Abstract:
An ion implanting apparatus and method are provided. The apparatus includes a plurality of dummy wafers and a plurality of dummy wafer cassettes. The dummy wafers are separately used for respective kinds of ions, and the plurality of dummy wafer cassettes separately store the dummy wafers separately used for the respective kinds of ions. The plurality of dummy wafer cassettes are installed in order to store the plurality of dummy wafers for the respective kinds of ions and use the dummy wafers for an ion implanting process.
Abstract:
A device for operating gas in the vacuum or low-pressure environment and for observation of the operation includes a housing. The housing has a thinner part formed at a side thereof, and at least one spacer mounted therein for partitioning off its inside into a gas chamber and at least one buffer chamber outside the gas chamber. The gas chamber has two inner apertures provided on the spacers above and below the gas chamber. The housing has two outer apertures provided respectively on a top side thereof and a bottom side thereof. All of the inner and outer apertures are coaxial with one another and located on the thinner part. The housing has a pumping port for communication with the buffer chamber, and a gas inlet for communication with the gas chamber.
Abstract:
An electrode structure used in a plasma processing apparatus which performs a predetermined process on an object (W) to be processed by using a plasma in a process chamber (26) in which a vacuum can be formed. An electrode unit (38) has a heater unit (44) therein. A cooling block (40) having a cooling jacket (58) is joined to the electrode unit (38) so as to cool the electrode unit. A heat resistant metal seal member (66A, 66B) seals an electrode-side heat transfer space (62, 64) formed between the electrode unit and the cooling block. Electrode-side heat transfer gas supply means (94) supplies a heat transfer gas to the electrode-side heat transfer space. Accordingly, a sealing characteristic of the electrode-side heat transfer space does not deteriorate even in a high temperature range such as a temperature higher than 200° C. and, for example, a range from 350° C. to 500° C., and the heat transfer gas does not leak.
Abstract:
A carrier, and an analyzing apparatus including the carrier, the carrier including a sample holder having a guide groove, a sample receiver on which to mount the sample holder, the sample receiver having a guide rail to couple with the guide groove, and a sample elevator to elevate the sample receiver up and down, to receive and discharge the sample holder, wherein the sample elevator includes a driving portion to drive the sample receiver up and down, and a vacuum chamber to maintain a vacuum in an enclosed state around the sample holder.
Abstract:
The invention provides for a scanning electron or ion beam instrument capable of transferring the beam from a high vacuum chamber (8) into a high pressure chamber (5) via aperture (1) and aperture (2). The beam is deflected and scanned by coils (3) generally positioned between apertures (1) and (2). The amplitude of deflection of the beam over a specimen placed inside chamber (5) is substantially larger than the diameter of aperture (1). Leaking gas through aperture (1) is removed via port (7) by appropriate pumping apparatus. The size of aperture (1) is such that the pressure in chamber (6) combined with the supersonic jet and shock waves naturally forming therein do not result in catastrophic electron beam loss in chamber (6). The addition of appropriate detection means result in an instrument characterised by superior performance over prior art by way of better field of view at low magnification, better vacuum system and improved detection and imaging capabilities.
Abstract:
An apparatus for examining a specimen with a beam of charged particles, where charging of the specimen is avoided or reduced by injecting inert gas onto the sample's surface. In order to avoid interactions with the electron optics, various embodiments are disclosed for providing a rotationally symmetrical nozzles and/or electrodes. Additionally, embodiments are disclosed wherein a plurality of gas conduits are arranged in a rotationally symmetrical manner. Alternatively, the conduit is incorporated into an element of the electron optics, such as the magnetic lens. Also, in order to reduce or eliminate interaction of the electrons with the gas molecules, embodiments are disclosed wherein the gas is pulsated, rather than continually injected.
Abstract:
A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate nullSnull to be inspected into an inspection chamber 23-1 maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
Abstract:
A system is provided for imaging, in an ESE microscope or other variable pressure microscope, a single sample at various time intervals during dissolution of the sample in a liquid. The system includes a sample chamber having a sample well. The sample well includes an first fluid port and a second fluid port for forming a dissolution bath in the sample well. In accordance with the system according to the present invention, the sample chamber is placed into the specimen chamber of the ESE microscope and a sample is deposited into the sample well of the sample chamber. The sample is immersed in a liquid which flows through the sample well via the first and second fluid ports during a dissolution cycle. The liquid is then drained from the sample well via one of the first and second fluid ports during a draining cycle, and then, during an imaging cycle, the sample is imaged by the ESE microscope. The dissolution cycle, the draining cycle, and the imaging cycle all occur while the sample well is inside the specimen chamber of the ESE microscope.
Abstract:
An apparatus for examining a specimen with a beam of charged particles, where charging of the specimen is avoided or reduced by injecting inert gas onto the sample's surface. In order to avoid interactions with the electron optics, various embodiments are disclosed for providing a rotationally symmetrical nozzles and/or electrodes. Additionally, embodiments are disclosed wherein a plurality of gas conduits are arranged in a rotationally symmetrical manner. Alternatively, the conduit is incorporated into an element of the electron optics, such as the magnetic lens. Also, in order to reduce or eliminate interaction of the electrons with the gas molecules, embodiments are disclosed wherein the gas is pulsated, rather than continually injected.
Abstract:
The present invention provides apparatus for an imaging system including artificial intelligence algorithmic processing components. Imaging systems may include elements that emit electrons, photons or molecules in different examples. Artificial intelligence algorithms may be used to optimize operating parameters of the imaging systems through use of training databases and feedback of metrology obtained during processing.