公开(公告)号：US20190221685A1

公开(公告)日：2019-07-18

申请号：US16363499

申请日：2019-03-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US20160126395A1

公开(公告)日：2016-05-05

申请号：US14531425

申请日：2014-11-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract translation: 光电器件包括衬底结构和至少一个含硒层，例如CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSeTe层。 该方法还可以包括控制含Se层的厚度范围。

公开(公告)号：US20140261685A1

公开(公告)日：2014-09-18

申请号：US14209094

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Feng Liao ,  Jigish Trivedi ,  Zhibo Zhao ,  Rick C. Powell ,  Long Cheng ,  Markus Gloeckler ,  Benyamin Buller ,  Igor Sankin ,  Jeremy Brewer

IPC: H01L31/0352 ,  H01L31/0203 ,  H01L31/0296

CPC classification number: H01L31/035272 ,  H01L31/0203 ,  H01L31/0296 ,  H01L31/1828 ,  Y02E10/543

Abstract: Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdSxTe1-x (where 0≦x≦1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 μm and about 14 μm and methods for forming the same.

Abstract translation: 实施例包括光伏器件，其包括至少一个吸收层，例如 CdTe和/或CdSxTe1-x（其中0＆nlE; x＆nlE; 1），其平均晶粒尺寸与厚度之比大于2至约50，平均晶粒尺寸在约4μm至约14μm之间， 相同。

公开(公告)号：US20250120219A1

公开(公告)日：2025-04-10

申请号：US18914841

申请日：2024-10-14

Applicant: First Solar, Inc.

Inventor： Le Chen ,  Sachit Grover ,  Jason Kephart ,  Sergei Kniajanski ,  Chungho Lee ,  Xiaoping Li ,  Feng Liao ,  Dingyuan Lu ,  Rajni Mallick ,  Wenming Wang ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0216 ,  H01L31/0296 ,  H01L31/073

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

公开(公告)号：US11450778B2

公开(公告)日：2022-09-20

申请号：US16305455

申请日：2017-05-31

Applicant: First Solar, Inc.

Inventor： Kenneth Ring ,  William H. Huber ,  Hongying Peng ,  Markus Gloeckler ,  Gopal Mor ,  Feng Liao ,  Zhibo Zhao ,  Andrei Los

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.

公开(公告)号：US10461207B2

公开(公告)日：2019-10-29

申请号：US14602340

申请日：2015-01-22

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20160126396A1

公开(公告)日：2016-05-05

申请号：US14602340

申请日：2015-01-22

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0224

CPC classification number: H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20140261686A1

公开(公告)日：2014-09-18

申请号：US14209206

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Daniel Damjanovic ,  Feng Liao ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/0272

CPC classification number: H01L31/0296 ,  H01L31/022483 ,  H01L31/0272 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: Photovoltaic devices with a zinc oxide layer replacing all or part of at least one of a window layer and a buffer layer, and methods of making the devices.

Abstract translation: 具有替代窗口层和缓冲层中的至少一个的全部或部分的氧化锌层的光伏器件以及制造器件的方法。

公开(公告)号：US20140216535A1

公开(公告)日：2014-08-07

申请号：US14170989

申请日：2014-02-03

Applicant: FIRST SOLAR, INC.

Inventor： Daniel Damjanovic ,  Jing Guo ,  Sreenivas Jayaraman ,  Oleh P. Karpenko ,  Feng Liao ,  Chong Lim ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/065 ,  H01L31/0296 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/065 ,  H01L31/02167 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.

Abstract translation: 一种光伏器件，包括在窗口层和吸收层之间的保护层，该保护层在器件激活步骤期间抑制了窗口层在吸收层中的溶解/混合，以及形成这种光伏器件的方法。

公开(公告)号：US20240030367A1

公开(公告)日：2024-01-25

申请号：US18372567

申请日：2023-09-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.