CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer
    11.
    发明申请
    CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer 审中-公开
    具有硅功能层的CMOS集成移动门传感器

    公开(公告)号:US20160115013A1

    公开(公告)日:2016-04-28

    申请号:US14988842

    申请日:2016-01-06

    Abstract: A method of fabricating a semiconductor device comprises forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion, forming a source region and a drain region in the substrate, forming a gate electrode in the proof mass portion, and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region.

    Abstract translation: 一种制造半导体器件的方法包括在衬底上形成电介质层,所述电介质层包括固定电介质部分和校准质量部分,在衬底中形成源极区域和漏极区域,在校准质量块中形成栅极电极 部分,并且释放证明质量部分,使得证明质量部分相对于固定电介质部分可移动,并且栅极电极可相对于源极区域和漏极区域与校准质量部分一起移动。

    COMPACT MICROELECTROMECHANICAL ANGULAR RATE SENSOR

    公开(公告)号:US20230322548A1

    公开(公告)日:2023-10-12

    申请号:US18185189

    申请日:2023-03-16

    Abstract: A MEMS angular rate sensor is presented with two pairs of suspended masses that are micromachined on a semiconductor layer. A first pair includes two masses opposite to and in mirror image of each other. The first pair of masses has driving structures to generate a mechanical oscillation in a linear direction. A second pair of masses includes two masses opposite to and in mirror image of each other. The second pair of masses is coupled to the first pair of driving masses with coupling elements. The two pairs of masses are coupled to a central bridge. The central bridge has a differential configuration to reject any external disturbances. Each of the masses of the two pairs of masses includes different portions to detect different linear and angular movements.

    INTEGRATED STRUCTURE OF MEMS PRESSURE SENSOR AND MEMS INERTIA SENSOR

    公开(公告)号:US20180044174A1

    公开(公告)日:2018-02-15

    申请号:US15554652

    申请日:2015-12-14

    Applicant: Goertek.Inc

    Inventor: Guoguang ZHENG

    Abstract: The present invention discloses a integrated structure of an MEMS pressure sensor and an MEMS inertia sensor, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate. The integrated structure according to the present invention integrates the MEMS inertia sensor and the MEMS pressure sensor on the same substrate, which may effectively reduce the area of the chip, so as to reduce the cost of the chip. Single packaging may complete the packaging of the entire chip and reduce the cost of the chip packaging.

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