公开(公告)号：US20150371851A1

公开(公告)日：2015-12-24

申请号：US14655404

申请日：2014-01-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Kwangduk Douglas LEE ,  Wonseok LEE ,  Martin Jay SEAMONS

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/0332 ,  C23C16/26 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3081 ,  H01L21/31144

Abstract: Methods for forming an amorphous carbon layer with desired film mechanical strength low film stress as well as optical film properties are provided. In one embodiment, a method of forming an amorphous carbon layer includes forming a plasma of a deposition gas mixture including a hydrocarbon gas supplied in a processing chamber by application of a RF source power, applying a low frequency RF bias power and a high frequency RF bias power to a first electrode disposed in the processing chamber, controlling a power ratio of the high frequency to the low frequency RF bias power, and forming an amorphous carbon layer on a substrate disposed in the processing chamber.

Abstract translation: 提供了形成具有期望的膜机械强度低膜应力的非晶碳层以及光学膜性质的方法。 在一个实施方案中，形成无定形碳层的方法包括通过施加RF源功率，施加低频RF偏置功率和施加高频RF偏压功率来形成包括在处理室中供应的烃气体的沉积气体混合物的等离子体 将偏置功率设置在处理室中的第一电极，控制高频与低频RF偏置功率的功率比，以及在设置在处理室中的衬底上形成无定形碳层。

公开(公告)号：US20150228463A1

公开(公告)日：2015-08-13

申请号：US14619138

申请日：2015-02-11

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Abhijit Basu MALLICK ,  Bok Hoen KIM ,  Mukund SRINIVASAN

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32862 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32357

Abstract: Methods for cleaning a processing chamber to remove amorphous carbon containing residuals from the processing chamber are provided. The cleaning process utilizes a low frequency RF bias power during the cleaning process. In one embodiment, a method of cleaning a processing chamber includes supplying a cleaning gas mixture into a processing chamber, applying a RF bias power of about 2 MHz or lower to a substrate support assembly disposed in the processing chamber to form a plasma in the cleaning gas mixture in the processing chamber, and removing deposition residuals from the processing chamber.

Abstract translation: 提供了用于清洁处理室以从处理室去除含有残留物的无定形碳的方法。 清洁过程在清洁过程中利用低频RF偏置功率。 在一个实施例中，清洁处理室的方法包括将清洁气体混合物供应到处理室中，向设置在处理室中的基板支撑组件施加约2MHz或更低的RF偏置功率以在清洁中形成等离子体 处理室中的气体混合物，并且从处理室去除沉积残余物。

公开(公告)号：US20140273461A1

公开(公告)日：2014-09-18

申请号：US14201700

申请日：2014-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE ,  Ludovic GODET

IPC: H01L21/314 ,  H01L21/311

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/56 ,  H01J37/32412 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0332 ,  H01L21/31155

Abstract: Methods for forming a hydrogen implanted amorphous carbon layer with desired film mechanical strength as well as optical film properties are provided. In one embodiment, a method of a hydrogen implanted amorphous carbon layer includes providing a substrate having a material layer disposed thereon, forming an amorphous carbon layer on the material layer, and ion implanting hydrogen ions from a hydrogen containing gas into the amorphous carbon layer to form a hydrogen implanted amorphous carbon layer.

Abstract translation: 提供了形成具有期望膜机械强度的氢注入非晶碳层以及光学膜性质的方法。 在一个实施例中，氢注入非晶碳层的方法包括提供其上设置有材料层的基板，在所述材料层上形成无定形碳层，以及将氢离子从含氢气体注入到所述非晶碳层中至 形成氢注入非晶碳层。

公开(公告)号：US20220333245A1

公开(公告)日：2022-10-20

申请号：US17235758

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Xiaopu LI ,  Kallol BERA ,  Jay D. PINSON, II ,  Martin Jay SEAMONS

IPC: C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  H01L21/02

Abstract: Aspects generally relate to systems, methods, and apparatus for applying a bias voltage to an ion blocker plate during substrate processing operations. In one aspect, the bias voltage is a negative direct current (DC) voltage. In one aspect, the bias voltage is a radio frequency (RF) voltage having a bias frequency of 2 MHz or less. In one implementation, a system for processing substrates includes a processing chamber. The processing chamber includes a processing volume, a pedestal positioned in the processing volume, and a lid assembly. The system includes a power line coupled to a faceplate of the lid assembly to supply a radio frequency (RF) power to the faceplate. The system includes a bias voltage line coupled to an ion blocker plate of the lid assembly to supply a bias voltage to the ion blocker plate.

公开(公告)号：US20210317580A1

公开(公告)日：2021-10-14

申请号：US16848784

申请日：2020-04-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Shi YOU ,  He REN ,  Naomi YOSHIDA ,  Nikolaos BEKIARIS ,  Mehul NAIK ,  Martin Jay SEAMONS ,  Jingmei LIANG ,  Mei-Yee SHEK

IPC: C23C16/56 ,  H01L21/768

Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material

公开(公告)号：US20160133443A1

公开(公告)日：2016-05-12

申请号：US15000857

申请日：2016-01-19

Applicant: Applied Materials, Inc.

Inventor： Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32853 ,  B08B7/0035 ,  G03F7/427 ,  H01L21/02041 ,  H01L21/31116

Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

Abstract translation: 本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。 在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。 在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。 除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。 在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。 在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。 聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。

公开(公告)号：US20150136325A1

公开(公告)日：2015-05-21

申请号：US14539914

申请日：2014-11-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Ganesh BALASUBRAMANIAN ,  Thuy BRICHER ,  Jay D. PINSON, II ,  Hiroji HANAWA ,  Juan Carlos ROCHA-ALVAREZ ,  Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Bok Hoen KIM ,  Sungwon HA

IPC: H01J37/32 ,  C23C16/513 ,  C23C16/509 ,  H01L21/67

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract translation: 用于修改沉积在等离子体处理室中的薄膜的均匀性图案的系统包括耦合到等离子体处理室的放电电极上的多个点的单个射频（RF）电源。 选择多个耦合点的定位，多个耦合点之间的功率分布或两者的组合以至少部分地补偿由腔室产生的薄膜的一致的不均匀图案。 多个耦合点之间的功率分布可以由在多个耦合点中的每个耦合点处施加的RF功率之间的适当的RF相位差产生。