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    Dual beam system
    11.
    发明授权
    Dual beam system 有权
    双光束系统

    公开(公告)号：US07601976B2

    公开(公告)日：2009-10-13

    申请号：US11641540

    申请日：2006-12-18

    Applicant: Raymond Hill ,  Colin August Sanford ,  Lawrence Scipioni ,  Mark DiManna ,  Michael Tanguay

    Inventor： Raymond Hill ,  Colin August Sanford ,  Lawrence Scipioni ,  Mark DiManna ,  Michael Tanguay

    IPC: H01J37/30 ,  H01L21/266 ,  H01L21/263

    CPC classification number: H01J37/141 ,  H01J37/026 ,  H01J37/08 ,  H01J2237/0042 ,  H01J2237/0805 ,  H01J2237/1405 ,  H01J2237/28 ,  H01J2237/317 ,  H01J2237/31749

    Abstract: A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.

    Abstract translation: 双光束系统包括离子束系统和具有磁性物镜的扫描电子显微镜。 离子束系统适于在存在来自SEM物镜的磁场的情况下最佳地操作，使得物镜在离子束操作期间不被关闭。 可选的二次粒子检测器和可选的电荷中和泛喷枪适于在存在磁场的情况下操作。 磁性物镜被设计成具有恒定的热信号，不管产生的磁场的强度如何，使得当磁场改变时，系统不需要时间稳定。

    Repairing defects
    18.
    发明授权
    Repairing defects 有权
    修复缺陷

    公开(公告)号：US08334701B2

    公开(公告)日：2012-12-18

    申请号：US12549759

    申请日：2009-08-28

    Applicant: Rainer Knippelmeyer ,  Christoph Riedesel ,  John Morgan ,  Lawrence Scipioni

    Inventor： Rainer Knippelmeyer ,  Christoph Riedesel ,  John Morgan ,  Lawrence Scipioni

    IPC: G01R31/02

    CPC classification number: H01L21/76892 ,  H01L22/20 ,  H05K3/0017 ,  H05K3/225 ,  H05K2203/09 ,  H05K2203/1344 ,  H05K2203/173

    Abstract: Methods and systems for defect repair are disclosed. The methods include: (a) identifying a defect causing an absence of an electrical connection between a first circuit element and a second circuit element, the first and second circuit elements being positioned in or on a substrate and the defect being positioned in the substrate; (b) removing a portion of the substrate to expose the defect, and depositing a conductive material to electrically connect the first and second circuit elements; and (c) verifying that the defect caused the absence of an electrical connection between the first and second circuit elements.

    Abstract translation: 公开了用于缺陷修复的方法和系统。 所述方法包括：（a）识别导致在第一电路元件和第二电路元件之间不存在电连接的缺陷，所述第一和第二电路元件位于基板中或基板上，并且所述缺陷位于所述基板中; （b）去除所述衬底的一部分以暴露所述缺陷，以及沉积导电材料以电连接所述第一和第二电路元件; 和（c）验证该缺陷导致在第一和第二电路元件之间不存在电连接。

    REPAIRING DEFECTS
    20.
    发明申请
    REPAIRING DEFECTS 有权
    修复缺陷

    公开(公告)号：US20100052697A1

    公开(公告)日：2010-03-04

    申请号：US12549759

    申请日：2009-08-28

    Applicant: Rainer Knippelmeyer ,  Christoph Riedesel ,  John Morgan ,  Lawrence Scipioni

    Inventor： Rainer Knippelmeyer ,  Christoph Riedesel ,  John Morgan ,  Lawrence Scipioni

    IPC: G01R31/02

    CPC classification number: H01L21/76892 ,  H01L22/20 ,  H05K3/0017 ,  H05K3/225 ,  H05K2203/09 ,  H05K2203/1344 ,  H05K2203/173

    Abstract: Methods and systems for defect repair are disclosed. The methods include: (a) identifying a defect causing an absence of an electrical connection between a first circuit element and a second circuit element, the first and second circuit elements being positioned in or on a substrate and the defect being positioned in the substrate; (b) removing a portion of the substrate to expose the defect, and depositing a conductive material to electrically connect the first and second circuit elements; and (c) verifying that the defect caused the absence of an electrical connection between the first and second circuit elements.

    Abstract translation: 公开了用于缺陷修复的方法和系统。 所述方法包括：（a）识别导致在第一电路元件和第二电路元件之间不存在电连接的缺陷，所述第一和第二电路元件位于基板中或基板上，并且所述缺陷位于所述基板中; （b）去除所述衬底的一部分以暴露所述缺陷，以及沉积导电材料以电连接所述第一和第二电路元件; 和（c）验证该缺陷导致在第一和第二电路元件之间不存在电连接。

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