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    Stress control of semiconductor microstructures for thin film growth
    171.
    发明授权
    Stress control of semiconductor microstructures for thin film growth 有权
    用于薄膜生长的半导体微结构的应力控制

    公开(公告)号：US07109121B2

    公开(公告)日：2006-09-19

    申请号：US10876140

    申请日：2004-06-24

    Applicant: Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

    Inventor： Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

    IPC: H01L21/302

    CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/78603 ,  H01L29/78639 ,  Y10S438/962

    Abstract: A method of forming a suspended semiconductor film is provided comprising providing a semiconductor structure including a layer of semiconductor film over a sacrificial layer, the semiconductor film secured to a substrate; depositing a film of material over the semiconductor film that has a tensile or compressive strain with respect to the semiconductor film patterning the deposited film to leave opposed segments spaced from each other by a central portion of the semiconductor film; patterning the semiconductor film and removing the sacrificial layer beneath the semiconductor film to leave a semiconductor film section anchored to the substrate at at least two anchor positions, with the film segments remaining on the semiconductor film adjacent to the anchor positions and spaced from each other by the central position of the suspended semiconductor film such that the film segments apply a tensile or compressive stress to the suspended semiconductor film.

    Abstract translation: 提供一种形成悬浮半导体膜的方法，包括提供包括在牺牲层上的半导体膜层的半导体结构，所述半导体膜固定到基底上; 在半导体膜上沉积相对于图案化沉积膜的半导体膜具有拉伸或压缩应变的材料膜，以通过半导体膜的中心部分彼此隔开相对的部分; 图案化半导体膜并去除半导体膜下面的牺牲层，以在至少两个锚定位置处留下半导体膜部分锚定到衬底，其中膜片段保留在半导体膜上邻近锚定位置并且彼此间隔开 悬浮半导体膜的中心位置，使得膜段对悬浮的半导体膜施加拉伸或压缩应力。

    Method to control residual stress in a film structure and a system thereof
    172.
    发明申请
    Method to control residual stress in a film structure and a system thereof 有权
    控制膜结构中的残余应力的方法及其系统

    公开(公告)号：US20050227054A1

    公开(公告)日：2005-10-13

    申请号：US11061429

    申请日：2005-02-18

    Applicant: Michael Parthum

    Inventor： Michael Parthum

    IPC: B32B7/02

    CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/31504

    Abstract: A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.

    Abstract translation: 一种用于控制MEMS器件中的结构中的残余应力的方法及其结构包括为该结构选择总厚度和总体等效应力。 确定至少一组交替的第一和第二层中的每一个的厚度以控制至少交替的第一和第二层中的每一个相对于中性轴线的内部应力，并且基于所选择的总厚度形成结构 和所选择的整体等效应力。 至少交替的第一和第二层中的每一个被沉积到所确定的至少交替的第一和第二层中的每一个的厚度以形成该结构。

    Actuator
    173.
    发明授权
    Actuator 失效
    执行器

    公开(公告)号：US06949996B2

    公开(公告)日：2005-09-27

    申请号：US10121342

    申请日：2002-04-12

    Applicant: Kazuya Matsumoto ,  Masahiro Katashiro ,  Hiroshi Miyajima ,  Toshihiko Isokawa

    Inventor： Kazuya Matsumoto ,  Masahiro Katashiro ,  Hiroshi Miyajima ,  Toshihiko Isokawa

    IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  G02B26/10 ,  H02N1/00 ,  H04N1/113 ,  H01H51/22

    CPC classification number: G02B26/0841 ,  B81B3/0062 ,  B81B3/0086 ,  B81B2203/0109 ,  B81C2201/0167 ,  G02B26/085 ,  G02B26/101 ,  H02N1/006

    Abstract: A two-dimensional driving actuator comprises a flat spring structure, and a driver for driving the flat spring structure. The flat spring structure includes a moving plate, a moving inner frame surrounding the moving plate, first torsion bars coupling the moving plate and the moving inner frame so as to allow the moving plate to be vibrated relative to the moving inner frame, a fixed outer frame surrounding the moving inner frame, and second torsion bars coupling the moving inner frame and the fixed outer frame so as to allow the moving inner frame to be vibrated relative to the fixed outer frame. The flat spring structure is manufactured from a single semiconductor substrate. The first and second torsion bars are made of different materials.

    Abstract translation: 二维驱动致动器包括平板弹簧结构和用于驱动扁平弹簧结构的驱动器。 平板弹簧结构包括移动板，围绕移动板的移动内框架，联接移动板和移动内框架的第一扭杆，以允许移动板相对于移动内框架振动;固定外壳 围绕移动的内框架的框架，以及联接移动内框架和固定外框架的第二扭杆，以允许移动的内框架相对于固定的外框架振动。 扁平弹簧结构由单个半导体衬底制造。 第一和第二扭杆由不同的材料制成。

    Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication
    174.
    发明授权
    Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication 失效
    基于微机电系统的传感器，传感器阵列，感测系统，感测方法和制造方法

    公开(公告)号：US06844214B1

    公开(公告)日：2005-01-18

    申请号：US10604850

    申请日：2003-08-21

    Applicant: Ping Mei ,  Decai Sun ,  Robert A. Street

    Inventor： Ping Mei ,  Decai Sun ,  Robert A. Street

    IPC: B81B3/00 ,  H01L21/00 ,  H01L23/48 ,  H01R11/22

    CPC classification number: B81B3/0021 ,  B81B2201/0292 ,  B81B2201/038 ,  B81B2201/047 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01R12/52

    Abstract: A microelectromechanical system (MEMS) based sensor comprises: a substrate defining a plane; a first conductive material layer having a first stress, a first portion of the first conductive material layer being connected to the substrate and extending in a substantially parallel direction to the plane defined by the substrate and a second portion being disconnected from the substrate and extending in a substantially non-parallel direction to the plane defined by the substrate; and a sensor material layer formed over at least the second portion of the first conductive material layer, the sensor material layer having a second stress that is less than the first stress of the first conductive material layer. The stresses form a stress gradient that bends the second portion of the first conductive material layer and the sensor material layer formed over the second portion of the first conductive material layer away from the substrate.

    Abstract translation: 基于微机电系统（MEMS）的传感器包括：限定平面的基板; 具有第一应力的第一导电材料层，所述第一导电材料层的第一部分连接到所述衬底并且在基本上平行于由所述衬底限定的平面的方向上延伸，并且所述第二部分与所述衬底断开并且延伸到 基本上不平行于由衬底限定的平面的方向; 以及在所述第一导电材料层的至少第二部分上形成的传感器材料层，所述传感器材料层具有小于所述第一导电材料层的第一应力的第二应力。 应力形成应力梯度，该应力梯度使第一导电材料层的第二部分和形成在第一导电材料层的第二部分上方的传感器材料层远离衬底弯曲。

    Stress control of semiconductor microstructures for thin film growth
    175.
    发明申请
    Stress control of semiconductor microstructures for thin film growth 有权
    用于薄膜生长的半导体微结构的应力控制

    公开(公告)号：US20040232504A1

    公开(公告)日：2004-11-25

    申请号：US10876140

    申请日：2004-06-24

    Applicant: Wisconsin Alumni Research Foundation

    Inventor： Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

    IPC: H01L029/82

    CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/78603 ,  H01L29/78639 ,  Y10S438/962

    Abstract: A suspended semiconductor film is anchored to a substrate at at least two opposed anchor positions, and film segments are deposited on the semiconductor film adjacent to one or more of the anchor positions to apply either tensile or compressive stress to the semiconductor film between the film segments. A crystalline silicon film may be anchored to the substrate and have tensile stress applied thereto to reduce the lattice mismatch between the silicon and a silicon-germanium layer deposited onto the silicon film. By controlling the level of stress in the silicon film, the size, density and distribution of quantum dots formed in a high germanium content silicon-germanium film deposited on the silicon film can be controlled.

    Abstract translation: 悬浮的半导体膜在至少两个相对的锚固位置处锚定到基底，并且膜部分沉积在与一个或多个锚定位置相邻的半导体膜上，以将拉伸或压缩应力施加到膜段之间的半导体膜 。 结晶硅膜可以锚定到基底并且施加拉伸应力以减小硅和沉积在硅膜上的硅 - 锗层之间的晶格失配。 通过控制硅膜中的应力水平，可以控制沉积在硅膜上的高锗含量硅 - 锗膜中形成的量子点的尺寸，密度和分布。

    Thin film-structure and a method for producing the same
    176.
    发明申请
    Thin film-structure and a method for producing the same 失效
    薄膜结构及其制造方法

    公开(公告)号：US20040166664A1

    公开(公告)日：2004-08-26

    申请号：US10788337

    申请日：2004-03-01

    Applicant: Tokyo Institute of Technology

    Inventor： Akira Shimokohbe ,  Seiichi Hata

    IPC: H01L021/00 ,  H01L021/84 ,  H01L021/469

    CPC classification number: B81C1/00682 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C2201/0167

    Abstract: A thin film made of an amorphous material having a supercooled liquid phase region is formed on a substrate. Then, the thin film is heated to a temperature within the supercooled liquid phase region and is deformed by its weight, mechanical external force, electrostatic external force or the like, thereby to form a thin film-structure. Thereafter, the thin film-structure is cooled down to room temperature, which results in the prevention of the thin film's deformation.

    Abstract translation: 在基板上形成由具有过冷液相区域的非晶材料制成的薄膜。 然后，将薄膜加热至过冷液相区域内的温度，并通过其重量，机械外力，静电外力等变形，从而形成薄膜结构。 此后，将薄膜结构冷却至室温，从而防止薄膜的变形。

    MEMS encapsulated structure and method of making same
    178.
    发明申请
    MEMS encapsulated structure and method of making same 有权

    公开(公告)号：US20040097003A1

    公开(公告)日：2004-05-20

    申请号：US10300520

    申请日：2002-11-20

    Applicant: International Business Machines Corporation

    Inventor： Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

    IPC: H01L021/00 ,  H01L021/44

    CPC classification number: B81C1/00666 ,  B81B2201/014 ,  B81C2201/0167 ,  H01F2007/068 ,  H01H50/005

    Abstract: A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning an upper surface of the release material to form another trench, forming a first encapsulating layer that includes sidewalls within the another trench, forming a core layer within the first encapsulating layer, and forming a second encapsulating layer above the core layer, where the second encapsulating layer is connected to the sidewalls of the first encapsulating layer. Alternatively, the method includes forming a multilayer MEMS structure by photomasking processes to form a first metal layer, a second layer including a dielectric layer and a second metal layer, and a third metal layer. The core layer and the encapsulating layers are made of materials with complementary electrical, mechanical and/or magnetic properties.

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