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    Method of manufacturing a micromechanical component
    151.
    发明申请
    Method of manufacturing a micromechanical component 失效
    微机械部件的制造方法

    公开(公告)号：US20020119589A1

    公开(公告)日：2002-08-29

    申请号：US10057455

    申请日：2002-01-24

    Inventor： Frank Fischer ,  Wilhelm Frey ,  Udo Bischof ,  Lars Metzger

    IPC: H01L021/00

    CPC classification number: B81C1/00896 ,  B81C2201/053

    Abstract: A method of manufacturing a micromechanical component has the steps: providing a substrate having a front side and a back side; structuring the front side of the substrate; at least partially covering the structured front side of the substrate with a protective layer containing germanium; structuring the back of the substrate; and at least partially removing the protective layer containing germanium from the structured front side of the substrate.

    Abstract translation: 微机械部件的制造方法具有以下步骤：提供具有正面和背面的基板; 构造衬底的前侧; 至少部分地用包含锗的保护层覆盖所述基板的结构化正面; 构造衬底的背面; 并且从所述基板的结构化正面至少部分地去除含有锗的保护层。

    Microelectromechanical structures defined from silicon on insulator wafers
    153.
    发明授权
    Microelectromechanical structures defined from silicon on insulator wafers 有权
    由绝缘体上硅晶片定义的微机电结构

    公开(公告)号：US06362512B1

    公开(公告)日：2002-03-26

    申请号：US09468423

    申请日：1999-12-21

    Applicant: Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

    Inventor： Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

    IPC: H01L2982

    CPC classification number: B81B3/0083 ,  B81C2201/0109 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2201/053 ,  G02B6/4214

    Abstract: A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.

    Abstract translation: 器件结构被限定在由来自处理晶片的绝缘体层（例如氧化物层）分离的单晶硅（SCS）层中。 SCS可以通过晶片接合连接到绝缘体，并且通过光刻图案和干蚀刻被选择性地蚀刻。 可以在蚀刻的SCS上沉积牺牲氧化物层，在其上沉积多晶硅。 沉积保护性氧化物层，并集成CMOS电路和传感器。 释放了连接到CMOS电路的传感器的硅微结构。 此外，可以通过牺牲氧化物层蚀刻孔，牺牲氧化物可以沉积在蚀刻的SCS上，多晶硅可以沉积在牺牲氧化物上，PSG可以沉积在多晶硅层上，然后可以对其进行图案化。

    Manufacturing method for micromechanical component
    155.
    发明授权
    Manufacturing method for micromechanical component 有权
    微机械部件的制造方法

    公开(公告)号：US06187607B1

    公开(公告)日：2001-02-13

    申请号：US09292282

    申请日：1999-04-15

    Applicant: Michael Offenberg ,  Udo Bischof ,  Markus Lutz

    Inventor： Michael Offenberg ,  Udo Bischof ,  Markus Lutz

    IPC: H01L21302

    CPC classification number: G01C19/5769 ,  B81B2201/025 ,  B81B2203/0136 ,  B81C1/00571 ,  B81C2201/014 ,  B81C2201/053

    Abstract: A manufacturing method for a micromechanical component, and in particular for a micromechanical rotation rate sensor, which has a supporting first layer, an insulating second layer that is arranged on the first layer, and a conductive third layer that is arranged on the second layer. The method includes the following steps: provide the second layer, in the form of patterned first and second insulation regions, on the first layer; provide a first protective layer on an edge region of the first insulation regions and on a corresponding boundary region of the first layer; provide the third layer on the structure resulting from the previous steps; pattern out a structure of conductor paths running on the first insulation regions, and a functional structure of the micromechanical component above the second insulation regions, from the third layer; and remove the second layer in the second insulation regions, the second layer being protected in the first insulation regions by the first protective layer in such a way that it is essentially not removed there.

    Abstract translation: 具有支撑第一层，布置在第一层上的绝缘第二层和布置在第二层上的导电第三层的微机械组件的制造方法，特别是用于微机械转速传感器的制造方法。 该方法包括以下步骤：在第一层上提供呈图案化的第一和第二绝缘区域的形式的第二层; 在所述第一绝缘区域的边缘区域和所述第一层的对应边界区域上提供第一保护层; 提供由上述步骤导致的结构上的第三层; 形成在第一绝缘区域上运行的导体路径的结构以及来自第三层的第二绝缘区域上方的微机械部件的功能结构; 并且在所述第二绝缘区域中移除所述第二层，所述第二层在所述第一绝缘区域中被所述第一保护层保护，使得其基本上不被去除。

    Method of forming cantilever structure in microelectromanical system
    156.
    发明授权
    Method of forming cantilever structure in microelectromanical system 失效
    微电子系统中悬臂结构的形成方法

    公开(公告)号：US6046066A

    公开(公告)日：2000-04-04

    申请号：US37819

    申请日：1998-03-10

    Applicant: Yean-Kuen Fang ,  Jyh-Jier Ho ,  Chiun-Wei Chu

    Inventor： Yean-Kuen Fang ,  Jyh-Jier Ho ,  Chiun-Wei Chu

    IPC: B81B3/00 ,  B81C1/00 ,  H01L21/306

    CPC classification number: B81C1/0038 ,  B81B2203/0118 ,  B81C2201/053 ,  Y10S438/943

    Abstract: The present invention relates to a new process of the cantilever structure in the micro-electro-mechanical system (MEMS), and more particularly, to a process that could overcome the contamination problem on the undesired areas during the thin-film growth. Their advantages include not only to substitute the complex technique with sacrificial layer, but also to increase the yield for its simple structure and to deal the sub-micron microelectromechanical system technology for the mature stage on the wet-etching skill.

    Abstract translation: 本发明涉及微机电系统（MEMS）中的悬臂结构的新工艺，更具体地说，涉及可以克服薄膜生长过程中不期望的区域的污染问题的方法。 它们的优点不仅在于牺牲层替代复杂技术，而且还可以提高其简单结构的产量，并将成熟阶段的亚微米微机电系统技术应用于湿蚀刻技术。

    Microstructure suspended by a microsupport
    157.
    发明授权
    Microstructure suspended by a microsupport 失效
    由微型支架悬挂的微结构

    公开(公告)号：US5962909A

    公开(公告)日：1999-10-05

    申请号：US711915

    申请日：1996-09-12

    Applicant: Hubert Jerominek ,  Martin Renaud ,  Nicholas R. Swart

    Inventor： Hubert Jerominek ,  Martin Renaud ,  Nicholas R. Swart

    IPC: B81B3/00 ,  G01J5/20 ,  H01L29/00 ,  H01L23/48 ,  H01L29/40 ,  H01L31/00

    CPC classification number: B81C1/00142 ,  G01J5/20 ,  B81B2203/0315 ,  B81C2201/053

    Abstract: The microbridge structure comprises a substrate layer provided with two first electrical contacts, a microstructure provided with two second electrical contacts, and a micro support for suspending the microstructure over and at a predetermined distance from the substrate layer. The micro support extends along a vertical axis. The micro support has a central upper cavity extending along the vertical axis within the micro support. The micro support has a lower end connected to the substrate layer and an upper end connected to the microstructure for supporting the microstructure with respect to the substrate layer. The micro support is a multilayer micro support comprising two conductive paths and a layer made of dielectric material. The conductive paths and the layer of the micro support extend from the upper end to the lower end thereof. The two conductive paths connect respectively the two first contacts to the two second contacts. The present invention is also concerned with a method for forming a microstructure suspended by a micro support.

    Abstract translation: 微桥结构包括设置有两个第一电触点的基底层，设置有两个第二电触点的微结构，以及用于将微结构悬置在基底层上方且距离基底层预定距离的微支撑。 微支架沿垂直轴线延伸。 微支架具有在微支架内沿着垂直轴延伸的中心上腔。 微支撑件具有连接到基底层的下端，并且连接到微结构的上端相对于基底层支撑微结构。 微载体是包含两个导电路径和由电介质材料制成的层的多层微载体。 导电路径和微支架的层从其上端延伸到下端。 两个导电路径将两个第一触点分别连接到两个第二触点。 本发明还涉及一种形成由微型载体悬挂的微结构的方法。

    Fabricating method for silicon devices using a two step silicon etching process
    159.
    发明授权
    Fabricating method for silicon devices using a two step silicon etching process 失效
    使用两步硅蚀刻工艺的硅器件的制造方法

    公开(公告)号：US5006202A

    公开(公告)日：1991-04-09

    申请号：US533204

    申请日：1990-06-04

    Applicant: William G. Hawkins ,  Donald J. Drake ,  James F. O'Neill

    Inventor： William G. Hawkins ,  Donald J. Drake ,  James F. O'Neill

    IPC: B41J2/16 ,  B81B1/00 ,  C23F1/00 ,  C23F1/02 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308

    CPC classification number: B41J2/1642 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1645 ,  B81B1/004 ,  B81C1/00896 ,  H01L21/30608 ,  H01L21/3085 ,  B81B2201/052 ,  B81C2201/053

    Abstract: Disclosed is a method of fabricating a precision etched, three dimensional device from a silicon wafer, wherein the etching is done from one side of the wafer using a two step silicon etching process. A two-sided deposition of a robust protective layer, such as polycrystalline silicon, is placed over a two-sided deposition of a chemical masking layer such as silicon dioxide. The two layers are concurrently patterned with first and second sets of vias on one side of the wafer, while the opposite side is protected by the protective layer. The protective layer is removed to permit deposition of a second masking layer such as silicon nitride, followed by deposition of a second protective layer. Again, the second protective layer prevents damage to the fragile second masking layer on the wafer backside while its frontside is patterned with a similar set of vias aligned with the first set of vias in the first masking layer. This similar set of vias is sequentially formed in both the second protective layer and the underlying second masking layers. Then the wafer is placed in an etchant bath so that the first set of recesses is anisotropically etched in the wafer frontside side. Next, the second protective layer and second masking layer are removed to permit anisotropic etching of the second set of recesses through the second set of vias in the first masking layer. If the protective layer is polycrystalline silicon, it is concurrently etch-removed during the initial etching of the silicon wafer.

    Abstract translation: 公开了一种从硅晶片制造精密蚀刻的三维器件的方法，其中使用两步硅蚀刻工艺从晶片的一侧进行蚀刻。 坚固的保护层（例如多晶硅）的双面沉积置于诸如二氧化硅的化学掩蔽层的双面沉积上。 两层同时用晶片一侧的第一组和第二组通孔构图，而相对侧被保护层保护。 去除保护层以允许沉积诸如氮化硅的第二掩蔽层，随后沉积第二保护层。 再次，第二保护层防止损坏晶片背面上的脆弱的第二掩蔽层，同时其前侧用与第一掩蔽层中的第一组通孔对准的相似的一组通孔构图。 在第二保护层和下面的第二掩蔽层中顺序地形成这种类似的通孔。 然后将晶片放置在蚀刻剂浴中，使得第一组凹陷在晶片前侧被各向异性地蚀刻。 接下来，去除第二保护层和第二掩蔽层，以允许通过第一掩模层中的第二组通孔对第二组凹陷进行各向异性蚀刻。 如果保护层是多晶硅，则在硅晶片的初始蚀刻期间同时进行蚀刻去除。

    Protective member forming apparatus
    160.
    发明授权
    Protective member forming apparatus 有权

    公开(公告)号：US11794384B2

    公开(公告)日：2023-10-24

    申请号：US17380556

    申请日：2021-07-20

    Applicant: DISCO CORPORATION

    Inventor： Yoshinori Kakinuma

    IPC: B29C43/52 ,  B29C43/18 ,  B81C1/00 ,  B29L31/00

    CPC classification number: B29C43/52 ,  B29C43/18 ,  B81C1/00825 ,  B81C1/00896 ,  B29C2043/189 ,  B29C2043/525 ,  B29L2031/756 ,  B81C2201/053

    Abstract: A protective member forming apparatus includes an ultraviolet radiation applying table that supports a workpiece on a support surface of a support plate thereof through which ultraviolet rays are transmittable, a delivery unit that holds a resin sheet to which the workpiece is fixed, to unload the workpiece from the ultraviolet radiation applying table, a resin supply unit that supplies an ultraviolet-curable liquid resin to the resin sheet placed on the support surface, a pressing unit that presses the workpiece from a reverse side thereof toward the liquid resin supplied to the resin sheet placed on the support surface, and an ionizer unit that ejects ionized air to the support surface of the ultraviolet radiation applying table.

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