Projection lithography photomask blanks, preforms and method of making
    143.
    发明申请
    Projection lithography photomask blanks, preforms and method of making 失效
    投影光刻光掩模坯料,预成型件和制造方法

    公开(公告)号:US20010027025A1

    公开(公告)日:2001-10-04

    申请号:US09876194

    申请日:2001-06-06

    Abstract: The invention includes methods of making lithography photomask blanks. The invention also includes lithography photomask blanks and preforms for producing lithography photomask. The method of making a lithography photomask blank includes providing a soot deposition surface, producing SiO2 soot particles and projecting the SiO2 soot particles toward the soot deposition surface. The method includes successively depositing layers of the SiO2 soot particle on the deposition surface to form a coherent SiO2 porous glass preform body comprised of successive layers of the SiO2 soot particles and dehydrating the coherent SiO2 glass preform body to remove OH from the preform body. The SiO2 is exposed to and reacted with a fluorine containing compound and consolidated into a nonporous silicon oxyfluoride glass body with parallel layers of striae. The method further includes forming the consolidated silicon oxyfluoride glass body into a photomask blank having a planar surface with the orientation of the striae layer parallel to the photomask blank planar surface.

    Abstract translation: 本发明包括制造光刻光掩模坯料的方法。 本发明还包括光刻光掩模坯料和用于生产光刻光掩模的预成型件。 制造光刻光掩模坯料的方法包括提供烟灰沉积表面,产生SiO 2烟灰颗粒并将SiO 2烟灰颗粒投射到烟灰沉积表面。 该方法包括在沉积表面上依次沉积SiO 2烟灰颗粒的层,以形成由SiO 2烟灰颗粒的连续层组成的粘结SiO 2多孔玻璃预制体,并使相干的SiO 2玻璃预制体脱水以从预成型体中去除OH。 将SiO 2暴露于含氟化合物并与其反应,并固化成具有平行的条纹层的无孔氟氧化硅玻璃体。 该方法还包括将固化的氟氧化硅玻璃体形成为具有平坦表面的光掩模坯料,其中条纹层的取向平行于光掩模坯料平面。

    Vaccum ultraviolet transmitting silicon oxyfluoride lithography glass
    144.
    发明申请
    Vaccum ultraviolet transmitting silicon oxyfluoride lithography glass 失效
    真空紫外透射硅氧氟硅光刻玻璃

    公开(公告)号:US20010014424A1

    公开(公告)日:2001-08-16

    申请号:US09799987

    申请日:2001-03-06

    Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a nulldry,null silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1null1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

    Abstract translation: 公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃,其在真空紫外(VUV)波长区域中表现出非常高的透射率,同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不含OH含量之外,本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。

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