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    Robot Blade Design
    11.
    发明申请
    Robot Blade Design 有权
    机器人刀片设计

    公开(公告)号：US20150044008A1

    公开(公告)日：2015-02-12

    申请号：US13959851

    申请日：2013-08-06

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lee-Chuan Tseng ,  Chih-Jen Chan ,  Shih-Wei Lin ,  Che-Ming Chang ,  Chung-Yen Chou ,  Yuan-Chih Hsieh

    IPC: B25J11/00 ,  H01L21/683 ,  H01L21/677 ,  B25J15/06

    CPC classification number: B25J11/0095 ,  B25J15/0014 ,  H01L21/67766 ,  H01L21/68707

    Abstract: The present disclosure relates to a wafer transfer robot having a robot blade that can be used to handle substrates that are patterned on both sides without causing warpage of the substrates. In some embodiments, the wafer transfer robot has a robot blade coupled to a transfer arm that varies a position of the robot blade. The robot blade has a wafer reception area that receives a substrate. Two or more spatially distinct contact points are located at positions along a perimeter of the wafer reception area that provide support to opposing edges of the substrate. The two or more contact points are separated by a cavity in the robot blade. The cavity mitigates contact between a backside of the substrate and the robot blade, while providing support to opposing sides of the substrate to prevent warpage of the substrate.

    Abstract translation: 本公开涉及具有机器人刀片的晶片传送机器人，其可以用于处理在两侧上被图案化的基板，而不会引起基板的翘曲。 在一些实施例中，晶片传送机器人具有联接到改变机器人刀片的位置的传送臂的机器人刀片。 机器人刀片具有接收衬底的晶片接收区域。 两个或更多个空间上不同的接触点位于沿着晶片接收区域的周边的位置，该位置为基板的相对边缘提供支撑。 两个或多个接触点由机器人刀片中的空腔分开。 该腔减轻了衬底的背面与机器人刀片之间的接触，同时为衬底的相对侧提供支撑以防止衬底翘曲。

    Method of Improving Getter Efficiency by Increasing Superficial Area
    14.
    发明申请
    Method of Improving Getter Efficiency by Increasing Superficial Area 有权
    通过增加表面积来提高吸气效率的方法

    公开(公告)号：US20150102432A1

    公开(公告)日：2015-04-16

    申请号：US14053751

    申请日：2013-10-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yuan-Chih Hsieh ,  Li-cheng Chu ,  Hung-Hua Lin ,  Chih-Jen Chan ,  Lan-Lin Chao

    IPC: B81C1/00 ,  H01L21/322 ,  B81B7/00 ,  H01L23/26

    CPC classification number: B81B7/0038 ,  B81B7/0025 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81C1/00285 ,  B81C2203/0118 ,  H01L21/3223 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.

    Abstract translation: 本公开涉及一种吸气方法，其通过在粗糙化的基底表面上沉积吸气材料和相关联的装置来提供高效吸气过程。 在一些实施例中，通过将衬底提供到具有残留气体的处理室中来执行该方法。 在衬底的顶部表面上的结合区域之间的位置处形成一个或多个空腔。 相应的空腔具有在多个方向上变化的内表面的粗糙化。 吸气剂层沉积到一个或多个空腔中。 一个或多个空腔的粗糙化的内表面使得基底能够更有效地吸收残余气体，从而提高吸气过程的效率。

    NOBLE GAS BOMBARDMENT TO REDUCE SCALLOPS IN BOSCH ETCHING
    15.
    发明申请
    NOBLE GAS BOMBARDMENT TO REDUCE SCALLOPS IN BOSCH ETCHING 有权
    NOBLE GAS BOMBARDMENT以减少龙骨蚀刻中的鳞片

    公开(公告)号：US20150069581A1

    公开(公告)日：2015-03-12

    申请号：US14023563

    申请日：2013-09-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Che-Ming Chang ,  Lee-Chuan Tseng ,  Shih-Wei Lin ,  Chih-Jen Chan ,  Yuan-Chih Hsieh ,  Ming Chyi Liu ,  Chung-Yen Chou

    IPC: H01L21/265 ,  H01L29/06 ,  H01L29/02 ,  H01L21/3065

    CPC classification number: H01L21/30655 ,  H01L21/2633 ,  H01L21/3065 ,  H01L27/00

    Abstract: A method of etching a trench in a substrate is provided. The method repeatedly alternates between using a fluorine-based plasma to etch a trench, which has trench sidewalls, into a selected region of the substrate; and using a fluorocarbon plasma to deposit a liner on the trench sidewalls. The liner, when formed and subsequently etched, has an exposed sidewall surface that includes scalloped recesses. The trench, which includes the scalloped recesses, is then bombarded with a molecular beam where the molecules are directed on an axis parallel to the trench sidewalls to reduce the scalloped recesses.

    Abstract translation: 提供了蚀刻衬底中的沟槽的方法。 该方法在使用氟基等离子体之间重复地交替，以将具有沟槽侧壁的沟槽蚀刻到衬底的选定区域中; 以及使用氟碳等离子体将衬垫沉积在沟槽侧壁上。 衬里当形成并随后被蚀刻时具有包括扇形凹槽的暴露的侧壁表面。 包括扇形凹槽的沟槽然后用分子束轰击，其中分子被引导在平行于沟槽侧壁的轴上以减少扇形凹部。

    Structure to reduce backside silicon damage
    16.
    发明授权
    Structure to reduce backside silicon damage 有权

    公开(公告)号：US10138118B2

    公开(公告)日：2018-11-27

    申请号：US15671647

    申请日：2017-08-08

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chung-Yen Chou ,  Chih-Jen Chan ,  Chia-Shiung Tsai ,  Ru-Liang Lee ,  Yuan-Chih Hsieh

    IPC: B81C1/00 ,  B81B7/00

    Abstract: An integrated circuit (IC) device is provided. The IC device includes a first die including a first substrate and a second die including a second substrate. A plasma-reflecting layer is included on an upper surface of the first die. The plasma-reflecting layer is configured to reflect a plasma therefrom. The second substrate is bonded to the first die so as to form a cavity, wherein a lower surface of the cavity is lined by the plasma-reflecting layer. A dielectric protection layer is present on a lower surface of the second die and lines the upper surface of the cavity. A material of the second substrate has a first etch rate for the plasma and a material of the dielectric protection layer has a second etch rate for the plasma. The second etch rate is less than the first etch rate.

    Cup-Like Getter Scheme
    19.
    发明申请
    Cup-Like Getter Scheme 有权
    杯状吸气剂计划

    公开(公告)号：US20150069539A1

    公开(公告)日：2015-03-12

    申请号：US14023572

    申请日：2013-09-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Jen Chan ,  Lee-Chuan Tseng ,  Shih-Wei Lin ,  Che-Ming Chang ,  Chung-Yen Chou ,  Yuan-Chih Hsieh

    IPC: B81C1/00 ,  B81B7/00 ,  H01L21/322

    CPC classification number: B81C1/00285 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/015 ,  B81C2203/0118 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased.

    Abstract translation: 本公开涉及一种通过增加其中沉积吸气剂层的区域和相关联的装置来提供高效吸气过程的吸气方法。 在一些实施例中，通过将衬底提供到具有一个或多个残余气体的处理室中来执行该方法。 在衬底的顶表面内形成空腔。 空腔具有底表面和从底表面延伸到顶表面的侧壁。 吸收一种或多种残余气体的吸气剂层在从腔的底表面延伸到侧壁上的位置的位置上沉积在衬底上。 通过沉积吸气剂层以延伸到腔的侧壁上的位置，能够吸收一种或多种残留气体的衬底的面积增加。

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