公开(公告)号：US07539340B2

公开(公告)日：2009-05-26

申请号：US10830456

申请日：2004-04-23

Applicant: Nobuo Kochi ,  Yasuko Tsuruga

Inventor： Nobuo Kochi ,  Yasuko Tsuruga

IPC: G06K9/00

CPC classification number: H01J37/28 ,  G01B15/04 ,  G06K9/209 ,  G06K2209/19 ,  G06T7/593 ,  H01J37/265 ,  H01J2237/2611

Abstract: A three-dimensional coordinate measuring apparatus has a first and second incident angle adjusting sections for adjusting the attitude of the object in the directions of first and second neutral axes, respectively, to adjust the incident angle of the beam projected on the object from an imaging optical system relative to the object so that first and second stereoscopic images of the object can be formed, a matching process section for searching for corresponding points corresponding to measurement points in first and second search directions generally perpendicular to the first and second neutral axes, respectively, in the first and second stereoscopic images, and a shape measuring section for obtaining three-dimensional coordinate data of the object based on the relation between the measurement points and the corresponding points in the first and second stereoscopic images.

Abstract translation: 三维坐标测量装置具有第一和第二入射角调节部分，用于分别调节物体在第一和第二中立轴线方向上的姿态，以调整投射在物体上的光束的入射角度与成像 光学系统相对于物体，从而可以形成物体的第一和第二立体图像;匹配处理部分，用于分别搜索与第一和第二中立轴线大致垂直的第一和第二搜索方向上的测量点对应的点 以及形状测量部分，用于基于第一和第二立体图像中的测量点和对应点之间的关系来获得对象的三维坐标数据。

公开(公告)号：US20090121160A1

公开(公告)日：2009-05-14

申请号：US12253042

申请日：2008-10-16

Applicant: Dieter Winkler ,  Udo Weigel ,  Stefan Grimm

Inventor： Dieter Winkler ,  Udo Weigel ,  Stefan Grimm

IPC: G01J1/00

CPC classification number: H01J37/073 ,  H01J27/26 ,  H01J37/08 ,  H01J37/265 ,  H01J37/304 ,  H01J2237/06341 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/30466 ,  H01J2237/30477 ,  H01J2237/31749

Abstract: A charged particle beam device is described. The device includes an emitter unit including an emitter tip; a voltage supply unit adapted for providing a stable voltage to generate a stable extraction field at the emitter tip; a pulsed voltage supply member adapted for providing a pulsed voltage to generate a pulsed extraction field on top of the stable extraction field; a measuring unit for measuring an emitter characteristic; and a control unit adapted for receiving a signal from the measuring unit and for control of the pulsed voltage supply member.

Abstract translation: 描述带电粒子束装置。 该装置包括发射器单元，其包括发射极尖端; 电压供应单元，适于提供稳定的电压以在发射极尖端处产生稳定的提取场; 脉冲电压供应构件，其适于提供脉冲电压以在所述稳定提取场的顶部产生脉冲提取场; 用于测量发射极特性的测量单元; 以及控制单元，适于接收来自测量单元的信号并用于控制脉冲电压供应构件。

公开(公告)号：US07525090B1

公开(公告)日：2009-04-28

申请号：US11725022

申请日：2007-03-16

Applicant: Kenneth J. Krzeczowski

Inventor： Kenneth J. Krzeczowski

IPC: G01N23/00

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/244 ,  H01J37/263 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/2446 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2803

Abstract: One embodiment relates to a method of behind-the-lens dark-field imaging using a scanning electron microscope apparatus. An incident beam is focused onto a specimen surface using an immersion objective lens, and the incident beam is deflected so as to scan the incident electron beam over a field of view of the specimen surface. A secondary electron beam is detected using a segmented detector to obtain a set of pixel data for each segment of the detector. Scan-dependent movement of the secondary electron beam over the segmented detector is compensated for by processing using a dynamic centering algorithm to generate a set of virtual pixel data for each segment of a virtual detector. At least one set of the virtual pixel data is used to generate a dark field image. Other embodiments, aspects, and features are also disclosed.

Abstract translation: 一个实施例涉及使用扫描电子显微镜装置的镜头后暗区成像的方法。 使用浸没物镜将入射光束聚焦在样本表面上，并且入射光束被偏转，以便在被检体表面的视野上扫描入射的电子束。 使用分段检测器检测二次电子束，以获得检测器的每个段的一组像素数据。 通过使用动态中心算法的处理来补偿二次电子束在分段检测器上的扫描依赖运动，以生成虚拟检测器的每个段的一组虚拟像素数据。 使用至少一组虚拟像素数据来生成暗场图像。 还公开了其它实施例，方面和特征。

公开(公告)号：US20090020699A1

公开(公告)日：2009-01-22

申请号：US12208389

申请日：2008-09-11

Applicant: Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

Inventor： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

IPC: G01N23/225

CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract translation: 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

公开(公告)号：US20080296489A1

公开(公告)日：2008-12-04

申请号：US11997145

申请日：2006-07-28

Applicant: Jesse D. Olson ,  Daniel R. Lenz ,  Timothy R. Payne

Inventor： Jesse D. Olson ,  Daniel R. Lenz ,  Timothy R. Payne

IPC: H01J49/00

CPC classification number: H01J37/285 ,  H01J37/265 ,  H01J2237/2852 ,  H01J2237/2855

Abstract: The present invention relates to atom probe evaporation processes. For example, certain aspects are directed toward methods for controlling an evaporation process in an atom probe that includes initiating the atom probe evaporation process and monitoring a parameter associated with material being evaporated from a specimen. The method can further include controlling at least one characteristic of the atom probe evaporation process to attain a desired evaporation rate or characteristic. In selected embodiments, monitoring a parameter associated with material being evaporated can include monitoring an evaporation rate, mass-to-charge ratios of evaporated ions, a mass resolution, a composition of material being evaporated, and/or the like. In certain embodiments, controlling at least one characteristic can include controlling a pulse energy, a pulse frequency, a bias energy, and/or the like. In other embodiments, various portions of the above process can be computer implemented.

Abstract translation: 本发明涉及原子探针蒸发方法。 例如，某些方面涉及用于控制原子探针中的蒸发过程的方法，其包括引发原子探针蒸发过程并监测与样品蒸发的材料相关的参数。 该方法还可以包括控制原子探针蒸发过程的至少一个特性以获得所需的蒸发速率或特性。 在所选择的实施例中，监测与被蒸发的材料相关联的参数可以包括监测蒸发速率，蒸发离子的质荷比，质量分辨率，被蒸发的材料的组成和/或类似物。 在某些实施例中，控制至少一个特性可包括控制脉冲能量，脉冲频率，偏置能量等。 在其他实施例中，可以计算机实现上述过程的各个部分。

公开(公告)号：US07459680B2

公开(公告)日：2008-12-02

申请号：US11393367

申请日：2006-03-30

Applicant: Toshikatsu Kaneyama

Inventor： Toshikatsu Kaneyama

IPC: H01J40/00 ,  H01J47/00

CPC classification number: H01J37/05 ,  H01J37/265 ,  H01J40/02 ,  H01J2237/057 ,  H01J2237/221 ,  H01J2237/2446 ,  H01J2237/24585

Abstract: A method of analysis using an energy loss spectrometer and a transmission electron microscope equipped with the energy loss spectrometer. The spectrometer has a CCD camera for recording plural spectra as one photoelectric device image and a controller for batch reading in images from the camera, converting the positions of the pixels forming the images, and splitting each image into plural spectra. This permits improvement of the processing speed of the spectrometer.

Abstract translation: 使用能量损失光谱仪和配备有能量损失光谱仪的透射电子显微镜进行分析的方法。 光谱仪具有用于将多个光谱作为一个光电装置图像记录的CCD照相机，以及用于从照相机批量读取图像的控制器，转换形成图像的像素的位置，并将每个图像分割成多个光谱。 这样可以提高光谱仪的处理速度。

公开(公告)号：US20080290274A1

公开(公告)日：2008-11-27

申请号：US12033470

申请日：2008-02-19

Applicant: Toshifumi Honda

Inventor： Toshifumi Honda

IPC: G01N23/04

CPC classification number: H01J37/28 ,  G01N2223/6116 ,  G06T7/0006 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/265 ,  H01J2237/2817

Abstract: A defect review method and device of the invention solves the previous problem of a long inspection time that is caused by the increase of a process-margin-narrow pattern as a result of the size reduction of a semiconductor device. With the method and device of the invention, an SEM (Scanning Electron Microscope) image is derived by capturing an image of a process-margin-narrow pattern portion extracted based on lithography simulation with image-capturing conditions of a relatively low resolution. The resulting SEM image is compared with CAD (Computer Aided Design) data for extraction of any abnormal section. An image of the area extracted as being abnormal is captured again, and the resulting high-resolution SEM image is compared again with the CAD data for defect classification based on the feature amount of the image, e.g., shape deformation. The abnormal section is then measured in dimension at a position preset for the classification result so that the time taken for inspection can be prevented from increasing.

Abstract translation: 本发明的缺陷评价方法和装置解决了由于半导体器件的尺寸减小导致的工艺边缘窄度图案的增加而导致的长检查时间的先前问题。 利用本发明的方法和装置，通过捕获基于光刻模拟提取的处理边缘窄图案部分的图像，以相对低分辨率的图像捕获条件来导出SEM（扫描电子显微镜）图像。 将所得SEM图像与CAD（计算机辅助设计）数据进行比较，以提取任何异常部分。 再次捕获提取为异常的区域的图像，并且基于图像的特征量（例如形状变形）将所得到的高分辨率SEM图像再次与用于缺陷分类的CAD数据进行比较。 然后在为分类结果预设的位置处的尺寸上测量异常部分，使得可以防止检查所花费的时间增加。

公开(公告)号：US07435959B2

公开(公告)日：2008-10-14

申请号：US11798395

申请日：2007-05-14

Applicant: Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

Inventor： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

IPC: G01N23/225

CPC classification number: G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract translation: 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

公开(公告)号：US07435957B2

公开(公告)日：2008-10-14

申请号：US11302323

申请日：2005-12-14

Applicant: Hiromi Inada ,  Mitsugu Sato ,  Atsushi Takane

Inventor： Hiromi Inada ,  Mitsugu Sato ,  Atsushi Takane

IPC: G01N23/00

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/265 ,  H01J2237/223 ,  H01J2237/2826 ,  H01J2237/3045

Abstract: On the basis of a displacement of the field of view before and after a deflection of a charged particle beam, extracted from a first specimen image, including a displacement of the field of view recorded by causing a charged particle beam to deflect by a predetermined amount by a beam deflector in an image in which a specimen image is captured at a first magnification calibrated by using a specimen enlarged image of a specimen as a magnification standard, and also a displacement of the field of view before and after a deflection of the charged particle beam, extracted from a second specimen image, including a displacement of the field of view recorded by causing a charged particle beam to deflect by the predetermined amount by the beam deflector in an image in which a specimen image is captured at a second magnification, the second magnification is calibrated.

Abstract translation: 基于从包括通过使带电粒子束偏转预定量而记录的视野的位移的第一标本图像提取的带电粒子束的偏转之前和之后的视场位移的基础上， 通过在通过使用样本的样本放大图像作为放大标准校准的第一倍率捕获样本图像的图像中的光束偏转器，以及在充电的偏转之前和之后的视场位移 从第二标本图像中提取出的粒子束，包括通过使带电粒子束在第二放大倍数下拍摄样本图像的图像中的光束偏转器偏转预定量而记录的视野的位移， 校准第二放大倍数。

公开(公告)号：US20080245965A1

公开(公告)日：2008-10-09

申请号：US12098127

申请日：2008-04-04

Applicant: Akiyuki Sugiyama ,  Hidetoshi Morokuma ,  Yutaka Hojo ,  Yukio Yoshizawa

Inventor： Akiyuki Sugiyama ,  Hidetoshi Morokuma ,  Yutaka Hojo ,  Yukio Yoshizawa

IPC: G01N23/00

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/265 ,  H01J37/28 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/22 ,  H01J2237/2817 ,  H01J2237/31745

Abstract: To provide a charged particle system capable of facilitating comparison between an actual pattern and an ideal pattern using not only two-dimensional CAD data but also three-dimensional CAD data. According to the present invention, using information about the angle of irradiation of a sample with a charged particle beam, a two-dimensional display of an ideal pattern (design data, such as CAD data, for example) is converted into a three-dimensional display, and the three-dimensional ideal pattern is displayed with an observation image. If the three-dimensional ideal pattern is superimposed on the observation image, comparison thereof can be easily carried out. Examples of the ideal pattern include a circuit pattern (CAD data) based on semiconductor design information, an exposure mask pattern based on an exposure mask used for exposure of a semiconductor wafer, and an exposure simulation pattern based on exposure simulation based on the exposure mask and an exposure condition can be used, and at least one of these patterns is displayed three-dimensionally.

Abstract translation: 为了提供一种带电粒子系统，其能够利用不仅二维CAD数据而且还可以利用三维CAD数据来实现实际图案与理想图案之间的比较。 根据本发明，使用带有带电粒子束的样本的照射角度的信息，将理想图案（例如，CAD数据等设计数据）的二维显示转换成三维 显示，并且用观察图像显示三维理想图案。 如果将三维理想图案叠加在观察图像上，则可以容易地进行比较。 理想图案的实例包括基于半导体设计信息的电路图案（CAD数据），基于用于半导体晶片曝光的曝光掩模的曝光掩模图案和基于曝光掩模的曝光模拟的曝光模拟图案 并且可以使用曝光条件，并且这些图案中的至少一个被三维地显示。