Abstract:
An optical fiber having increased mechanical strength is provided. The optical fiber includes an over cladding layer that has a compressive stress of at least 100 MPa.
Abstract:
In one embodiment the present disclosure is directed to a silica-titania glass with an internal transmission of >90%/cm at wavelengths from 340 nm to 840 nm. In another embodiment the internal transmission is >93%/cm at wavelengths from 340 nm to 840 nm. In a further embodiment the internal transmission is >95%/cm at wavelengths from 340 nm to 840 nm. In another embodiment the disclosure is directed to a silica-titania glass with an overall transmission through an optic made of the glass is >84% at wavelengths from 340 nm to 840 nm. In another embodiment overall transmission through an optic made of the glass is >86% at wavelengths from 340 nm to 840 nm. In a further embodiment the overall transmission through an optic made of the glass is >88% at wavelengths from 330 nm to 840 nm. In a further embodiment the silica-titania glass has a Ti+3 concentration level [Ti3+] less than 3 ppm by weight.
Abstract:
The present invention relates to a quartz glass blank for an optical component for transmitting radiation of a wavelength of 15 nm and shorter, the blank consisting of highly pure quartz glass, doped with titanium and/or fluorine, which is distinguished by an extremely high homogeneity. The homogeneity relates to the following features: a) micro-inhomogeneities caused by a local variance of the TiO2 distribution (
Abstract:
The present invention provides a TiO2—SiO2 glass whose coefficient of linear thermal expansion upon irradiation with high EUV energy light is substantially zero, which is suitable as an optical member of an exposure tool for EUVL. The present invention relates to a TiO2-containing silica glass having a halogen content of 100 ppm or more; a fictive temperature of 1,100° C. or lower; an average coefficient of linear thermal expansion in the range of from 20 to 100° C. of 30 ppb/° C. or lower; a temperature width ΔT, in which a coefficient of linear thermal expansion is 0±5 ppb/° C., of 5° C. or greater; and a temperature, at which a coefficient of linear thermal expansion is 0 ppb/° C., falling within the range of from 30 to 150° C.
Abstract:
A titania-doped quartz glass containing 3-12 wt % of titania at a titania concentration gradient less than or equal to 0.01 wt %/μm and having an apparent transmittance to 440 nm wavelength light of at least 30% at a thickness of 6.35 mm is of such homogeneity that it provides a high surface accuracy as required for EUV lithographic members, typically EUV lithographic photomask substrates.
Abstract:
The invention is directed to a method for reducing striae in ultra-low expansion glass, for example, silica-titania glass, by heat-treating the glass at temperatures above 1600° C. for a time in the range of 72-288 hours. The silica-titania glass is formed by substantially simultaneously forming, collecting and consolidating a silica-titania soot formed in one or a plurality of burners using silicon-containing feedstock and a titanium-containing feedstock. In one embodiment of the invention the glass is heat treated without forcing the glass to flow or “move”. The invention was found to reduce the magnitude of striae in an ultra-low expansion glass by at least 50%, and particularly reduces most of the “higher frequency” striae.
Abstract:
An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
Abstract:
A substrate that is suitable for an EUV mask or an EUV mask blank and excellent in flatness, is provided.A substrate for an EUV mask blank, which is made of a silica glass containing from 1 to 12 mass % of TiO2, wherein the surface roughness (rms) in a surface quality area of the substrate is at most 2 nm, and the maximum variation (PV) of the stress in the surface quality area of the substrate is at most 0.2 MPa.
Abstract:
The claimed invention relates to a process for producing an optical material for EUV lithography, wherein the optical material contains a silica glass having a TiO2 concentration of from 3 to 12 mass % and a hydrogen molecule content of less than 5×1017 molecules/cm3 in the glass. The process including coating a multilayer film on the silica glass by ion beam sputtering.
Abstract translation:所要求保护的发明涉及一种用于制造用于EUV光刻的光学材料的方法,其中所述光学材料包含玻璃中TiO 2浓度为3至12质量%且氢分子含量小于5×10 17分子/ cm 3的二氧化硅玻璃 。 该方法包括通过离子束溅射在二氧化硅玻璃上涂覆多层膜。
Abstract:
What is disclosed includes OD-doped synthetic silica glass capable of being used in optical elements for use in lithography below about 300 nm. OD-doped synthetic silica glass was found to have significantly lower polarization-induced birefringence value than non-OD-doped silica glass with comparable concentration of OH. Also disclosed are processes for making OD-doped synthetic silica glasses, optical member comprising such glasses, and lithographic systems comprising such optical member. The glass is particularly suitable for immersion lithographic systems due to the exceptionally low polarization-induced birefringence values at about 193 nm.