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    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS
    13.
    发明申请
    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS 有权

    公开(公告)号：US20210351031A1

    公开(公告)日：2021-11-11

    申请号：US17370263

    申请日：2021-07-08

    Applicant: ASM IP HOLDING B.V.

    Inventor： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC: H01L21/02 ,  C23C16/40 ,  H01L21/32 ,  C23C16/455

    Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    Methods for forming silicon nitride thin films
    16.
    发明授权
    Methods for forming silicon nitride thin films 有权

    公开(公告)号：US10573511B2

    公开(公告)日：2020-02-25

    申请号：US13798285

    申请日：2013-03-13

    Applicant: ASM IP HOLDING B.V.

    Inventor： Antti Niskanen ,  Suvi Haukka ,  Jaakko Anttila

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

    Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS
    18.
    发明申请
    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS 审中-公开

    公开(公告)号：US20170323776A1

    公开(公告)日：2017-11-09

    申请号：US15581726

    申请日：2017-04-28

    Applicant: ASM IP HOLDING B.V.

    Inventor： Elina Färm ,  Hidemi Suemori ,  Raija Matero ,  Antti Niskanen ,  Suvi P. Haukka

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

    CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/32

    Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    METHODS AND SYSTEMS FOR PRECURSOR LEVEL MONITORING
    20.
    发明申请
    METHODS AND SYSTEMS FOR PRECURSOR LEVEL MONITORING 有权

    公开(公告)号：US20240425985A1

    公开(公告)日：2024-12-26

    申请号：US18747162

    申请日：2024-06-18

    Applicant: ASM IP Holding B.V.

    Inventor： Antti Niskanen ,  Vincent Vandalon

    IPC: C23C16/455 ,  C23C16/52

    Abstract: Methods and related systems, precursor vessels, data processing systems, computer program products, and computer-readable media that can be employed for determining an amount of precursor in a precursor vessel. Embodiments of presently described methods can comprise carrying out an analyzing sequence, by a processor, of at least the pressure as a function of time, thereby quantifying a remaining amount of the precursor.

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