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    Charles e
    134.
    发明授权
    Charles e 失效

    公开(公告)号：US571099A

    公开(公告)日：1896-11-10

    申请号：US571099D

    CPC classification number: H01J3/022

    EMITTER
    135.
    发明申请
    EMITTER 有权
    发电机

    公开(公告)号：US20160372295A1

    公开(公告)日：2016-12-22

    申请号：US15186717

    申请日：2016-06-20

    Applicant: SIEMENS HEALTHCARE GMBH

    Inventor： Christian RIEDL

    IPC: H01J1/16

    CPC classification number: H01J1/16 ,  H01J1/3042 ,  H01J3/022 ,  H01J21/105 ,  H01J35/06 ,  H01J2201/30407

    Abstract: An emitter has a basic unit with at least one emission surface. Accordingly, the basic unit has deep structuring in a region of the at least one emission surface. More specifically, the basic unit has the deep structuring on both a front side and on a rear side in the region of the emission surface for improving emission properties.

    Abstract translation: 发射器具有至少一个发射表面的基本单元。 因此，基本单元在至少一个发射表面的区域中具有深度结构。 更具体地，基本单元在发射表面的区域中具有在前侧和后侧上的深度结构，用于改善发射特性。

    ELECTRON-EMITTING COLD CATHODE DEVICE
    136.
    发明申请
    ELECTRON-EMITTING COLD CATHODE DEVICE 有权
    电子发射冷阴极设备

    公开(公告)号：US20150022076A1

    公开(公告)日：2015-01-22

    申请号：US14359534

    申请日：2012-11-26

    Applicant: SELEX ES S.P.A.

    Inventor： Giacomo Ulisse ,  Francesca Brunetti ,  Aldo Di Carlo ,  Ferdinando Ricci ,  Filippo Gemma ,  Anna Maria Fiorello ,  Massimiliano Dispenza ,  Roberta Buttiglione

    IPC: H01J19/24 ,  H01J3/02 ,  H01J19/32 ,  H01J19/46 ,  H01J21/10 ,  H01J19/38

    CPC classification number: H01J19/24 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J19/32 ,  H01J19/38 ,  H01J19/46 ,  H01J21/105 ,  H01J21/20

    Abstract: One or more embodiments of the invention concern a device comprising: a cathode that lies on a cathode plane and includes, in an active region one or more cathode straight-finger-shaped terminals with a main extension direction parallel to a first reference direction; for each cathode terminal, one or more electron emitters formed on, and in ohmic contact with, said cathode terminal; and a gate electrode that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode and includes, in the active region, two or more gate straight-finger-shaped terminals with a main extension direction parallel to the first reference direction; wherein the gate terminals are interlaced with said cathode terminal(s).

    Abstract translation: 本发明的一个或多个实施例涉及一种装置，其包括：阴极，其位于阴极平面上，并且在有源区域中包括一个或多个阴极直指形端子，其主延伸方向平行于第一参考方向; 对于每个阴极端子，形成在所述阴极端子上并与所述阴极端子欧姆接触的一个或多个电子发射器; 并且位于与所述阴极平面平行且间隔开的栅极平面上的栅极电极不与阴极重叠，并且在有源区域中包括两个或更多个具有主延伸方向的栅极直指形端子 平行于第一参考方向; 其中栅极端子与所述阴极端子交错。

    Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode
    137.
    发明授权
    Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode 有权
    制造完全集成和封装的微制造真空二极管的方法

    公开(公告)号：US08814622B1

    公开(公告)日：2014-08-26

    申请号：US13298448

    申请日：2011-11-17

    Applicant: Paul J. Resnick ,  Eric Langlois

    Inventor： Paul J. Resnick ,  Eric Langlois

    IPC: H01J9/04 ,  H01J3/02 ,  H01J9/02

    CPC classification number: H01J1/308 ,  H01J1/3044 ,  H01J1/36 ,  H01J3/022 ,  H01J9/025 ,  H01J9/14 ,  H01J19/24 ,  H01J19/32 ,  H01J19/46 ,  H01J19/54 ,  H01J21/20

    Abstract: Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

    Abstract translation: 公开了一种封装微型二极管及其制造方法。 该方法包括在衬底中形成多个柱，其中相应的尖端设置在柱的第一端，尖端限定二极管的阴极; 在基板上设置牺牲氧化物层，多个柱和各个尖端; 在柱周围的牺牲氧化物层中形成相应的沟槽; 在所述牺牲氧化物层中形成开口以暴露所述尖端的一部分; 在所述开口和所述衬底的表面上沉积导电材料以形成所述二极管的阳极; 并去除牺牲氧化物层。

    LOW VOLTAGE NANOSCALE VACUUM ELECTRONIC DEVICES
    138.
    发明申请
    LOW VOLTAGE NANOSCALE VACUUM ELECTRONIC DEVICES 有权
    低电压纳米真空电子设备

    公开(公告)号：US20130299773A1

    公开(公告)日：2013-11-14

    申请号：US13888493

    申请日：2013-05-07

    Applicant: UNIVERSITY OF PITTSBURGH - OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION

    Inventor： HONG KOO KIM ,  SIWAPON SRISONPHAN

    IPC: H01L29/76 ,  H01L29/66

    CPC classification number: H01J1/3046 ,  H01J1/3042 ,  H01J3/022 ,  H01J19/24 ,  H01J2201/30423 ,  H01L27/1446 ,  H01L27/146 ,  H01L29/66181 ,  H01L29/66439 ,  H01L29/7613 ,  H01L29/94 ,  H01L31/022466 ,  H01L31/06 ,  H01L31/062 ,  H01L31/08 ,  H01L31/101 ,  H01L31/113 ,  Y02E10/50

    Abstract: An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

    Abstract translation: 一种电子器件，包括设置在导电层之间的第一导电层，第二导电层和绝缘层。 至少一个侧壁从第一导电层延伸到第二导电层，并且包括第一导电层，第二导电层和绝缘层的至少一部分。 在第一和第二导电层之间施加偏置电压，其中响应于偏置电压，至少在第一导电层和第二导电层中的至少一个中引入二维电子系统，并且其中来自二维电子 由于库仑排斥的结果，侧壁侧壁从第一导电层和第二导电层中的一个向空气移动，导致第一导电层和第二导电层中的另一个。

    METHOD FOR MANUFACTURING LIQUID EJECTION HEAD SUBSTRATE
    139.
    发明申请
    METHOD FOR MANUFACTURING LIQUID EJECTION HEAD SUBSTRATE 有权
    制造液体喷射头基板的方法

    公开(公告)号：US20130139388A1

    公开(公告)日：2013-06-06

    申请号：US13669100

    申请日：2012-11-05

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Masataka Kato ,  Junichiro Iri ,  Keisuke Kishimoto ,  Taichi Yonemoto

    IPC: B21D53/76

    CPC classification number: B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1635 ,  H01J3/022 ,  H01J2329/00 ,  H01L21/76802 ,  H01L21/76825 ,  Y10T29/42 ,  Y10T29/49083 ,  Y10T29/49401

    Abstract: A method for manufacturing a liquid ejection head substrate, including: (1) a step for etching a substrate, which has an energy generating element at a side of a first surface, from a side of a second surface, which is a surface on the opposite side from the first surface, thereby to form at a time at least a part of a liquid supply port and a recess along a cutting section of the substrate; (2) a step for irradiating a laser beam toward the side of first surface from the etched surface of the recess so as to form a reformed portion inside the substrate; and (3) a step for cutting the substrate at the reformed portion.

    Abstract translation: 一种液体喷射头基板的制造方法，其特征在于，包括：（1）从第二表面侧的第一表面的侧面蚀刻具有能量产生元件的基板的工序， 从而形成沿着基板的切割部的液体供给口和凹部的至少一部分， （2）从所述凹部的被蚀刻面向所述第一面侧照射激光的步骤，以在所述基板内形成重整部; 和（3）在重整部分切割基板的步骤。

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