公开(公告)号：US20220384663A1

公开(公告)日：2022-12-01

申请号：US17882148

申请日：2022-08-05

Applicant: FLOSFIA INC.

Inventor： Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Hiroyuki ANDO ,  Hideki TAKEHARA ,  Takashi SHINOHE ,  Mitsuru OKIGAWA

IPC: H01L29/872 ,  H01L29/24

Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.

公开(公告)号：US20220376056A1

公开(公告)日：2022-11-24

申请号：US17882193

申请日：2022-08-05

Applicant: FLOSFIA INC.

Inventor： Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Hiroyuki ANDO ,  Hideki TAKEHARA ,  Takashi SHINOHE ,  Mitsuru OKIGAWA

IPC: H01L29/24 ,  H01L29/872 ,  H01L29/47 ,  H01L29/739 ,  H01L29/786 ,  H01L23/13

Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the conductive substrate having a larger area than the oxide semiconductor film.