公开(公告)号：US09249008B2

公开(公告)日：2016-02-02

申请号：US14094568

申请日：2013-12-02

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yu Wen Hsu ,  Chin Fu Kuo ,  Chao Ta Huang ,  Chun Kai Mao ,  Chin Hung Wang

IPC: A61B19/00 ,  B81B3/00 ,  G01L9/00 ,  G01P15/08 ,  G01P15/125

CPC classification number: B81B3/0086 ,  A61B2562/028 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  G01L9/0073 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0837

Abstract: A MEMS device with a first electrode, a second electrode and a third electrode is disclosed. These electrodes are disposed on a substrate in such a manner that (1) a pointing direction of the first electrode is in parallel with a normal direction of the substrate, (2) a pointing direction of the third electrode is perpendicular to the pointing direction of the first electrode, (3) the second electrode includes a sensing portion and a stationary portion, (4) the first electrode and the sensing portion are configured to define a sensing capacitor, and (5) the third electrode and the stationary portion are configured to define a reference capacitor. This arrangement facilitates the MEMS device such as a differential pressure sensor, differential barometer, differential microphone and decoupling capacitor to be miniaturized.

Abstract translation: 公开了具有第一电极，第二电极和第三电极的MEMS器件。 这些电极以这样的方式设置在基板上：（1）第一电极的指向方向与基板的法线方向平行，（2）第三电极的指向方向垂直于 第一电极，（3）第二电极包括感测部分和静止部分，（4）第一电极和感测部分被配置为限定感测电容器，以及（5）第三电极和固定部分被配置 以定义参考电容器。 这种布置方便MEMS器件如差压传感器，差分气压计，差分麦克风和去耦电容器小型化。

公开(公告)号：US20160025664A1

公开(公告)日：2016-01-28

申请号：US14532723

申请日：2014-11-04

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Louis Nervegna ,  Jeremy R. Hui

IPC: G01N27/22 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00246 ,  B81B3/0021 ,  B81B7/007 ,  B81B7/0077 ,  B81B7/008 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00333 ,  B81C1/0038 ,  B81C2201/0105 ,  B81C2201/056 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/0172 ,  B81C2203/019 ,  B81C2203/0735 ,  G01N27/223 ,  G01N27/227

Abstract: Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.

Abstract translation: 捕获的牺牲结构和薄膜封装方法可用于制造捕获的牺牲结构，例如相对湿度传感器结构，以及保护在半导体管芯基板之上延伸的相邻半导体结构不被模具或其它半导体加工件接触的间隔结构 工具在与衬垫结构相邻的管芯衬底的区域中。

公开(公告)号：US20160023888A1

公开(公告)日：2016-01-28

申请号：US14532658

申请日：2014-11-04

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Jeremy R. Hui ,  Carrie Wing-Zin Low ,  Mehrnaz Motiee

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00246 ,  B81B3/0021 ,  B81B7/007 ,  B81B7/0077 ,  B81B7/008 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00333 ,  B81C1/0038 ,  B81C2201/0105 ,  B81C2201/056 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/0172 ,  B81C2203/019 ,  B81C2203/0735 ,  G01N27/223 ,  G01N27/227

Abstract: Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.

Abstract translation: 可以在一个示例中实现的方法和结构，以共同整合用于薄膜封装和形成微电子器件和微机电系统（MEMS）例如传感器和致动器的过程。 例如，可以使用相同的基本工艺流程来制造具有不同特性的结构，通过选择与基本工艺流程一起使用的不同工艺选项或模块以便创建所需的结构。 可以通过各种公开的处理流程序列有利地实现各种处理流程序列以及各种设备设计结构。

公开(公告)号：US09233834B2

公开(公告)日：2016-01-12

申请号：US14316504

申请日：2014-06-26

Applicant: STMicroelectronics S.r.I.

Inventor： Dino Faralli ,  Paolo Ferrari ,  Laura Maria Castoldi

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  B81C3/00

CPC classification number: B81B3/0021 ,  B81B7/0016 ,  B81B7/0058 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/115 ,  B81C1/00158 ,  B81C3/00 ,  B81C2203/0118 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A MEMS device wherein a die of semiconductor material has a first face and a second face. A diaphragm is formed in or on the die and faces the first surface. A cap is fixed to the first face of the die and has a hole forming a fluidic path connecting the diaphragm with the outside world. A closing region, for example a support, a second cap, or another die, is fixed to the second face of the die. The closing region forms, together with the die and the cap, a stop structure configured to limit movements of the suspended region in a direction perpendicular to the first face.

Abstract translation: 一种MEMS器件，其中半导体材料的管芯具有第一面和第二面。 在模具中或模具上形成隔膜，并且面对第一表面。 帽固定在模具的第一面上，并且具有形成连接隔膜与外界的流体路径的孔。 关闭区域，例如支撑件，第二盖子或另一个模具，被固定到模具的第二面。 闭合区域与模具和盖一起形成止挡结构，其被构造成限制悬挂区域在垂直于第一面的方向上的移动。

公开(公告)号：US09227842B2

公开(公告)日：2016-01-05

申请号：US14084569

申请日：2013-11-19

Applicant: Invensense, Inc.

Inventor： Michael Julian Daneman ,  Mei-Lin Chan ,  Martin Lim ,  Fariboz Assaderaghi ,  Erhan Polatkan Ata

IPC: H01L21/00 ,  B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/112 ,  B81C2203/0118 ,  B81C2203/0742 ,  B81C2203/0792 ,  H01L2224/83805

Abstract: A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.

Abstract translation: 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上，第一牺牲层被部分去除留下第一剩余氧化物。 此外，该方法包括在硅衬底上沉积导电结构层，导电结构层与硅衬底的至少一部分进行物理接触。 此外，在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外，MEMS衬底被结合到CMOS晶片，其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。

公开(公告)号：US20150362395A1

公开(公告)日：2015-12-17

申请号：US14301618

申请日：2014-06-11

Applicant: ams International AG

Inventor： Martijn Goossens ,  Willem Frederik Adrianus Besling ,  Peter Gerard Steeneken ,  Casper van der Avoort ,  Remco Henricus Wilhelmus Pijnenburg

IPC: G01L27/00

CPC classification number: G01L27/005 ,  B81B2201/02 ,  B81B2201/0264 ,  B81B2207/11 ,  B81C99/0035 ,  G01L19/04 ,  G01L27/002

Abstract: One example discloses a MEMS device, including: a cavity having an internal environment; a seal isolating the internal environment from an external environment outside the MEMS device; wherein the seal is susceptible to damage in response to a calibration unsealing energy; wherein upon damage to the seal, a pathway forms which couples the internal environment to the external environment; and a calibration circuit capable of measuring the internal environment before and after damage to the seal.

Abstract translation: 一个实例公开了一种MEMS器件，包括：具有内部环境的腔; 将内部环境与MEMS器件外部的外部环境隔离的密封件; 其中所述密封件响应于校准开封能量而易受损坏; 其中在损坏密封件时，形成将内部环境耦合到外部环境的通​​路; 以及能够测量密封件损坏前后的内部环境的校准电路。

公开(公告)号：US20150344301A1

公开(公告)日：2015-12-03

申请号：US14722417

申请日：2015-05-27

Applicant: Seiko Epson Corporation

Inventor： Takuya KINUGAWA

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B7/0064 ,  B81B2201/0264 ,  B81C2203/0136

Abstract: An electronic part includes a bottom portion of a cavity that has an oscillation device, a ceiling portion so disposed that it faces the bottom portion via the cavity and having holes, a shielding portion that is disposed in the cavity and between the bottom portion of the cavity and the ceiling portion and covers the holes in a plan view viewed in the direction in which the bottom portion of the cavity and the ceiling portion are arranged, and sealing portions that are connected to both the ceiling portion and the shielding portion via the holes and seal the holes.

Abstract translation: 电子部件包括具有振荡装置的空腔的底部，设置成通过空腔面向底部并具有孔的顶部，设置在空腔中并位于空腔的底部之间的屏蔽部分 空腔和天花板部分，并且在沿着空腔和顶部的底部的方向观察的俯视图中覆盖孔，以及通过孔穿过顶部和遮蔽部两者连接的密封部 并密封孔。

公开(公告)号：US09199836B2

公开(公告)日：2015-12-01

申请号：US14452756

申请日：2014-08-06

Applicant: Renesas Electronics Corporation

Inventor： Koichi Arai

IPC: H01L29/84 ,  G01L9/00 ,  B81B3/00 ,  G01P15/08 ,  B81C3/00 ,  B81C1/00 ,  G01L19/06

CPC classification number: B81B3/0072 ,  B81B3/00 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00896 ,  B81C3/00 ,  B81C2201/056 ,  G01L9/0042 ,  G01L19/06 ,  H01L29/84 ,  H01L2224/13 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

Abstract: In a method of manufacturing a semiconductor integrated circuit device having an MEMS element over a single semiconductor chip, the movable part of the MEMS element is fixed before the formation of a rewiring. After formation of the rewiring, the wafer is diced. Then, the movable part of the MEMS element is released by etching the wafer.

Abstract translation: 在制造在单个半导体芯片上具有MEMS元件的半导体集成电路器件的方法中，MEMS元件的可移动部件在形成重新布线之前被固定。 在重新布线形成之后，晶片被切割。 然后，通过蚀刻晶片来释放MEMS元件的可移动部分。

公开(公告)号：US09190339B2

公开(公告)日：2015-11-17

申请号：US14170653

申请日：2014-02-03

Applicant: Soon Kang Chan ,  Voon Kwai Leong ,  Wai Keong Wong

Inventor： Soon Kang Chan ,  Voon Kwai Leong ,  Wai Keong Wong

IPC: H01L21/00 ,  H01L23/31 ,  H01L21/56 ,  H01L23/04 ,  B81C1/00 ,  B81B7/00 ,  G01L9/00

CPC classification number: H01L23/3107 ,  B81B7/0038 ,  B81B2201/0264 ,  B81C1/00285 ,  B81C1/00333 ,  G01L9/0098 ,  G01L19/0092 ,  G01L19/147 ,  H01L21/54 ,  H01L21/56 ,  H01L23/04 ,  H01L23/24 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for applying a pressure-sensitive gel material during assembly of an array of pre-singulated packaged semiconductor devices. In the method, pressure-sensitive gel material is dispensed onto a first semiconductor device of the array, where the first semiconductor device is disposed within a first cavity. A first curing process is performed to partially cure the pressure-sensitive gel material in the first cavity. Pressure-sensitive gel material is then dispensed onto another semiconductor device of the array, where the other semiconductor device is disposed within another cavity. The first curing process is initiated before the dispensing of the pressure-sensitive gel material inside of the other cavity is completed and initially cures pressure-sensitive gel material for fewer than all of the pre-singulated packaged semiconductor devices of the array.

Abstract translation: 一种在组装预分解封装半导体器件的阵列期间施加压敏凝胶材料的方法。 在该方法中，将压敏凝胶材料分配到阵列的第一半导体器件上，其中第一半导体器件设置在第一腔内。 执行第一固化过程以部分固化第一腔中的压敏凝胶材料。 然后将压敏凝胶材料分配到阵列的另一半导体器件上，其中另一个半导体器件设置在另一个空腔内。 首先固化过程是在完成另一个空腔内的压敏凝胶材料的分配完成之前开始的，并且最初固化压敏凝胶材料用于少于阵列的所有预分解封装的半导体器件。

公开(公告)号：US09187317B2

公开(公告)日：2015-11-17

申请号：US13944382

申请日：2013-07-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

IPC: B81C1/00

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00309 ,  B81C2203/0118

Abstract: A method embodiment for forming a micro-electromechanical (MEMS) device includes providing a MEMS wafer, wherein a portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer, and the carrier wafer is etched to expose the first membrane for the microphone device to an ambient environment. A MEMS substrate is patterned and portions of a first sacrificial layer are removed of the MEMS wafer to form a MEMS structure. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure. A second sealed cavity and a cavity exposed to an ambient environment on opposing sides of the second membrane for the pressure sensor device are formed.

Abstract translation: 用于形成微机电（MEMS）装置的方法实施例包括提供MEMS晶片，其中MEMS晶片的一部分被图案化以提供用于麦克风装置的第一膜和用于压力传感器装置的第二膜。 载体晶片结合到MEMS晶片，并且载体晶片被蚀刻以将用于麦克风器件的第一膜暴露于周围环境。 图案化MEMS基板，并且去除MEMS晶片的第一牺牲层的部分以形成MEMS结构。 盖晶片结合到与晶片相对的MEMS晶片的一侧，以形成包括MEMS结构的第一密封腔。 形成用于压力传感器装置的第二密封空腔和暴露于第二隔膜相对侧周围环境的空腔。