公开(公告)号：US20180359571A1

公开(公告)日：2018-12-13

申请号：US15781364

申请日：2015-12-14

Applicant: Goertek Inc.

Inventor： Junkai ZHAN ,  Mengjin CAI ,  Guanxun QIU ,  Zonglin ZHOU ,  Qinglin SONG

IPC: H04R19/04 ,  B81C1/00 ,  B81B7/00 ,  H04R31/00

CPC classification number: H04R19/04 ,  B81B7/0029 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0292 ,  B81C1/00158 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003

Abstract: An acoustic sensor integrated MEMS microphone structure and a fabrication method thereof. A diaphragm (3e) and back-pole (7) which forms a condenser structure are formed on a substrate (1) having at least one recessed slot (1a) on the top. A sensitive electrode is formed on the substrate (1), the sensitive electrode comprising a fixed portion (3b) fixed on the substrate (1) via a sacrificial layer (2), and a bending portion (3a) inserted into the recessed slot (1a), wherein the bending portion and the side wall of the recessed slot form the condenser structure. The integrated structure integrates the condenser structure of the microphone and condenser structure of the acoustic sensor on a substrate (1), thereby increasing the integration level thereof and reducing the overall size of the package. Meanwhile, the microphone diaphragm (3e) and the sensitive electrode of the acoustic sensor can be fabricated on a same substrate (1) at the same time, from the same material, and using the same fabricating process to increase production efficiency.

公开(公告)号：US09902611B2

公开(公告)日：2018-02-27

申请号：US15111044

申请日：2015-01-13

Applicant: NextInput, Inc.

Inventor： Amnon Brosh ,  Ryan Diestelhorst ,  Steven Nasiri

IPC: B81B3/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/20

CPC classification number: B81B3/0056 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81C1/00626 ,  G01L1/18 ,  G01L1/205 ,  G01L9/0047 ,  G01L9/0048

Abstract: Described herein is a miniaturized and ruggedized wafer level MEMS force sensor composed of a base and a cap. The sensor employs multiple flexible membranes, a mechanical overload stop, a retaining wall, and piezoresistive strain gauges.

公开(公告)号：US09850124B2

公开(公告)日：2017-12-26

申请号：US14923602

申请日：2015-10-27

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ching-Han Huang ,  Hsun-Wei Chan ,  Yu-Hsuan Tsai

IPC: H01L31/0232 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0067 ,  B81B2201/0292 ,  B81C1/00317 ,  B81C2203/0109 ,  H01L31/0203 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2924/16151 ,  H01L2924/16195 ,  H01L2924/00014

Abstract: A semiconductor device package includes a carrier, a sensor element disposed on or within the carrier, a cover and a filter. The cover includes a base substrate and a periphery barrier. The base substrate includes an inner sidewall. The inner sidewall of the base substrate defines a penetrating hole extending from a top surface of the base substrate to a bottom surface of the base substrate; at least a portion of the inner sidewall of the base substrate is tilted. The periphery barrier is coupled to the bottom surface of the base substrate and contacts a top surface of the carrier. The filter is disposed on the top surface of the base substrate and covers the penetrating hole.

公开(公告)号：US20170318396A1

公开(公告)日：2017-11-02

申请号：US15377627

申请日：2016-12-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Roberto BRIOSCHI ,  Marco Omar GHIDONI

IPC: H04R19/04 ,  B81C1/00 ,  H04R31/00 ,  H04R1/44 ,  H04R7/06 ,  H04R19/00 ,  B81B7/04

CPC classification number: H04R19/04 ,  B06B1/0292 ,  B81B7/04 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2201/047 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/15151 ,  H04R1/44 ,  H04R3/005 ,  H04R7/06 ,  H04R19/005 ,  H04R31/003 ,  H04R31/006 ,  H04R2201/003 ,  H04R2499/11 ,  H01L2924/00014

Abstract: A multi-device module, comprising: a first substrate, which houses a first MEMS transducer, designed to transduce a first environmental quantity into a first electrical signal, and an integrated circuit, coupled to the first MEMS transducer for receiving the first electrical signal; a second substrate, which houses a second MEMS transducer, designed to transduce a second environmental quantity into a second electrical signal; and a flexible printed circuit, mechanically connected to the first and second substrates and electrically coupled to the integrated circuit and to the second MEMS transducer so that the second electrical signal flows, in use, from the second MEMS transducer to the integrated circuit.

公开(公告)号：US20170305741A1

公开(公告)日：2017-10-26

申请号：US15518053

申请日：2015-10-12

Applicant: Nokia Technologies Oy

Inventor： Darryl COTTON ,  Adam ROBINSON ,  Piers ANDREW

IPC: B81B7/00 ,  H05K1/16 ,  H05K1/02

CPC classification number: B81B7/0054 ,  B81B2201/0278 ,  B81B2201/0292 ,  H05K1/0283 ,  H05K1/167 ,  H05K2201/09018 ,  H05K2201/09109 ,  H05K2201/09263 ,  H05K2201/10151

Abstract: An apparatus and method wherein the method comprises: a deformable substrate; a curved support structure configured to support at least a portion of a resistive sensor wherein the resistive sensor comprises a first electrode, a second electrode and a resistive sensor material provided between the electrodes; at least one support configured to space the curved support structure from the deformable substrate so that when the deformable substrate is deformed the curved support structure is not deformed in the same way; wherein the resistive sensor is positioned on the curved support structure so as to limit deformation of the resistive sensor when the deformable substrate is deformed.

公开(公告)号：US09670058B2

公开(公告)日：2017-06-06

申请号：US14501537

申请日：2014-09-30

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Antonio Di-Giacomo ,  Pascal Fornara

IPC: B81B7/02 ,  G01P13/00 ,  G01P15/135 ,  G01C9/12 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81B7/02 ,  B81B3/0051 ,  B81B2201/0235 ,  B81B2201/0292 ,  B81C1/00174 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0771 ,  G01C9/12 ,  G01P13/00 ,  G01P15/135

Abstract: An integrated circuit includes a mechanical device for detection of spatial orientation and/or of change in orientation of the integrated circuit. The device is formed in the BEOL and includes an accommodation whose sides include metal portions formed within various metallization levels. A mobile metal component is accommodated within the accommodation. A monitor inside the accommodation defines a displacement area for the metal component and includes electrically conductive elements disposed at the periphery of the displacement area. The component is configured so as to, under the action of the gravity, come into contact with the two electrically conductive elements in response to a given spatial orientation of the integrated circuit. A detector is configured to detect an electrical link passing through the component and the electrically conductive elements.

公开(公告)号：US20160347606A1

公开(公告)日：2016-12-01

申请号：US14962945

申请日：2015-12-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giuseppe BRUNO ,  Sebastiano CONTI ,  Mario CHIRICOSTA ,  Michele VAIANA ,  Calogero Marco IPPOLITO ,  Mario MAIORE ,  Daniele CASELLA

IPC: B81B7/00

CPC classification number: B81B7/007 ,  B81B7/02 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2207/094 ,  G01L19/0092 ,  G01N27/223 ,  H01L23/3121 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A packaged sensor assembly includes: a packaging structure, having at least one opening; a humidity sensor and a pressure sensor, which are housed inside the packaging structure and communicate fluidically with the outside through the opening, and a control circuit, operatively coupled to the humidity sensor and to the pressure sensor; wherein the humidity sensor and the control circuit are integrated in a first chip, and the pressure sensor is integrated in a second chip distinct from the first chip and bonded to the first chip.

Abstract translation: 包装传感器组件包括：具有至少一个开口的包装结构; 湿度传感器和压力传感器，其容纳在包装结构内并通过开口与外部流体连通;以及控制电路，可操作地耦合到湿度传感器和压力传感器; 其中所述湿度传感器和所述控制电路集成在第一芯片中，并且所述压力传感器集成在与所述第一芯片不同的第二芯片中并且被结合到所述第一芯片。

公开(公告)号：US09446938B2

公开(公告)日：2016-09-20

申请号：US14774194

申请日：2014-04-24

Applicant: DENSO CORPORATION

Inventor： Tetsuo Yoshioka ,  Shinya Asai ,  Jyunya Nishida

IPC: B81B3/00 ,  G01P15/125 ,  G01P15/08 ,  B81C3/00 ,  G01L9/12 ,  H01L29/84

CPC classification number: B81B3/0086 ,  B81B3/0021 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0136 ,  B81C3/001 ,  B81C2201/019 ,  G01L9/0073 ,  G01L9/12 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L29/84

Abstract: A capacitance type physical quantity sensor includes: a first substrate; and a second substrate bonded to the first substrate through an insulating film. The second substrate includes first and second groove portions at a place of the second substrate facing an end portion of the first and second support units formed on the first substrate on a side opposite to the movable unit. A part of the end portion of the first support unit protrudes over the first groove portion. A part of the end portion of the second support unit protrudes over the second groove portion.

Abstract translation: 电容型物理量传感器包括：第一基板; 以及通过绝缘膜与第一基板接合的第二基板。 第二基板包括在第二基板的与可移动单元相对的一侧上形成在第一基板上的第一和第二支撑单元的端部的位置处的第一和第二槽部。 第一支撑单元的端部的一部分在第一槽部上突出。 第二支撑单元的端部的一部分在第二槽部分上突出。

公开(公告)号：US09365414B2

公开(公告)日：2016-06-14

申请号：US14257553

申请日：2014-04-21

Applicant: Philip H. Bowles ,  Stephen R. Hooper

Inventor： Philip H. Bowles ,  Stephen R. Hooper

IPC: H01L29/84 ,  B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81B2207/07 ,  B81C1/0023 ,  B81C2203/0154 ,  B81C2203/0792 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A small area semiconductor device package containing two or more MEMS sensor device die and a controller die for the sensor devices is provided. The controller die is mounted on top of the largest MEMS sensor device die (e.g., a gyroscope) and over a second MEMS sensor device die (e.g., an accelerometer). In one embodiment, the controller die is also mounted on the top of the second MEMS sensor device die. In another embodiment, the controller die overhangs the second MEMS sensor device die, which is of a lesser thickness than the first MEMS sensor device die.

Abstract translation: 提供了一种包含两个或更多个MEMS传感器器件管芯和用于传感器器件的控制器管芯的小面积半导体器件封装。 控制器管芯安装在最大的MEMS传感器器件管芯（例如，陀螺仪）的顶部上，并且安装在第二MEMS传感器器件管芯（例如，加速度计）上。 在一个实施例中，控制器管芯也安装在第二MEMS传感器器件管芯的顶部上。 在另一个实施例中，控制器模具突出第二MEMS传感器器件管芯，该第二MEMS传感器器件管芯的厚度小于第一MEMS传感器器件管芯的厚度。

公开(公告)号：US09340410B2

公开(公告)日：2016-05-17

申请号：US14336351

申请日：2014-07-21

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Inventor： Eric Ollier ,  Carine Marcoux

IPC: B81B7/00 ,  B81C1/00 ,  G01N30/60

CPC classification number: B81B7/0061 ,  B81B7/007 ,  B81B2201/0214 ,  B81B2201/0292 ,  B81B2201/058 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/00269 ,  B81C1/00309 ,  B81C2203/0118 ,  G01N30/6095

Abstract: A device comprising a substrate comprising at least one microelectronic and/or nanoelectronic structure comprising at least one sensitive portion and one fluid channel (2) defined between said substrate and a cap (6), where said fluid channel (2) comprises at least two apertures to provide a flow in said channel, where said microelectronic and/or nanoelectronic structure is located within the fluid channel, where said cap is assembled with the substrate at an assembly interface, where said device comprises electrical connections between said microelectronic and/or nanoelectronic structure and the exterior of the fluid channel (2), where said electrical connections (8) are formed by vias made through the substrate (4) directly below the microelectronic and/or nanoelectronic structure, and in electrical contact with said microelectronic and/or nanoelectronic structure.

Abstract translation: 一种包括衬底的器件，包括至少一个微电子和/或纳米电子结构，所述微电子和/或纳米电子结构包括限定在所述衬底和帽（6）之间的至少一个敏感部分和一个流体通道（2），其中所述流体通道（2）包括至少两个 孔，以在所述通道中提供流动，其中所述微电子和/或纳米电子结构位于流体通道内，其中所述盖与基板组装在组装界面处，其中所述装置包括所述微电子和/或纳米电子 结构和流体通道（2）的外部，其中所述电连接（8）由通过直接在微电子和/或纳米电子结构下面的基板（4）制成的通孔形成，并且与所述微电子和/或 纳米电子结构。