公开(公告)号：US09148726B2

公开(公告)日：2015-09-29

申请号：US13230264

申请日：2011-09-12

Applicant: Alfons Dehe

Inventor： Alfons Dehe

IPC: H04R7/14 ,  H04R7/12 ,  B81C1/00 ,  G01L9/00 ,  H04R7/24 ,  H04R31/00 ,  H04R1/00 ,  H04R19/00

CPC classification number: H04R7/125 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/00476 ,  B81C2201/0167 ,  G01L9/0016 ,  H04R1/005 ,  H04R7/14 ,  H04R7/24 ,  H04R19/005 ,  H04R31/003 ,  H04R2201/003 ,  H04R2440/05

Abstract: A micro electrical mechanical system includes a membrane structure and a backplate structure. The backplate structure includes a backplate material and at least one pre-tensioning element mechanically connected to the backplate material. The at least one pre-tensioning element causes a mechanical tension on the backplate material for a bending deflection of the backplate structure in a direction away from the membrane structure.

Abstract translation: 微电气机械系统包括膜结构和背板结构。 背板结构包括背板材料和机械地连接到背板材料的至少一个预张紧元件。 所述至少一个预张紧元件在所述背板材料上引起机械张力，以使所述背板结构沿远离所述膜结构的方向弯曲偏转。

公开(公告)号：US20150041932A1

公开(公告)日：2015-02-12

申请号：US14515681

申请日：2014-10-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. HERRIN ,  Christopher V. JAHNES ,  Anthony K. STAMPER ,  Eric J. WHITE

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.

Abstract translation: 形成至少一个微机电系统（MEMS）空腔的方法包括在布线层和基板上形成第一牺牲腔层。 该方法还包括在第一牺牲腔层上形成绝缘体层。 该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。 该方法还包括平坦化绝缘体层和第一牺牲腔层。 该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔的平坦表面。

公开(公告)号：US20140284729A1

公开(公告)日：2014-09-25

申请号：US13962892

申请日：2013-08-08

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kei OBARA ,  Yoshiaki SUGIZAKI ,  Yoshiaki SHIMOOKA

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0051 ,  B81B7/0032 ,  B81B7/0035 ,  B81B7/0038 ,  B81C2201/0167 ,  B81C2203/0136

Abstract: According to one embodiment, an electrical component comprises a substrate, a functional element formed on the substrate, a first layer which includes through holes, and forms a cavity that stores the functional element on the substrate, and a second layer which is formed on the first layer, and closes the through holes. The first layer includes a first film, a second film on the first film, and a third film on the second film. A Young's modulus of the second film is higher than a Young's modulus of the first film and the third film.

Abstract translation: 根据一个实施例，电气部件包括基板，形成在基板上的功能元件，包括通孔的第一层，并且形成将功能元件存储在基板上的空腔和形成在基板上的第二层 第一层，并关闭通孔。 第一层包括第一膜，第一膜上的第二膜和第二膜上的第三膜。 第二膜的杨氏模量高于第一膜和第三膜的杨氏模量。

公开(公告)号：US08558643B2

公开(公告)日：2013-10-15

申请号：US13468052

申请日：2012-05-10

Applicant: Mika Prunnila ,  Antti Jaakkola ,  Tuomas Pensala

Inventor： Mika Prunnila ,  Antti Jaakkola ,  Tuomas Pensala

IPC: H03H9/24 ,  H03H3/013 ,  H01L29/06 ,  H01L21/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0177 ,  G06F17/5045 ,  H03H9/02448 ,  H03H9/2447 ,  H03H2009/2442

Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.

Abstract translation: 本发明涉及一种微机械装置，其包括能够偏转或谐振并且包括具有不同材料特性的至少两个区域的半导体元件和功能性耦合到所述半导体元件的驱动或感测装置。 根据本发明，所述区域中的至少一个包括一种或多种n型掺杂剂，并且所述区域的相对体积，掺杂浓度，掺杂剂和/或晶体取向被构造成使得广义刚度的温度敏感度 在区域的至少一个温度下符号相反，半导体元件的整体刚度的总体温度漂移在100℃的温度范围内为50ppm以下。该器件可以是谐振器。 还公开了一种设计该设备的方法。

公开(公告)号：US20120293236A1

公开(公告)日：2012-11-22

申请号：US13566053

申请日：2012-08-03

Applicant: David J. Frank ,  Guy Cohen

Inventor： David J. Frank ,  Guy Cohen

IPC: H03K17/00 ,  B23P17/04

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

公开(公告)号：US08314983B2

公开(公告)日：2012-11-20

申请号：US12615358

申请日：2009-11-10

Applicant: David J. Frank ,  Guy Cohen

Inventor： David J. Frank ,  Guy Cohen

IPC: G02B26/08

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

公开(公告)号：US08298847B2

公开(公告)日：2012-10-30

申请号：US12766702

申请日：2010-04-23

Applicant: Lior Kogut ,  Chun-Ming Wang ,  Chengbin Qui ,  Stephen Zee ,  Fan Zhong

Inventor： Lior Kogut ,  Chun-Ming Wang ,  Chengbin Qui ,  Stephen Zee ,  Fan Zhong

IPC: H01L21/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

Abstract translation: MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。

公开(公告)号：US20120225259A1

公开(公告)日：2012-09-06

申请号：US13038459

申请日：2011-03-02

Applicant: Dennis Mortensen ,  Pirmin Hermann Otto Rombach

Inventor： Dennis Mortensen ,  Pirmin Hermann Otto Rombach

IPC: B32B3/10 ,  H01L21/00 ,  B32B15/00

CPC classification number: B81C1/00666 ,  B81B3/0078 ,  B81B2201/0257 ,  B81C2201/0167 ,  H04R19/005 ,  Y10T29/41 ,  Y10T428/24802 ,  Y10T428/249921 ,  Y10T428/25

Abstract: The present invention refers to a flat back plate, e.g. for MEMS capacitors e.g. for MEMS microphones. For that the back plate comprises a tensile element that exerts a horizontal tensile stress on its environment.

Abstract translation: 本发明涉及平板背板，例如 用于MEMS电容器 用于MEMS麦克风。 为此，背板包括在其环境上施加水平拉伸应力的拉伸元件。

公开(公告)号：US20110316101A1

公开(公告)日：2011-12-29

申请号：US12973430

申请日：2010-12-20

Applicant: Dinh DANG ,  Thai DOAN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

Inventor： Dinh DANG ,  Thai DOAN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

IPC: H01L29/84 ,  G06F17/50 ,  H01L21/302

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a plurality of discrete wires on a substrate. The method further includes forming a sacrificial cavity layer on the discrete wires. The method further includes forming trenches in an upper surface of the sacrificial cavity layer. The method further includes filling the trenches with dielectric material. The method further includes depositing metal on the sacrificial cavity layer and on the dielectric material to form a beam with at least one dielectric bumper extending from a bottom surface thereof.

Abstract translation: 形成至少一个微电子机械系统（MEMS）的方法包括在基板上形成多个分立的导线。 该方法还包括在分立导线上形成牺牲腔层。 该方法还包括在牺牲腔层的上表面中形成沟槽。 该方法还包括用电介质材料填充沟槽。 该方法还包括在牺牲腔层和电介质材料上沉积金属以形成具有从其底表面延伸的至少一个介电保险杠的梁。

公开(公告)号：US20110315528A1

公开(公告)日：2011-12-29

申请号：US12977850

申请日：2010-12-23

Applicant: Russell T. HERRIN ,  Jeffrey C. Maling ,  Anthony K. Stamper

Inventor： Russell T. HERRIN ,  Jeffrey C. Maling ,  Anthony K. Stamper

IPC: H01H57/00 ,  G06F17/50 ,  H01L21/56

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

Abstract translation: 形成至少一个微电子机械系统（MEMS）的方法包括在远离梁结构的绝缘体层上形成梁结构和电极。 该方法还包括在光束结构上方并且远离电极形成至少一个牺牲层。 该方法还包括在至少一个牺牲层和电极上形成盖结构。 该方法还包括同时提供穿过盖结构的通气孔以暴露牺牲层并在电极上形成部分通孔。 该方法还包括排出牺牲层以形成空腔。 该方法还包括用材料密封通气孔。 该方法还包括通过部分通孔在盖结构中形成最终通孔至电极。