Wideband Power Efficient High Transmission Power Radio Frequency (RF) Transmitter
    11.
    发明申请
    Wideband Power Efficient High Transmission Power Radio Frequency (RF) Transmitter 有权
    宽带功率有效的高功率射频(RF)发射机

    公开(公告)号:US20130084816A1

    公开(公告)日:2013-04-04

    申请号:US13249741

    申请日:2011-09-30

    CPC classification number: H04B1/0475 H03M1/66

    Abstract: Embodiments provide transmitter topologies that improve the power efficiency and bandwidth of RF transmitters for high transmission power applications. In an embodiment, the common-emitter/source PA of conventional topologies is replaced with a current-input common-base/gate PA, which is stacked on top on an open-collector/drain current-output transmitter. The common-base/gate PA protects the output of the transmitter from large output voltage swings. The low input impedance of the common-base/gate PA makes the PA less susceptible to frequency roll-off, even in the presence of large parasitic capacitance produced by the transmitter. At the same time, the low input impedance of the common-base/gate PA reduces the voltage swing at the transmitter output and prevents the transmitter output from being compressed or modulated. In an embodiment, the DC output current of the transmitter is reused to bias the PA, which results in power savings compared to conventional transmitter topologies.

    Abstract translation: 实施例提供了发射机拓扑,其提高用于高传输功率应用的RF发射机的功率效率和带宽。 在一个实施例中,常规拓扑的共发射极/源极PA被置于集电极/漏极电流输出发射器顶部堆叠的电流输入公共基极/栅极PA替代。 公共端/门PA保护发射机的输出免受大的输出电压摆幅。 公共基极/门极PA的低输入阻抗使得即使在发射机产生大的寄生电容的情况下,PA也不易于频率滚降。 同时,公共基极/门极PA的低输入阻抗降低了发射机输出端的电压摆幅,并防止发射机输出被压缩或调制。 在一个实施例中,与常规发射机拓扑相比,发射机的DC输出电流被重新用于偏置PA,这导致功率节省。

    Thermal enhanced high density flip chip package
    13.
    发明授权
    Thermal enhanced high density flip chip package 有权
    热增强高密度倒装芯片封装

    公开(公告)号:US09153530B2

    公开(公告)日:2015-10-06

    申请号:US13162064

    申请日:2011-06-16

    Abstract: Systems and methods according to embodiments of the invention enable flip chip packaging using high density routing while minimizing the thickness and layer count of the flip chip package. By using a photoresist layer to create very fine traces on a metallic base layer, embodiments of the present invention combine advantages of leadframe substrates and laminate substrates by supporting high-density routing while minimizing layer count and manufacturing cost. Additionally, the use of raised metallic pads in a routing layer enables embodiments of the present invention to include highly compact traces that pass over IC die bond pad connection sites without directly coupling to these bond IC die bond pad connection sites. Further, embodiments of the present invention can support multiple thin routing layers without the need for organic (e.g., laminate) material separating these routing layers.

    Abstract translation: 根据本发明的实施例的系统和方法使得能够使倒装芯片封装的厚度和层数最小化的高密度布线的倒装芯片封装。 通过使用光致抗蚀剂层在金属基底层上产生非常精细的迹线,本发明的实施例通过支持高密度布线同时最小化层数和制造成本来结合引线框架基板和层叠基板的优点。 此外,在布线层中使用凸起的金属焊盘使得本发明的实施例能够包括通过IC管芯接合焊盘连接位置的非常紧凑的迹线,而不直接耦合到这些接合IC管芯接合焊盘连接位置。 此外,本发明的实施例可以支持多个薄路由层,而不需要分离这些路由层的有机(例如,层叠)材料。

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