SUBSTRATE SUSCEPTOR USING EDGE PURGING

    公开(公告)号:US20220380895A1

    公开(公告)日:2022-12-01

    申请号:US17816052

    申请日:2022-07-29

    Abstract: A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

    SEMICONDUCTOR PROCESSING DEVICE
    13.
    发明申请

    公开(公告)号:US20210087679A1

    公开(公告)日:2021-03-25

    申请号:US17014820

    申请日:2020-09-08

    Abstract: A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

    REACTANT VAPORIZER AND RELATED SYSTEMS AND METHODS

    公开(公告)号:US20200340109A1

    公开(公告)日:2020-10-29

    申请号:US16926493

    申请日:2020-07-10

    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

    REACTOR MANIFOLDS
    15.
    发明申请
    REACTOR MANIFOLDS 审中-公开

    公开(公告)号:US20200299836A1

    公开(公告)日:2020-09-24

    申请号:US16813527

    申请日:2020-03-09

    Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

    SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF

    公开(公告)号:US20200056286A1

    公开(公告)日:2020-02-20

    申请号:US16598768

    申请日:2019-10-10

    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

    SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF
    17.
    发明申请
    SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF 审中-公开
    半导体加工反应器及其组件

    公开(公告)号:US20160289828A1

    公开(公告)日:2016-10-06

    申请号:US15182504

    申请日:2016-06-14

    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

    Abstract translation: 一种具有壳体的反应器,其包围可操作地连接到反应室和排气组件的气体输送系统。 气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。 气体输送系统还包括用于接收至少一种处理气体的混合器。 混合器可操作地连接到被配置成扩散工艺气体的扩散器。 扩散器直接附接到反应室的上表面,从而在它们之间形成扩散体。 扩散器包括至少一个分配表面,该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。

    Showerhead assembly for distributing a gas within a reaction chamber

    公开(公告)号:US12276023B2

    公开(公告)日:2025-04-15

    申请号:US16042791

    申请日:2018-07-23

    Abstract: A showerhead assembly for distributing a gas within a reaction chamber is disclosed. The showerhead assembly may comprise: a chamber formed within the showerhead assembly and a gas distribution assembly adjacent to the chamber, wherein the gas distribution assembly comprises: a first gas distribution plate comprising a top surface and a bottom surface; and a second gas distribution plate comprising a top surface and a bottom surface, the second gas distribution plate being disposed over the top surface of the first gas distribution plate. The gas distribution assembly may further comprise: one or more heating structures disposed between the first gas distribution plate and the second gas distribution plate; and a plurality of apertures extending from the bottom surface of the first distribution plate to the top surface of the second gas distribution plate. Methods for controlling the temperature uniformity of a showerhead assembly utilized for distribution gas with a reaction chamber are also disclosed.

    Channeled lift pin
    20.
    发明授权

    公开(公告)号:US12033885B2

    公开(公告)日:2024-07-09

    申请号:US17140661

    申请日:2021-01-04

    CPC classification number: H01L21/68742 H01L21/6838

    Abstract: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.

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