Abstract:
The invention relates to a silica glass compound having improved physical and chemical properties. In one embodiment, the present invention relates to a silica glass having a desirable brittleness in combination with a desirable density while still yielding a glass composition having a desired hardness and desired strength relative to other glasses. In another embodiment, the present invention relates to a silica glass composition that contains at least about 85 mole percent silicon dioxide and up to about 15 mole percent of one or more dopants selected from F, B, N, Al, Ge, one or more alkali metals (e.g., Li, Na, K, etc.), one or more alkaline earth metals (e.g., Mg, Ca, Sr, Ba, etc.), one or more transition metals (e.g., Ti, Zn, Y, Zr, Hf, etc.), one or more lanthanides (e.g., Ce, etc.), or combinations of any two or more thereof.
Abstract:
A mixed quartz powder contains quartz powder and two or more types of doping element in an amount of from 0.1 to 20 mass %. The aforementioned doped elements include a first dope element selected from the group consisting of N, C and F, and a second dope element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, the lanthanides and the actinides. The “quartz powder” is a powder of crystalline quartz or it is a powder of glassy SiO2 particles. It is made form natural occurring quartz or it is fabricated synthetically. The “quartz powder” may be doped. The compounding ratio of the total amount (M1) of the aforementioned first elements and the total amount (M2) of the aforementioned second elements as the ratio of the number of atoms (M1)/(M2) is preferably from 0.1 to 20. Al as well as the aforementioned doped elements is preferably included in a mixed quartz powder of this invention.
Abstract:
A quartz glass which would not become a source for the contamination even if it contains metallic impurities. This quartz glass includes a region where a concentration of E′ center as measured by means of an electron spin resonance analysis is 3×1019 cm−3 or more. This quartz glass can be manufactured by a method including the steps of forming an initial quartz glass by melting and quenching a raw material for quartz glass, and implanting therein an ion, which is capable of entering into an SiO2 network of the initial quartz glass and substantially incapable of externally diffusing, to increase a concentration of E′ center in at least part of the initial quartz glass. This quartz glass can be manufactured by a method making use of a quartz glass raw material containing 0.01 to 0.1% by weight of silicon, by a method of irradiating ultraviolet ray to the initial quartz glass, or by a method of giving an abrasion damage to the surface of the initial quartz glass by means of sand blast.
Abstract:
A quartz glass which would not become a source for the contamination even if it contains metallic impurities. This quartz glass includes a region where a concentration of E' center as measured by means of an electron spin resonance analysis is 3.times.10.sup.19 cm.sup.-3 or more. This quartz glass can be manufactured by a method including the steps of forming an initial quartz glass by melting and quenching a raw material for quartz glass, and implanting therein an ion, which is capable of entering into an SiO.sub.2 network of the initial quartz glass and substantially incapable of externally diffusing, to increase a concentration of E' center in at least part of the initial quartz glass. This quartz glass can be manufactured by a method making use of a quartz glass raw material containing 0.01 to 0.1% by weight of silicon, by a method of irradiating ultraviolet ray to the initial quartz glass, or by a method of giving an abrasion damage to the surface of the initial quartz glass by means of sand blast.
Abstract:
A mixed quartz powder contains quartz powder and two or more types of doping element in an amount of from 0.1 to 20 mass %. The aforementioned doped elements include a first dope element selected from the group consisting of N, C and F, and a second dope element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, the lanthanides and the actinides. The “quartz powder” is a powder of crystalline quartz or it is a powder of glassy SiO2 particles. It is made form natural occurring quartz or it is fabricated synthetically. The “quartz powder” may be doped. The compounding ratio of the total amount (M1) of the aforementioned first elements and the total amount (M2) of the aforementioned second elements as the ratio of the number of atoms (M1)/(M2) is preferably from 0.1 to 20. Al as well as the aforementioned doped elements is preferably included in a mixed quartz powder of this invention.
Abstract:
First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.05 cm−1 or more, and the silica porous body was subjected to a reduction treatment, followed by baking, thereby forming a dense glass body.
Abstract:
The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.
Abstract:
A composition represented by the formula Si1nullxGexO2(1nully)N1.33y, wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5null10null6null C.null1 to about 5.0null10null6null C. null1. The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.
Abstract:
A composition represented by the formula Si1−xGexO2(1−y)N1.33y, wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5×10−6° C.−1 to about 5.0×10−6° C.−1. The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.
Abstract:
An optical component made of synthetic quartz glass includes a glass structure substantially free of oxygen defect sites and having a hydrogen content of 0.1×1016 to 1.0×1018 molecules/cm3, an SiH group content of less than 2×1017 molecules/cm3, a hydroxyl group content of 0.1 to 100 wt. ppm, and an Active temperature of less than 1070° C. The optical component undergoes a laser-induced change in the refractive index in response to irradiation by a radiation with a wavelength of 193 nm using 5×109 pulses with a pulse width of 125 ns and a respective energy density of 500 μJ/cm2 at a pulse repetition frequency of 2000 Hz. The change totals a first measured value M193 nm when measured using the applied wavelength of 193 nm and a second measured value M633 nm when measured using a measured wavelength of 633 nm. The ratio M193 nm/M633 nm is less than 1.7.