公开(公告)号：US20230352294A1

公开(公告)日：2023-11-02

申请号：US18336552

申请日：2023-06-16

Applicant: Beijing E-Town Semiconductor Technology Co., Ltd. ,  Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Rolf Bremensdorfer ,  Dave Camm ,  Joseph Cibere ,  Dieter Hezler ,  Shawming Ma ,  Yun Yang

IPC: H01J61/86 ,  H01J61/073 ,  H05H1/48 ,  H01J61/52 ,  H01J61/28

CPC classification number: H01J61/86 ,  H01J61/0732 ,  H05H1/48 ,  H01J61/526 ,  H01J61/28

Abstract: Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.

公开(公告)号：US20220223405A1

公开(公告)日：2022-07-14

申请号：US17706090

申请日：2022-03-28

Applicant: Beijing E-Town Semiconductor Technology, Co., LTD ,  Mattson Technology, Inc.

Inventor： Shuang Meng ,  Shawming Ma ,  Michael X. Yang

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.

公开(公告)号：US20210343541A1

公开(公告)日：2021-11-04

申请号：US17372847

申请日：2021-07-12

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Shawming Ma

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3105

Abstract: A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.

公开(公告)号：US11039527B2

公开(公告)日：2021-06-15

申请号：US16258744

申请日：2019-01-28

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  G01N21/00 ,  H01J37/32

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US20210050213A1

公开(公告)日：2021-02-18

申请号：US16547724

申请日：2019-08-22

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Stephen E. Savas ,  Shawming Ma

IPC: H01L21/02 ,  H01L21/67

Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.

公开(公告)号：US20200245444A1

公开(公告)日：2020-07-30

申请号：US16258744

申请日：2019-01-28

Applicant: Mattson Technology, Inc.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  H01J37/32 ,  G01N21/00

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US20190198301A1

公开(公告)日：2019-06-27

申请号：US16218931

申请日：2018-12-13

Applicant: Mattson Technology, Inc.

Inventor： Shawming Ma ,  Hua Chung ,  Michael X. Yang ,  Dixit V. Desai ,  Ryan M. Pakulski

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/687

CPC classification number: H01J37/32899 ,  H01J37/32119 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/3341 ,  H01J2237/3342 ,  H01J2237/3345 ,  H01L21/3065 ,  H01L21/68742

Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.

公开(公告)号：US20170207077A1

公开(公告)日：2017-07-20

申请号：US15403455

申请日：2017-01-11

Applicant: Mattson Technology, Inc.

Inventor： Vladimir Nagorny ,  Shawming Ma ,  Vijay M. Vaniapura ,  Ryan M. Pakulski

IPC: H01L21/02 ,  H01L21/027 ,  B08B7/00 ,  H01J37/32

CPC classification number: H01L21/0206 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32651 ,  H01J2237/334 ,  H01L21/0273

Abstract: Systems, methods, and apparatus for processing a substrate in a plasma processing apparatus using a variable pattern separation grid are provided. In one example implementation, a plasma processing apparatus can have a plasma chamber and a processing chamber separated from the plasma chamber. The apparatus can further include a variable pattern separation grid separating the plasma chamber and the processing chamber. The variable pattern separation grid can include a plurality grid plates. Each grid plate can have a grid pattern with one or more holes. At least one of the plurality of grid plates is movable relative to the other grid plates in the plurality of grid plates such that the variable pattern separation grid can provide a plurality of different composite grid patterns.

公开(公告)号：US20250062133A1

公开(公告)日：2025-02-20

申请号：US18934952

申请日：2024-11-01

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Shawming Ma

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3105

Abstract: A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.

公开(公告)号：US20220165561A1

公开(公告)日：2022-05-26

申请号：US17533593

申请日：2021-11-23

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Michael X. Yang ,  Rolf Bremensdorfer ,  Dave Camm ,  Joseph Cibere ,  Dieter Hezler ,  Shawming Ma ,  Yun Yang

IPC: H01J61/86 ,  H01J61/28 ,  H05H1/48 ,  H01J61/073 ,  H01J61/52

Abstract: Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.