first wiring extends along a first direction on the one surface from a position overlapping the resin portion to a position deviating from the resin portion, and in which a width of the resin portion is equal to or larger than a width of the first wiring covering the resin portion in a second direction intersecting the first direction.
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