公开(公告)号：US20170158490A1

公开(公告)日：2017-06-08

申请号：US15437727

申请日：2017-02-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  G06F17/50 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20160355392A1

公开(公告)日：2016-12-08

申请号：US15238854

申请日：2016-08-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: B81B3/00 ,  H01H59/00 ,  B81C1/00 ,  G06F17/50

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US20160244321A1

公开(公告)日：2016-08-25

申请号：US15148130

申请日：2016-05-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  H01H59/00 ,  H01H1/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract translation: 形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。 该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。 下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。

公开(公告)号：US09363609B2

公开(公告)日：2016-06-07

申请号：US14044654

申请日：2013-10-02

Applicant: Infineon Technologies AG

Inventor： Wolfgang Friza ,  Thomas Grille ,  Klaus Muemmler ,  Guenter Ziegler ,  Carsten Ahrens

IPC: H01L29/00 ,  H04R23/00 ,  B81C1/00 ,  G01L9/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: H04R23/00 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00936 ,  B81C2201/0109 ,  G01L9/0042 ,  H04R19/005 ,  H04R31/006

Abstract: Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.

公开(公告)号：US20160096721A1

公开(公告)日：2016-04-07

申请号：US14963844

申请日：2015-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US09218970B2

公开(公告)日：2015-12-22

申请号：US14642968

申请日：2015-03-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Rueijer Lin ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Ming-Hsing Tsai

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/308 ,  B81C1/00 ,  H01L21/02 ,  H01L21/768

CPC classification number: B81C1/00158 ,  B81B7/008 ,  B81B2207/015 ,  B81B2207/096 ,  B81C1/00246 ,  B81C1/00333 ,  B81C1/00539 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/0127 ,  B81C2203/0742 ,  B81C2203/0778 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02247 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76802

Abstract: A method to form a titanium nitride (TiN) hard mask in the Damascene process of forming interconnects during the fabrication of a semiconductor device, while the type and magnitude of stress carried by the TiN hard mask is controlled. The TiN hard mask is formed in a multi-layered structure where each sub-layer is formed successively by repeating a cycle of processes comprising TiN and chlorine PECVD deposition, and N2/H2 plasma gas treatment. During its formation, the stress to be carried by the TiN hard mask is controlled by controlling the number of TiN sub-layers and the plasma gas treatment duration such that the stress may counter-balance predetermined external stress anticipated on a conventionally made TiN hard mask, which causes trench sidewall distortion, trench opening shrinkage, and gap filling problem.

Abstract translation: 在半导体器件制造期间在形成互连的镶嵌工艺中形成氮化钛（TiN）硬掩模的方法，同时控制由TiN硬掩模承载的应力的类型和大小。 TiN硬掩模以多层结构形成，其中通过重复包括TiN和氯PECVD沉积以及N2 / H2等离子体气体处理的工艺循环来连续形成每个子层。 在其形成期间，通过控制TiN子层的数量和等离子体气体处理持续时间来控制由TiN硬掩模承载的应力，使得应力可以平衡在常规制备的TiN硬掩模上预期的预定外部应力 ，这导致沟槽侧壁变形，沟槽开口收缩和间隙填充问题。

公开(公告)号：US09214167B2

公开(公告)日：2015-12-15

申请号：US13796951

申请日：2013-03-12

Applicant: Seagate Technology LLC

Inventor： Wei Tian ,  Venkateswara Rao Inturi ,  Doug Lin ,  Huaqing Yin ,  Jiaoming Qiu

IPC: G11B5/187 ,  G11B5/23 ,  G11B5/127 ,  G11B5/31 ,  G11B5/235

CPC classification number: G11B5/3176 ,  B81C1/00611 ,  B81C2201/0109 ,  C09K13/00 ,  C23F4/00 ,  G03F7/0041 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/232 ,  G11B5/235 ,  G11B5/3109 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163

Abstract: In accordance with one embodiment, an apparatus may be implemented that comprises a main pole layer of magnetic material, a non-magnetic gap layer of material above the main pole layer, an etched first sacrificial layer of material above the non-magnetic gap layer of material, and a second sacrificial layer of material above the etched first sacrificial layer of material.

Abstract translation: 根据一个实施例，可以实现一种装置，其包括磁性材料的主极层，主极层上方的材料的非磁性间隙层，在非磁性间隙层上方的蚀刻的第一牺牲层材料 材料，以及材料上方的蚀刻的第一牺牲层上方的材料的第二牺牲层。

公开(公告)号：US08877537B2

公开(公告)日：2014-11-04

申请号：US13882337

申请日：2011-05-19

Applicant: Jianhong Mao ,  Deming Tang

Inventor： Jianhong Mao ,  Deming Tang

IPC: H01L21/00 ,  B81C1/00 ,  G01P15/08 ,  H03H3/007

CPC classification number: B81C1/0015 ,  B81B2203/0118 ,  B81B2207/07 ,  B81C1/00293 ,  B81C2201/0109 ,  B81C2201/0125 ,  B81C2203/0145 ,  G01P15/0802 ,  G01P2015/0828 ,  H03H3/0072

Abstract: A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure (100) formed therein; forming a first sacrificial layer (201) on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon; etching the first sacrificial layer to form a first recess (301); covering and forming a first dielectric layer (401) on the surface of the first sacrificial layer; thinning the first dielectric layer by a chemical mechanical polishing (CMP) process, until exposing the first sacrificial layer; forming a micromechanical structure layer (500) on the surface of the first sacrificial layer and exposing the first sacrificial layer, wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency.

Abstract translation: 提供了一种用于制造微机电系统（MEMS）装置的方法。 该方法包括：提供半导体衬底，其中形成有金属互连结构（100）的半导体衬底; 在所述半导体衬底的表面上形成第一牺牲层（201），所述第一牺牲层的材料是无定形碳; 蚀刻第一牺牲层以形成第一凹部（301）; 在第一牺牲层的表面上覆盖并形成第一介电层（401）; 通过化学机械抛光（CMP）工艺使第一介电层变薄，直到暴露出第一牺牲层; 在所述第一牺牲层的表面上形成微机械结构层（500）并暴露所述第一牺牲层，其中所述微机械结构层的一部分连接到所述第一介电层。 该方法避免抛光无定形碳，缩短生产周期，提高生产效率。

公开(公告)号：US08865497B2

公开(公告)日：2014-10-21

申请号：US12973422

申请日：2010-12-20

Applicant: George A. Dunbar, III ,  Zhong-Xiang He ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper

Inventor： George A. Dunbar, III ,  Zhong-Xiang He ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper

IPC: H01L29/84 ,  B81C1/00 ,  B81B3/00 ,  G06F17/50 ,  H01H57/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires from the lower wiring layer. The method further includes forming an electrode beam over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition.

Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括在基板上形成下布线层。 该方法还包括从下布线层形成多条分立布线。 该方法还包括在多个离散导线上形成电极束。 形成电极束和多个离散导线中的至少一个形成有最小化后续硅沉积中的小丘和三点的布局。

公开(公告)号：US20140264475A1

公开(公告)日：2014-09-18

申请号：US13925127

申请日：2013-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Rueijer Lin ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Minghsing Tsai

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00158 ,  B81B7/008 ,  B81B2207/015 ,  B81B2207/096 ,  B81C1/00246 ,  B81C1/00333 ,  B81C1/00539 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/0127 ,  B81C2203/0742 ,  B81C2203/0778 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02247 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76802

Abstract: An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.

Abstract translation: 一种集成电路器件，包括设置在半导体衬底上的电介质层，介电层具有形成在其中的牺牲腔，形成在电介质层上的膜层，以及形成在膜层上的封盖结构，从而形成第二腔， 第二腔通过形成于膜层中的通孔连接到牺牲腔。