公开(公告)号：US20020072203A1

公开(公告)日：2002-06-13

申请号：US09556795

申请日：2000-04-25

Inventor： AKIRA SHIMOKOHBE ,  SEIICHI HATA

IPC: H01L021/36

CPC classification number: B81C1/00682 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C2201/0167

Abstract: A thin film made of an amorphous material having an supercooled liquid phase region is formed on a substrate. Then, the thin film is heated to a temperature within the supercooled liquid phase region and is deformed by its weight, mechanical external force, electrostatic external force or the like, thereby to form a thin film-structure. Thereafter, the thin film-structure is cooled down to room temperature, which results in the prevention of the thin film's deformation.

Abstract translation: 在基板上形成由具有过冷液相区域的无定形材料制成的薄膜。 然后，将薄膜加热至过冷液相区域内的温度，并通过其重量，机械外力，静电外力等变形，从而形成薄膜结构。 此后，将薄膜结构冷却至室温，从而防止薄膜的变形。

公开(公告)号：US5913125A

公开(公告)日：1999-06-15

申请号：US607621

申请日：1996-02-27

Applicant: Donald Walter Brouillette ,  Timothy Charles Krywanczyk ,  Jerome Brett Lasky ,  Rick Lawrence Mohler ,  Wolfgang Otto Rauscher

Inventor： Donald Walter Brouillette ,  Timothy Charles Krywanczyk ,  Jerome Brett Lasky ,  Rick Lawrence Mohler ,  Wolfgang Otto Rauscher

IPC: H01L27/04 ,  B81B3/00 ,  B81C1/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC classification number: B81C1/00666 ,  H01L21/2022 ,  H01L27/1087 ,  H01L29/66181 ,  B81C2201/0167

Abstract: A method of providing a predetermined level and state of stress in a film deposited on a surface of a substrate. In one embodiment, a layer of crystalline material is deposited on a surface of a substrate and then a layer of amorphous material is deposited on the layer of crystalline material. Then, the layers are heated, causing the amorphous material to crystallize. Such crystallization reduces, or even changes the state of, stress in the amorphous layer, which in turn alters the forces applied by the layer to adjacent regions of the substrate. The method may be used for filling a deep-trench capacitor of the type used in trench-storage DRAMs.

Abstract translation: 在沉积在基板的表面上的膜中提供预定水平和应力状态的方法。 在一个实施例中，将一层结晶材料沉积在衬底的表面上，然后将非晶材料层沉积在结晶材料层上。 然后，层被加热，导致无定形材料结晶。 这种结晶减少或者甚至改变了非晶层中的应力状态，这进一步改变了由层施加到衬底的相邻区域的力。 该方法可以用于填充在沟槽存储DRAM中使用的类型的深沟槽电容器。

公开(公告)号：US5753134A

公开(公告)日：1998-05-19

申请号：US347118

申请日：1994-11-23

Applicant: Markus Biebl

Inventor： Markus Biebl

IPC: H01L21/20 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/314 ,  H01L21/02

CPC classification number: G01L9/0042 ,  B81C1/00666 ,  B81C2201/0167

Abstract: For producing a layer having reduced mechanical stresses, the layer is composed of at least two sub-layers that are matched to one another such that stress gradients in the two layers substantially compensate. The method is particularly employable in the manufacture of structures in surface micromechanics.

Abstract translation: 为了产生具有降低的机械应力的层，该层由至少两个彼此匹配的子层组成，使得两层中的应力梯度基本上补偿。 该方法特别适用于制造表面微机械结构。

公开(公告)号：US20190233277A1

公开(公告)日：2019-08-01

申请号：US16379982

申请日：2019-04-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20180346318A1

公开(公告)日：2018-12-06

申请号：US16042303

申请日：2018-07-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H59/00 ,  G06F17/50 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US09919912B2

公开(公告)日：2018-03-20

申请号：US15273772

申请日：2016-09-23

Applicant: Robert Bosch GmbH

Inventor： Frederik Ante ,  Maximilian Amberger

IPC: B64C1/22 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0054 ,  B81B2201/0264 ,  B81B2207/098 ,  B81C1/00309 ,  B81C1/00333 ,  B81C2201/0167 ,  B81C2201/053 ,  H01L2224/27013

Abstract: A microelectronic component arrangement includes a sensor and a carrier. The sensor has a detection surface and a region including contact elements situated at a first distance with respect to one another. The carrier includes a mounting surface, and the sensor is fixed on the carrier by the contact elements situated at a first distance with respect to one another at least regionally. The detection surface is opposite the mounting surface in a manner having a second distance with respect to the mounting surface. The contact elements are wetted by a mechanically stabilizing material, the region including the contact elements is enclosed by the mechanically stabilizing material, and the detection surface is free of the mechanically stabilizing material.

公开(公告)号：US20180072566A1

公开(公告)日：2018-03-15

申请号：US15802789

申请日：2017-11-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: H01P1/10 ,  B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20170158490A1

公开(公告)日：2017-06-08

申请号：US15437727

申请日：2017-02-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  G06F17/50 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20170154800A1

公开(公告)日：2017-06-01

申请号：US15432560

申请日：2017-02-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. Garant ,  Jonathan H. Griffith ,  Brittany L. HEDRICK ,  Edmund J. Sprogis

IPC: H01L21/683 ,  B32B38/10 ,  B32B37/24

CPC classification number: H01L21/6835 ,  B32B37/24 ,  B32B38/10 ,  B32B2037/246 ,  B32B2315/08 ,  B32B2457/14 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L2221/68304 ,  H01L2221/68327

Abstract: A wafer handler with a removable bow compensating layer and methods of manufacture is disclosed. The method includes forming at least one layer of stressed material on a front side of a wafer handler. The method further includes forming another stressed material on a backside of the wafer handler which counter balances the at least one layer of stressed material on the front side of the wafer handler, thereby decreasing an overall bow of the wafer handler.

公开(公告)号：US09656860B2

公开(公告)日：2017-05-23

申请号：US15254828

申请日：2016-09-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Earl Vedere Atnip ,  Raul Enrique Barreto ,  Kelly J. Taylor

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00365 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/0167 ,  B81C2201/0178

Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.