公开(公告)号：US20240063316A1

公开(公告)日：2024-02-22

申请号：US18380519

申请日：2023-10-16

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02963 ,  H01L31/1828 ,  H01L31/1864

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US11876140B2

公开(公告)日：2024-01-16

申请号：US13875739

申请日：2013-05-02

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi

IPC: H01L31/0272 ,  H01L31/073 ,  H01L31/0296 ,  H01L31/0224 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18 ,  C23C14/06

CPC classification number: H01L31/0272 ,  C23C14/0629 ,  H01L21/0248 ,  H01L21/0251 ,  H01L21/0256 ,  H01L21/02422 ,  H01L21/02477 ,  H01L21/02483 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02562 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/022466 ,  H01L31/03925 ,  H01L31/072 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

公开(公告)号：US11784278B2

公开(公告)日：2023-10-10

申请号：US17963061

申请日：2022-10-10

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC classification number: H01L31/1828 ,  H01L31/02966 ,  H01L31/022425 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/50

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US11695085B2

公开(公告)日：2023-07-04

申请号：US16245613

申请日：2019-01-11

Applicant: First Solar, Inc.

Inventor： Upali Jayamaha ,  Michael T. Steele ,  Syed Zafar

IPC: H01L31/0224 ,  H01L31/0749 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/0749 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/50

Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

公开(公告)号：US20220285569A1

公开(公告)日：2022-09-08

申请号：US17751189

申请日：2022-05-23

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Chungho Lee ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/0304 ,  H01L31/05 ,  H01L31/18

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

公开(公告)号：US20220259718A1

公开(公告)日：2022-08-18

申请号：US17738050

申请日：2022-05-06

Applicant: First Solar, Inc.

Inventor： Markus Eberhard Beck ,  Ulrich Alexander Bonne

IPC: C23C14/24

Abstract: An evaporation system comprises an evaporation chamber having an interior enclosed by one or more chamber walls; an evaporation source comprising (i) a source body for containing a feedstock material, and (ii) an evaporation port fluidly coupling the source body with an interior of the evaporation chamber; an insulation material; and a computer-based controller for configuring the insulation material in (i) a first configuration in which the insulation material is disposed snugly around the source body and (ii) a second configuration in which at least a portion of the insulation material is spaced away from the source body and at least a second portion of the insulation material is disposed snugly around the source body; wherein the insulation material does not cover an opening of the evaporation port in the first configuration and the second configuration.

公开(公告)号：US20210280729A1

公开(公告)日：2021-09-09

申请号：US17191089

申请日：2021-03-03

Applicant: First Solar, Inc.

Inventor： James Armour ,  Edmund Elce ,  Albert Mui ,  Allan Ward

IPC: H01L31/05 ,  H01L31/18

Abstract: Photovoltaic devices, and methods of making the same, are described.

公开(公告)号：US20210198783A1

公开(公告)日：2021-07-01

申请号：US17182473

申请日：2021-02-23

Applicant: First Solar, Inc.

Inventor： Markus Eberhard Beck ,  Ulrich Alexander Bonne ,  Robert G. Wendt

IPC: C23C14/26 ,  C23C14/24 ,  C23C14/54 ,  F28D15/00 ,  H01L31/046 ,  C23C16/448 ,  F25B39/00 ,  H01L31/032 ,  H01L31/18 ,  H01L51/00 ,  H01L51/56 ,  C23C16/02 ,  C23C16/28 ,  C23C16/52 ,  F25D17/02

Abstract: In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.

公开(公告)号：US20210143288A1

公开(公告)日：2021-05-13

申请号：US16488275

申请日：2018-02-22

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US20210075219A1

公开(公告)日：2021-03-11

申请号：US17013257

申请日：2020-09-04

Applicant: First Solar, Inc.

Inventor： Dmitry Krasikov

IPC: H02J3/38

Abstract: The efficiency of a photovoltaic device is enhanced by operating the device in a dark bias mode during a dark period, and in a power generation mode during a subsequent illuminated period. The dark period occurs when an insufficient amount of irradiance is received by the photovoltaic device to produce a useful amount of generated power. In the dark bias mode, a forward DC biasing current is applied to the photovoltaic device, and the device consumes a small current. In the power generation mode, the forward bias is not applied to the photovoltaic device, and the photovoltaic device generates a current in a direction opposite to that of the forward biasing current that was applied during the preceding dark period.