公开(公告)号：US12021163B2

公开(公告)日：2024-06-25

申请号：US17418532

申请日：2019-12-23

Applicant: First Solar, Inc.

Inventor： Rick Powell ,  Jongwoo Choi

IPC: H01L31/044 ,  H01L31/073

CPC classification number: H01L31/073

Abstract: A photovoltaic device includes an electron blocking layer (EBL) and an absorber layer. The EBL is positioned between the absorber layer and a back contact layer. A material of the EBL is a cadmium zinc telluride Cd(1-y)Zn(y)Te, and a material of the absorber layer is a cadmium telluride selenide CdTe(1-x)Se(x) producing a lattice mismatch between the materials of the EBL and between the materials of the absorber of less than about two tenths of a percent when x˜y and has a value less than about 0.4.

公开(公告)号：US20230082682A1

公开(公告)日：2023-03-16

申请号：US17801093

申请日：2021-02-19

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/58 ,  C23C14/50 ,  C23C14/22 ,  H01G9/20 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US20210301387A1

公开(公告)日：2021-09-30

申请号：US17267189

申请日：2019-08-09

Applicant: First Solar, Inc.

Inventor： John Barden ,  Rick Powell ,  Aaron Roggelin ,  Nirav Vora

IPC: C23C14/22 ,  C23C14/26 ,  C23C14/56 ,  C23C16/448

Abstract: Distributor assemblies for vapor transport deposition systems, and methods of conducting vapor transport deposition, are described.

公开(公告)号：US10861994B2

公开(公告)日：2020-12-08

申请号：US16435838

申请日：2019-06-10

Applicant: First Solar, Inc.

Inventor： Anke Abken ,  Markus Gloeckler ,  Roger Green ,  Akhlesh Gupta ,  Upali Jayamaha ,  Peter Meyers ,  Rick Powell

IPC: H01L31/073 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0296

Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.

公开(公告)号：US10461207B2

公开(公告)日：2019-10-29

申请号：US14602340

申请日：2015-01-22

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20160126396A1

公开(公告)日：2016-05-05

申请号：US14602340

申请日：2015-01-22

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0224

CPC classification number: H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20240088319A1

公开(公告)日：2024-03-14

申请号：US18507816

申请日：2023-11-13

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US11817516B2

公开(公告)日：2023-11-14

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20200058818A1

公开(公告)日：2020-02-20

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20190296180A1

公开(公告)日：2019-09-26

申请号：US16435838

申请日：2019-06-10

Applicant: First Solar, Inc.

Inventor： Anke Abken ,  Markus Gloeckler ,  Roger Green ,  Akhlesh Gupta ,  Upali Jayamaha ,  Peter Meyers ,  Rick Powell

IPC: H01L31/18 ,  H01L31/073 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0224

Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.