公开(公告)号：US06281146B1

公开(公告)日：2001-08-28

申请号：US09396517

申请日：1999-09-15

Applicant: Ying-Lang Wang ,  Hui-Ling Wang ,  Jowei Dun ,  Szu-An Wu

Inventor： Ying-Lang Wang ,  Hui-Ling Wang ,  Jowei Dun ,  Szu-An Wu

IPC: H01L2131

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/5096 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612

Abstract: A method for forming a microelectronic layer. There is first provided a substrate. There is then formed over the substrate the microelectronic layer while employing a plasma enhanced chemical vapor deposition (PECVD) method employing a source material gas and a carrier gas, wherein there is employed a sufficiently low plasma power, a sufficiently low source material gas:carrier gas flow rate ratio and a sufficiently high carrier gas atomic mass such that the microelectronic layer is formed with enhanced film thickness uniformity. The method may be employed for forming ion implant screen layers, such as silicon oxide ion implant screen layers, with enhanced film thickness uniformity.

Abstract translation: 一种形成微电子层的方法。 首先提供基板。 然后在采用使用源材料气体和载气的等离子体增强化学气相沉积（PECVD）方法的基板上形成微电子层，其中采用足够低的等离子体功率，足够低的源材料气体：载体 气体流量比和足够高的载气原子质量，使得微电子层形成为具有增强的膜厚均匀性。 该方法可用于形成具有增强的膜厚度均匀性的离子注入屏幕层，例如氧化硅离子注入屏幕层。

公开(公告)号：US08946083B2

公开(公告)日：2015-02-03

申请号：US13167857

申请日：2011-06-24

Applicant: Shiu-Ko JangJian ,  Ting-Chun Wang ,  Szu-An Wu

Inventor： Shiu-Ko JangJian ,  Ting-Chun Wang ,  Szu-An Wu

IPC: H01L21/44 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L23/4827 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.

Abstract translation: 一种方法包括在电介质层中形成开口，并且在介电层的表面上形成富硅层。 富硅层的一部分延伸到开口中并与电介质层接触。 在富含硅层上方形成含钽层。 进行退火以使含钽层与富硅层反应，从而形成含钽和硅的层。

公开(公告)号：US08847286B2

公开(公告)日：2014-09-30

申请号：US13349221

申请日：2012-01-12

Applicant: Shiu-Ko Jangjian ,  Kei-Wei Chen ,  Szu-An Wu ,  Ying-Lang Wang

Inventor： Shiu-Ko Jangjian ,  Kei-Wei Chen ,  Szu-An Wu ,  Ying-Lang Wang

IPC: H01L27/148

CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/1464

Abstract: An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.

Abstract translation: 图像传感器包括具有相对的第一和第二侧的基板，在基板的第一侧上的多层结构和在基板的第二侧上的感光元件。 光敏元件被配置为接收入射在第一侧并透过多层结构和基板的光。 多层结构包括第一和第二透光层。 第一透光层夹在基板和第二透光层之间。 第一透光层的折射率为基板折射率的60％至90％。 第二透光层的折射率低于第一透光层的折射率，为基板的折射率的40％〜70％。

公开(公告)号：US20130075831A1

公开(公告)日：2013-03-28

申请号：US13244355

申请日：2011-09-24

Applicant: Shiu-Ko JangJian ,  Szu-An Wu ,  Ying-Lang Wang ,  Chi-Wen Liu

Inventor： Shiu-Ko JangJian ,  Szu-An Wu ,  Ying-Lang Wang ,  Chi-Wen Liu

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

Abstract: A metal gate stack having a TiAlN blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate; a work function layer disposed over the gate dielectric layer; a multi-function wetting/blocking layer disposed over the work function layer, wherein the multi-function wetting/blocking layer is a titanium aluminum nitride layer; and a conductive layer disposed over the multi-function wetting/blocking layer.

Abstract translation: 公开了具有TiAlN阻挡/润湿层的金属栅极堆叠及其制造方法。 在一个示例中，集成电路器件包括设置在半导体衬底上的半导体衬底和栅极堆叠。 栅极堆叠包括设置在半导体衬底上的栅介质层; 设置在所述栅极介电层上的功函数层; 设置在所述功函数层上的多功能润湿/阻挡层，其中所述多功能润湿/阻挡层是氮化铝钛层; 以及设置在多功能润湿/阻挡层上的导电层。

公开(公告)号：US20070026653A1

公开(公告)日：2007-02-01

申请号：US11189613

申请日：2005-07-26

Applicant: Po-Hsiung Leu ,  Shu-Tine Yang ,  Ying-Hsiu Tsai ,  Shin-Yeu Tsai ,  Tsang-Yu Liu ,  Ming-Te Chen ,  Szu-An Wu ,  Harry Chuang

Inventor： Po-Hsiung Leu ,  Shu-Tine Yang ,  Ying-Hsiu Tsai ,  Shin-Yeu Tsai ,  Tsang-Yu Liu ,  Ming-Te Chen ,  Szu-An Wu ,  Harry Chuang

IPC: H01L21/22

CPC classification number: H01L21/31629 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76822 ,  H01L21/76829

Abstract: A method for capping over a doped dielectric. The method comprises providing a substrate and depositing a doped dielectric layer on the substrate from a gas mixture. The gas mixture comprises a silicon source gas, a dopant gas and an oxygen source gas. A cap layer is in-situ deposited on the doped dielectric layer from the gas mixture substantially in absence of the dopant gas.

Abstract translation: 一种用于覆盖掺杂电介质的方法。 该方法包括提供衬底并从气体混合物在衬底上沉积掺杂的电介质层。 气体混合物包括硅源气体，掺杂剂气体和氧源气体。 基本上在没有掺杂气体的情况下，从气体混合物原位沉积覆盖层在掺杂介电层上。

公开(公告)号：US20050009367A1

公开(公告)日：2005-01-13

申请号：US10615744

申请日：2003-07-09

Applicant: Yi-Lung Cheng ,  Ming-Hwa Yoo ,  Szu-An Wu ,  Ying-Lang Wang ,  Pei-Fen Chou

Inventor： Yi-Lung Cheng ,  Ming-Hwa Yoo ,  Szu-An Wu ,  Ying-Lang Wang ,  Pei-Fen Chou

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/76 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76837

Abstract: A method of forming an FSG film comprising the following steps. A structure is provided. An FSG film is formed over the structure by an HDP-CVD process under the following conditions: no Argon (Ar)—side sputter; SiF4 flow: from about 53 to 63 sccm; an N2 flow: from about 25 to 35 sccm; and an RF power to provide a uniform plasma density.

Abstract translation: 一种形成FSG膜的方法，包括以下步骤。 提供了一种结构。 在以下条件下通过HDP-CVD工艺在该结构上形成FSG膜：无氩（Ar）侧溅射; SiF4流量：约53至63sccm; N2流量：约25至35sccm; 和RF功率以提供均匀的等离子体密度。

公开(公告)号：US06815072B2

公开(公告)日：2004-11-09

申请号：US10256714

申请日：2002-09-27

Applicant: Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

Inventor： Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

IPC: B05C1100

CPC classification number: H01J37/32477 ,  C23C16/4404 ,  Y10T428/2495 ,  Y10T428/265

Abstract: A method for reducing contaminants in a processing chamber 10 having chamber plasma processing region components comprising the following steps. The chamber plasma processing region components are cleaned. The chamber is then seasoned as follows. A first USG layer is formed over the chamber plasma processing region components. An FSG layer is formed over the first USG layer. A second USG layer is formed over the FSG layer. Wherein the USG, FSG, and second USG layers comprise a UFU season film. A UFU season film coating the chamber plasma processing region components of a processing chamber comprises: an inner USG layer over the chamber plasma processing region components; an FSG layer over the inner USG layer; and an outer USG layer over the FSG layer.

公开(公告)号：US06815007B1

公开(公告)日：2004-11-09

申请号：US10086258

申请日：2002-03-04

Applicant: Ming-Hwa Yoo ,  Shih-Chi Lin ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

Inventor： Ming-Hwa Yoo ,  Shih-Chi Lin ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

IPC: C23C1622

CPC classification number: H01J37/32862 ,  C23C16/308 ,  C23C16/401 ,  C23C16/4404 ,  H01J2237/022

Abstract: A method for reducing contaminants in a processing chamber having an inner wall by seasoning the walls. The method comprising the following steps. A first USG film is formed over the processing chamber inner wall. An FSG film is formed over the first USG film. A second USG film is formed over the FSG film. A nitrogen-containing film is formed over the second USG film wherein the first USG film, the FSG film, the second USG film and the nitrogen-containing film comprise a UFUN season film.

公开(公告)号：US6060374A

公开(公告)日：2000-05-09

申请号：US090614

申请日：1998-06-04

Applicant: Cheng-Kun Lin ,  Szu-An Wu

Inventor： Cheng-Kun Lin ,  Szu-An Wu

IPC: H01L21/425

CPC classification number: H01L21/26506 ,  H01L21/28211 ,  H01L22/12

Abstract: Measurement of contaminating nitrogen during silicon ion implantation has been achieved by including a silicon wafer as a monitor in the implantation chamber. After silicon ion implantation, the monitor is subjected to a rapid thermal oxidation (about 1,100.degree. C. for one minute) and the thickness of the resulting grown oxide layer is measured. The thinner the oxide layer (relative to an oxide layer grown on pure silicon) the greater the degree of nitrogen contamination. For example, a reduction in oxide thickness of about 30 Angstroms corresponds to a nitrogen dosage of about 10.sup.13 atoms/sq. cm. By measuring total ion dosage during implantation and then subtracting the measured nitrogen dosage, the corrected silicon dosage may also be computed.

Abstract translation: 硅离子注入期间污染氮的测量已经通过将硅晶片作为监测器包括在注入室来实现。 在硅离子注入之后，将监测器进行快速热氧化（约1100℃1分钟），并测量所得生长的氧化物层的厚度。 氧化物层（相对于在纯硅上生长的氧化物层）越薄，氮污染程度越大。 例如，约30埃的氧化物厚度的减小对应于大约1013个原子/平方的氮剂量。 厘米。 通过测量植入期间的总离子剂量，然后减去测量的氮剂量，也可以计算校正的硅剂量。

公开(公告)号：US20130181258A1

公开(公告)日：2013-07-18

申请号：US13349221

申请日：2012-01-12

Applicant: Shiu-Ko JangJian ,  Kei-Wei CHEN ,  Szu-An WU ,  Ying-Lang WANG

Inventor： Shiu-Ko JangJian ,  Kei-Wei CHEN ,  Szu-An WU ,  Ying-Lang WANG

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/1464

Abstract: An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.

Abstract translation: 图像传感器包括具有相对的第一和第二侧的基板，在基板的第一侧上的多层结构和在基板的第二侧上的感光元件。 光敏元件被配置为接收入射在第一侧并透过多层结构和基板的光。 该多层结构包括第一和第二透光层。 第一透光层夹在基板和第二透光层之间。 第一透光层的折射率为基板折射率的60％至90％。 第二透光层的折射率低于第一透光层的折射率，为基板的折射率的40％〜70％。