公开(公告)号：US20230369040A1

公开(公告)日：2023-11-16

申请号：US18225366

申请日：2023-07-24

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/36 ,  H01L21/768

CPC classification number: H01L21/02126 ,  C23C16/45553 ,  C23C16/36 ,  H01L21/02274 ,  H01L21/76829 ,  H01L21/0228

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US20230357925A1

公开(公告)日：2023-11-09

申请号：US18222024

申请日：2023-07-14

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44

CPC classification number: C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/4412 ,  C23C16/45565

Abstract: Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US20230352300A1

公开(公告)日：2023-11-02

申请号：US18304067

申请日：2023-04-20

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers

IPC: C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/02 ,  C30B33/12

CPC classification number: H01L21/02507 ,  C30B25/165 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  C30B33/12 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01J37/321

Abstract: Methods and systems for forming structures including a superlattice of silicon-containing epitaxial layers using nanoparticles. Exemplary methods can include forming nanoparticles in situ and depositing the nanoparticles onto a substrate surface to thereby form the epitaxial layers.

公开(公告)号：US20230349043A1

公开(公告)日：2023-11-02

申请号：US18207806

申请日：2023-06-09

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida ,  René Vervuurt

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458

CPC classification number: C23C16/45553 ,  C23C16/45502 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/458 ,  C23C16/52 ,  C23C16/308

Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.

公开(公告)号：US11804388B2

公开(公告)日：2023-10-31

申请号：US17324265

申请日：2021-05-19

Applicant: ASM IP Holding B.V.

Inventor： Theodorus Oosterlaken

IPC: F27D5/00 ,  H01L21/67 ,  H01L21/673 ,  F27D3/00 ,  F27B17/00

CPC classification number: H01L21/67109 ,  F27D3/0084 ,  F27D5/0037 ,  F27D5/0062 ,  H01L21/67303 ,  F27B17/0025

Abstract: A substrate processing apparatus, comprising a substrate support (32) provided with a support surface (34) for supporting a substrate or a substrate carrier (24) thereon and a support heater (50) constructed and arranged to heat the support surface (34). The apparatus comprises a heat shield constructed and arranged to cover and shield the substrate support (32) when no substrate or substrate carrier (24) is on the support surface.

公开(公告)号：US11791153B2

公开(公告)日：2023-10-17

申请号：US17170742

申请日：2021-02-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Sol Kim ,  Ying-Shen Kuo ,  Michael Schmotzer ,  Eric James Shero ,  Paul Ma

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02181 ,  H01L21/0228 ,  H01L21/02244 ,  H01L21/76837

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

公开(公告)号：US20230323558A1

公开(公告)日：2023-10-12

申请号：US18123508

申请日：2023-03-20

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  ByeongPil Park ,  Shinya Ueda

IPC: C25D11/18 ,  C23C16/46 ,  H01J37/32

CPC classification number: C25D11/18 ,  C23C16/463 ,  H01J37/32724

Abstract: A method of manufacturing a cooling device of a substrate processing apparatus includes: providing an aluminum plate having a through hole; forming a temperature control portion by anodizing the aluminum plate; and arranging the temperature control portion below a substrate support portion, wherein the temperature control portion is arranged so that a support rod of the substrate support portion passes through the through hole.

公开(公告)号：US20230307269A1

公开(公告)日：2023-09-28

申请号：US18186653

申请日：2023-03-20

Applicant: ASM IP Holding B.V.

Inventor： Adriaan Garssen

IPC: H01L21/67

CPC classification number: H01L21/67155

Abstract: A semiconductor processing system and a method for assembling such a system in a room of a semiconductor fabrication plant. The system comprises an equipment module and a pedestal. The equipment module may be movable over the pedestal to bring the equipment module in an end position and may have a plurality of stop surfaces. The method comprises placing the pedestal in the room, placing two stops on the pedestal and positioning the two stops relative to reference elements in the room, and connecting the positioned stops to the pedestal so that the positions thereof in the X-direction and Y-direction are fixed. The equipment module may be moved over the pedestal until the stop surfaces of the equipment module abut against the stops so as to position the equipment module in the X-direction and Y-direction relative to the reference elements.

公开(公告)号：US20230307255A1

公开(公告)日：2023-09-28

申请号：US18187468

申请日：2023-03-21

Applicant: ASM IP Holding, B.V.

Inventor： Gregory Deye ,  Caleb Miskin ,  Fan Gao ,  Peipei Gao

IPC: H01L21/67 ,  C23C16/44 ,  B08B9/032

CPC classification number: H01L21/67017 ,  B08B9/0325 ,  B08B9/0328 ,  C23C16/4405 ,  C23C16/4412 ,  B08B2209/032

Abstract: A semiconductor processing system includes a chamber arrangement, an exhaust arrangement connected to the chamber arrangement, an accretion sensor supported within the exhaust arrangement, and a processor. The processor is disposed in communication with the accretion sensor and is responsive to instructions recorded on a non-transitory machine-readable medium to receive an accretion signal from the accretion sensor, the accretion signal indicative of an accretion amount disposed within the exhaust arrangement, receive a predetermined accretion amount value, and compare the accretion amount to the predetermined accretion amount value. The instructions further cause the processor to execute an accretion countermeasure when the received accretion amount is greater than the predetermined accretion amount value. Methods of controlling accretion within exhaust arrangements for semiconductor processing systems and foreline assemblies for semiconductor processing systems are also described.

公开(公告)号：US20230307247A1

公开(公告)日：2023-09-28

申请号：US18319330

申请日：2023-05-17

Applicant: ASM IP HOLDING B.V.

Inventor： Mikko Ritala ,  Chao Zhang ,  Markku Leskelä

IPC: H01L21/311 ,  H01L21/306 ,  H01L21/02 ,  H01L21/285 ,  H01L21/033 ,  H01L21/3105

CPC classification number: H01L21/31138 ,  H01L21/30604 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/0337 ,  H01L21/31051 ,  H01L21/31127

Abstract: Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.