公开(公告)号：US11519871B2

公开(公告)日：2022-12-06

申请号：US16867770

申请日：2020-05-06

Applicant: FEI Company

Inventor： Jan Klusá{hacek over (c)}ek ,  Tomá{hacek over (s)} Tůma ,  Ji{hacek over (r)}í Pet{hacek over (r)}ek

IPC: G01N23/2254 ,  G01N23/203 ,  H01J37/22 ,  H01J37/28

Abstract: The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample, and scanning said charged particle beam over said sample. A first detector is used for detecting emissions of a first type from the sample in response to the beam scanned over the sample. Using spectral information of detected emissions of the first type, a plurality of mutually different phases are assigned to said sample. An image representation of said sample is provided, wherein said image representation contains different color hues. The color hues are selected from a pre-selected range of consecutive color hues in such a way that the selected color hues comprise mutually corresponding intervals within said pre-selected range of consecutive color hues.

公开(公告)号：US11519719B2

公开(公告)日：2022-12-06

申请号：US17002614

申请日：2020-08-25

Applicant: KLA Corporation

Inventor： Andrei V. Shchegrov ,  Antonio Arion Gellineau ,  Sergey Zalubovsky

IPC: G01N23/201 ,  G01B11/14 ,  H01L21/66 ,  G01B11/26 ,  G03F7/20 ,  G01N21/47 ,  H01J37/28 ,  G01N21/21 ,  G01B11/06 ,  H05G2/00 ,  G01N21/95 ,  G01B15/00 ,  G01N23/20

Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the detector for relatively large targets. In some embodiments, a high resolution detector with small point spread function (PSF) is employed to mitigate detector PSF limits on achievable Q resolution. In some embodiments, the detector locates an incident photon with sub-pixel accuracy by determining the centroid of a cloud of electrons stimulated by the photon conversion event. In some embodiments, the detector resolves one or more x-ray photon energies in addition to location of incidence.

公开(公告)号：US20220375716A1

公开(公告)日：2022-11-24

申请号：US17713189

申请日：2022-04-04

Applicant: ASML Netherlands B.V.

Inventor： Yongxin WANG ,  Weiming REN ,  Zhonghua DONG ,  Zhongwei CHEN

IPC: H01J37/244 ,  H01J37/28 ,  G01N23/2251

Abstract: Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

公开(公告)号：US11508551B2

公开(公告)日：2022-11-22

申请号：US16691847

申请日：2019-11-22

Applicant: KLA CORPORATION

Inventor： Henning Stoschus ,  Stefan Eyring ,  Christopher Sears

IPC: H01J37/28 ,  H01J37/304 ,  G01N23/2251 ,  H01J37/22 ,  H01L21/66 ,  G06N20/00

Abstract: A detection and correction method for an electron beam system are provided. The method includes emitting an electron beam towards a specimen; modulating a beam current of the electron beam to obtain a beam signal. The method further includes detecting, using an electron detector, secondary and/or backscattered electrons emitted by the specimen to obtain electron data, wherein the electron data defines a detection signal. The method further includes determining, using a processor, a phase shift between the beam signal and the detection signal. The method further includes filtering, using the processor, the detection signal based on the phase shift.

公开(公告)号：US11501950B2

公开(公告)日：2022-11-15

申请号：US17330500

申请日：2021-05-26

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei Minekawa ,  Kohei Chiba ,  Muneyuki Fukuda ,  Takanori Kishimoto

IPC: H01J37/22 ,  H01J37/26 ,  H01J37/28

Abstract: Provided is a technique capable of achieving both throughput and robustness for a function of adjusting brightness (B) and contrast (C) of a captured image in a charged particle beam device. The charged particle beam device includes a computer system having a function (ABCC function) of adjusting the B and the C of an image obtained by imaging a sample. The computer system determines whether adjustment is necessary based on a result obtained by evaluating a first image obtained by imaging an imaging target of the sample (step S2), executes, when the adjustment is necessary based on a result of the determination, the adjustment on a second image of the imaging target to set an adjusted B value and an adjusted C value (step S4), and captures a third image of the imaging target based on the adjusted setting values to generate an image for observation (step S5).

公开(公告)号：US20220359153A1

公开(公告)日：2022-11-10

申请号：US17638695

申请日：2019-08-27

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroki KAWAMOTO ,  Keiji TAMURA ,  Toshie YAGUCHI

IPC: H01J37/28 ,  H01J37/073 ,  H01J37/244 ,  H01J37/22

Abstract: The invention is to simplify operations performed when imaging an electron diffraction pattern by using a transmission electron microscope. As a solution to the problem, a transmission electron microscope includes a detector to which an electron diffraction pattern is projected, a mask for zero-order wave configured to be inserted into and pulled out from between a sample and the detector, and a current detector configured to be inserted into and pulled out from a detection region of the zero-order waves in a state where the mask is inserted. An amount of current of electron beams emitted to the mask is measured in real time, and the measurement result is automatically reflected in settings of imaging conditions of an imaging camera provided in the transmission electron microscope.

公开(公告)号：US20220351938A1

公开(公告)日：2022-11-03

申请号：US17702343

申请日：2022-03-23

Applicant: Hitachi High-Tech Corporation

Inventor： Yusuke NAKAMURA ,  Yusuke ABE ,  Kenji TANIMOTO ,  Takeyoshi OHASHI

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

Abstract: An object of the invention is to acquire a high-quality image while maintaining an improvement in throughput of image acquisition (measurement (length measurement)). The present disclosure provides a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.

公开(公告)号：US20220351937A1

公开(公告)日：2022-11-03

申请号：US17243478

申请日：2021-04-28

Applicant: Applied Materials Israel Ltd.

Inventor： Yehuda Zur ,  Igor Petrov

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/20 ,  H01J37/18

Abstract: A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

公开(公告)号：US11476082B1

公开(公告)日：2022-10-18

申请号：US17688339

申请日：2022-03-07

Applicant: Integrated Dynamic Electron Solutions, Inc.

Inventor： Ruth Shewmon Bloom ,  Bryan Walter Reed ,  Daniel Joseph Masiel ,  Sang Tae Park

IPC: H01J37/24 ,  H01J37/29 ,  H01J37/28 ,  H01J37/147

Abstract: A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

公开(公告)号：US11475557B2

公开(公告)日：2022-10-18

申请号：US16879897

申请日：2020-05-21

Applicant: NuFlare Technology, Inc.

Inventor： Shusuke Yoshitake

IPC: G06T7/00 ,  H01J37/28 ,  G03F7/20

Abstract: A mask inspection apparatus includes an image acquisition mechanism that acquires an optical image of the pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident direction of the inspection light used for inspecting the pattern formed on the EUV mask, and the arrangement direction of the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus.