公开(公告)号：US20050045276A1

公开(公告)日：2005-03-03

申请号：US10922565

申请日：2004-08-19

Applicant: Satyadev Patel ,  Andrew Huibers ,  Gregory Schaadt ,  Peter Heureux

Inventor： Satyadev Patel ,  Andrew Huibers ,  Gregory Schaadt ,  Peter Heureux

IPC: B81B3/00 ,  C23F1/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC classification number: B81C1/00476 ,  B81C1/00547 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/112 ,  B82Y30/00

Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构，包括：提供衬底; 在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体，以允许蚀刻剂气体在物理或化学和物理上移除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。 该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料，包括：执行第一蚀刻以去除硅的一部分，第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂 物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅，第二蚀刻包括提供蚀刻剂气体，其化学地但不物理地蚀刻附加的硅。

公开(公告)号：US20050037135A1

公开(公告)日：2005-02-17

申请号：US10641547

申请日：2003-08-15

Applicant: Xiaoyang Zhu

Inventor： Xiaoyang Zhu

IPC: B05D1/18 ,  B05D5/08 ,  B81B3/00 ,  B81C1/00 ,  C09D4/00 ,  B05D5/12 ,  C23C16/00

CPC classification number: C09D4/00 ,  B05D1/185 ,  B05D5/083 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/112 ,  B82Y30/00 ,  C08G77/04 ,  C08G77/24

Abstract: The present invention provides unique methods of coating and novel coatings for MEMS devices. In general a two step process includes the coating of a first silane onto a substrate surface followed by a second treatment with or without a second silane and elevated temperatures.

Abstract translation: 本发明提供了用于MEMS器件的独特的涂层方法和新型涂层。 通常，两步法包括将第一硅烷涂覆在基材表面上，随后进行第二次硅烷处理或不使用第二硅烷和升高的温度。

公开(公告)号：US06787968B2

公开(公告)日：2004-09-07

申请号：US09682593

申请日：2001-09-25

Applicant: Yu-Chong Tai ,  Tze-Jung Yao ,  Xing Yang

Inventor： Yu-Chong Tai ,  Tze-Jung Yao ,  Xing Yang

IPC: H02N100

CPC classification number: B81B3/001 ,  B81C2201/112

Abstract: An anti stiction structure for cantilever formation technique. In one embodiment, the polymer cantilever is prevented from sticking to the substrate by at amortized stick layer on the substrate during formation that is later removed as a sacrificial layer. In another embodiment, the cantilever includes downwardly extending legs.

Abstract translation: 一种用于悬臂形成技术的反沉降结构。 在一个实施方案中，防止聚合物悬臂在形成期间在基板上的分段粘贴层处粘附到基板上，随后作为牺牲层去除。 在另一个实施例中，悬臂包括向下延伸的腿。

公开(公告)号：US20040037956A1

公开(公告)日：2004-02-26

申请号：US10225846

申请日：2002-08-22

Applicant: Eastman Kodak Company

Inventor： Zhihao Yang

IPC: C23C016/00

CPC classification number: B81C1/0096 ,  B05D1/60 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C09D4/00 ,  C08G77/24 ,  C08G77/04

Abstract: A method for coating a micro-electromechanical systems device with a silane coupling agent by a) mixing the silane coupling agent with a low volatile matrix material in a coating source material container; b) placing the micro-electromechanical systems device in a vacuum deposition chamber which in connection with the coating source material container; c) pumping the vacuum deposition chamber to a predetermined pressure; and maintaining the pressure of the vacuum deposition chamber for a period of time in order to chemically vapor deposit the silane coupling agent on the surface of the micro-electromechanical systems device

Abstract translation: 一种通过以下步骤涂覆具有硅烷偶联剂的微机电系统装置的方法：a）将硅烷偶联剂与低挥发性基质材料混合在涂料源材料容器中; b）将微机电系统装置放置在与涂料源材料容器相连的真空沉积室中; c）将真空沉积室泵送至预定压力; 并且将真空沉积室的压力维持一段时间，以便在微机电系统装置的表面上化学气相沉积硅烷偶联剂

公开(公告)号：US20040033639A1

公开(公告)日：2004-02-19

申请号：US10435757

申请日：2003-05-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung ,  Claes H. Bjorkman

IPC: H01L021/00

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.

Abstract translation: 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法，其可以被调整为在单室处理系统或多室处理系统中进行。

公开(公告)号：US20030211650A1

公开(公告)日：2003-11-13

申请号：US10457500

申请日：2003-06-09

Applicant: Analog Devices, Inc.

Inventor： John R. Martin

IPC: H01L021/00

CPC classification number: H01L21/3122 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02263 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.

Abstract translation: 本发明公开了一种在微加工结构上形成持久的抗静电表面的方法，同时它们仍然是晶片形式（即，在它们被分离成用于组装成包装的分立装置之前）。 该方法涉及材料的气相沉积以产生低粘度表面。 它还公开了有效赋予芯片抗静电性能的化学品。 这些包括聚苯基硅氧烷，硅烷醇封端的苯基硅氧烷和类似的材料。

公开(公告)号：US20030166342A1

公开(公告)日：2003-09-04

申请号：US10300970

申请日：2002-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung

IPC: H01L021/461 ,  H01L021/31 ,  H01L021/302 ,  H01L021/469

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.

Abstract translation: 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体来预处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法。

公开(公告)号：US20030047533A1

公开(公告)日：2003-03-13

申请号：US10167272

申请日：2002-06-10

Applicant: REFLECTIVITY, INC., a California corporation

Inventor： Jason S. Reid ,  Nungavaram S. Viswanathan

IPC: C23F001/00 ,  C23C016/00

CPC classification number: B81C1/00476 ,  B81B2201/045 ,  B81C2201/0108 ,  B81C2201/112 ,  B81C2201/117 ,  B82Y30/00

Abstract: A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

Abstract translation: 一种方法包括在衬底上沉积有机材料; 在沉积有机材料之后沉积与有机材料不同的附加材料; 并用压缩流体除去有机材料。 还公开了一种方法，包括：在衬底上提供有机层; 在提供有机层之后，提供与有机层的有机材料不同的一层或多层材料; 用压缩流体去除有机层; 并且在去除有机层之后向剩余的材料提供具有压缩流体的抗静电剂。

公开(公告)号：US06514786B1

公开(公告)日：2003-02-04

申请号：US09677879

申请日：2000-10-03

Applicant: Yasuo Yamaguchi ,  Teruya Fukaura ,  Kunihiro Nakamura

Inventor： Yasuo Yamaguchi ,  Teruya Fukaura ,  Kunihiro Nakamura

IPC: H01L2100

CPC classification number: G01P15/125 ,  B81B3/0008 ,  B81B2201/0235 ,  B81C1/0092 ,  B81C2201/112 ,  G01P15/0802

Abstract: Provided is a method of manufacturing an acceleration sensor capable of preventing bonding of a movable electrode and a fixed electrode. A stain film 8 for reducing bonding adsorption force is formed on side surfaces of a movable electrode 1, fixed electrodes 2a and 2b and a frame portion 7. In the case in which the movable electrode 1 and the fixed electrodes 2a and 2b are to be formed of a silicon substrate, it is preferable that an insulating film having irregular bonding of silicon atoms and oxygen atoms and irregular bonding of silicon atoms and nitrogen atoms should be employed for the stain film 8, for example. The formation of the stain film 8 can suppress the bonding between the movable electrode 1 and the fixed electrodes 2a and 2b even if Coulomb force is generated between both electrodes when the silicon substrate and a back side substrate 4 are joined by using an anode junction method.

公开(公告)号：US20020164879A1

公开(公告)日：2002-11-07

申请号：US09850923

申请日：2001-05-07

Applicant: Applied Materials, Inc.

Inventor： Toi Yue Becky Leung ,  Jeffrey D. Chinn

IPC: H01L021/302 ,  H01L021/461 ,  H01L021/31 ,  H01L021/469

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: The invention includes methods of forming microstructure devices. In an exemplary method, a substrate is provided which includes a first material and a second material. At least one of the first and second materials is exposed to vapor-phase alkylsilane-containing molecules to form a coating over the at least one of the first and second materials.

Abstract translation: 本发明包括形成微结构器件的方法。 在示例性方法中，提供了包括第一材料和第二材料的基底。 将第一和第二材料中的至少一种暴露于含气相烷基硅烷的分子，以在第一和第二材料中的至少一种材料上形成涂层。