公开(公告)号：US20220376056A1

公开(公告)日：2022-11-24

申请号：US17882193

申请日：2022-08-05

Applicant: FLOSFIA INC.

Inventor： Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Hiroyuki ANDO ,  Hideki TAKEHARA ,  Takashi SHINOHE ,  Mitsuru OKIGAWA

IPC: H01L29/24 ,  H01L29/872 ,  H01L29/47 ,  H01L29/739 ,  H01L29/786 ,  H01L23/13

Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the conductive substrate having a larger area than the oxide semiconductor film.

公开(公告)号：US20220223682A1

公开(公告)日：2022-07-14

申请号：US17711565

申请日：2022-04-01

Applicant: FLOSFIA INC.

Inventor： Osamu IMAFUJI ,  Yusuke MATSUBARA

IPC: H01L29/06 ,  H01L29/04 ,  H01L29/24 ,  H01L29/786

Abstract: Provided is a semiconductor element including; a semiconductor film; and a porous layer disposed on a first surface side of the semiconductor film or a second surface side opposite from the first surface side, a porosity of the porous layer being no more than 10%.

公开(公告)号：US20220140145A1

公开(公告)日：2022-05-05

申请号：US17575838

申请日：2022-01-14

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Yasushi HIGUCHI ,  Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Takashi SHINOHE

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/47 ,  H01L29/24 ,  H01L29/872 ,  H01L29/04 ,  H01L29/78

Abstract: Provided are a multilayer structure in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented and a semiconductor device using the multilayer structure, the multilayer structure and the semiconductor device that are particularly useful for power devices. A multilayer structure in which an insulator film is arranged on a part of a semiconductor film, wherein the semiconductor film has a corundum structure and contains a crystalline oxide semiconductor containing one or two or more metals selected from groups 9 and 13 of the periodic table, and wherein the insulator film has a taper angle of 20° or less.