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    Field emitter cell and array with vertical thin-film-edge emitter
    131.
    发明授权
    Field emitter cell and array with vertical thin-film-edge emitter 失效

    公开(公告)号：US6084245A

    公开(公告)日：2000-07-04

    申请号：US45853

    申请日：1998-03-23

    Applicant: David S. Y. Hsu ,  Henry F. Gray

    Inventor： David S. Y. Hsu ,  Henry F. Gray

    IPC: H01J3/02 ,  H01L29/06

    CPC classification number: H01J3/022 ,  H01J2201/30423 ,  H01J2201/30446

    Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

    Cold cathode electron emitter and display structure
    133.
    发明授权
    Cold cathode electron emitter and display structure 失效
    冷阴极电子发射体和显示结构

    公开(公告)号：US5908699A

    公开(公告)日：1999-06-01

    申请号：US857295

    申请日：1997-05-16

    Applicant: Seong I. Kim

    Inventor： Seong I. Kim

    IPC: G09G3/22 ,  H01J1/304 ,  H01L29/06

    CPC classification number: H01J3/021 ,  H01J1/304 ,  G09G3/22 ,  H01J2201/30446 ,  Y10T428/30

    Abstract: A cold cathode electron emission structure includes an amorphous carbon matrix having cesium dispersed therein, with the cesium present in substantially non-crystalline form. A cesium-carbon-oxide layer is positioned on the amorphous carbon matrix, constitutes an electron emission surface and causes the cold cathode electron emission structure to exhibit a lowered surface work function. A display structure including the aforedescribed cold cathode electron emission structure further includes a target electrode including a phosphor and exhibiting a target potential for attraction of electrons. A gate electrode is positioned between the electron emission structure and the target electrode and is biased at a gate potential which attracts electrons, but which is insufficient, in combination with the target potential, to cause emission of a beam of electrons from the electron emission structure. A control electrode is coupled to the electron emission structure and selectively applies a low-voltage control potential which, in combination with the gate potential and the target voltage, is sufficient to cause the electron emission structure to emit a beam of electrons towards the target electrode. The cesium-carbon-oxide layer in combination with the control electrode further enables the achievement of a long focal length, field effect display structure.

    Abstract translation: 冷阴极电子发射结构包括其中分散有铯的无定形碳基质，其中铯基本上是非结晶形式。 铯 - 碳氧化物层位于无定形碳基体上，构成电子发射表面，并使冷阴极电子发射结构呈现降低的表面功函数。 包括上述冷阴极电子发射结构的显示结构还包括包括磷光体并具有吸引电子的目标电位的目标电极。 栅电极位于电子发射结构和目标电极之间，并且被偏置在吸引电子但不足以与目标电位相结合的栅极电位，从而从电子发射结构发射电子束 。 控制电极耦合到电子发射结构，并且选择性地施加低电压控制电位，其结合门电位和目标电压足以使电子发射结构向目标电极发射电子束 。 与控制电极组合的铯碳氧化物层还能够实现长焦距，场效应显示结构。

    Field emission electron source
    135.
    发明授权
    Field emission electron source 失效
    场发射电子源

    公开(公告)号：US08405294B2

    公开(公告)日：2013-03-26

    申请号：US12343396

    申请日：2008-12-23

    Applicant: Takahiro Matsumoto ,  Yoichiro Neo

    Inventor： Takahiro Matsumoto ,  Yoichiro Neo

    IPC: H01J1/00 ,  H01J19/06

    CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30446

    Abstract: A field emission electron source for emitting electrons under applied electric field includes a cold cathode having molecules of an aromatic compound vapor-deposited thereon at a pointed end of said cold cathode.

    Abstract translation: 用于在施加的电场下发射电子的场致发射电子源包括在所述冷阴极的尖端处具有气相沉积在其上的芳族化合物分子的冷阴极。

    Gate controlled field emission triode and process for fabricating the same
    136.
    发明授权
    Gate controlled field emission triode and process for fabricating the same 有权
    门控场发射三极管及其制造方法

    公开(公告)号：US08267734B2

    公开(公告)日：2012-09-18

    申请号：US12386161

    申请日：2009-04-14

    Applicant: Chia-Ying Lee ,  Seu-Yi Li ,  Pang Lin ,  Tseung-Yuan Tseng

    Inventor： Chia-Ying Lee ,  Seu-Yi Li ,  Pang Lin ,  Tseung-Yuan Tseng

    IPC: H01J9/00

    CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

    Abstract: This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.

    Abstract translation: 本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法，其与半导体制造工艺相关，并且获得了栅极控制的场致发射三极管。 该方法包括提供半导体衬底，分别在半导体衬底上沉积电介质层和导电层，限定电介质层和导电层上的发射极阵列的位置，将沉积超薄ZnO膜作为接种层 衬底，通过使用水热法生长ZnO纳米线作为发射极阵列，并蚀刻除发射极阵列之外的区域，然后获得栅极控制的场致发射三极管。

    Boron nitride thin-film emitter and production method thereof, and electron emitting method using boron nitride thin-film emitter
    139.
    发明授权
    Boron nitride thin-film emitter and production method thereof, and electron emitting method using boron nitride thin-film emitter 失效
    氮化硼薄膜发射体及其制造方法以及使用氮化硼薄膜发射体的电子发射方法

    公开(公告)号：US07947243B2

    公开(公告)日：2011-05-24

    申请号：US11665250

    申请日：2005-12-21

    Applicant: Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

    Inventor： Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

    IPC: C01B35/00 ,  C01B21/064 ,  C01B25/00 ,  C01D3/02 ,  H01J11/04 ,  C23C14/28 ,  C23C16/00 ,  B05D3/02 ,  B05D3/00 ,  H05H1/24 ,  B01J19/12 ,  H01L21/4763

    CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

    Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission.In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

    Abstract translation: 基于关于氮化硼薄膜的设计，每个氮化硼薄膜包括场致发射性能优异的急端形状的氮化硼晶体，以及采用这种薄膜的发射体的设计，旨在适当地控制这种晶体的分布状态 提供具有优异效率的发射极，因此仅需要较低的电子发射阈值电场。 在包含各自由通式BN表示的晶体的氮化硼薄膜发射体的设计中，每个都包含sp 3键合的氮化硼，sp2结合的氮化硼或其混合物，并且每个都显示出急剧的形状 场电子发射特性优异; 当从气相沉积发射体时，控制衬底相对于反应气体流的角度，从而控制晶体在薄膜表面上的分布状态。

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