公开(公告)号：US20110026106A1

公开(公告)日：2011-02-03

申请号：US12907622

申请日：2010-10-19

Applicant: Teruno NAKAGUMA ,  Kentaro ICHII ,  Shoji TANIGAWA

Inventor： Teruno NAKAGUMA ,  Kentaro ICHII ,  Shoji TANIGAWA

IPC: H01S3/067 ,  G02B6/036 ,  H01S3/063

CPC classification number: H01S3/06716 ,  C03C3/06 ,  C03C13/045 ,  C03C2201/10 ,  C03C2201/12 ,  C03C2201/14 ,  C03C2201/28 ,  C03C2201/31 ,  C03C2201/3488 ,  C03C2201/36 ,  G02B6/024 ,  G02B6/036 ,  G02B6/03605 ,  G02B6/03633 ,  G02B6/03638 ,  G02B6/03644 ,  G02B6/03661 ,  H01S3/06712 ,  H01S3/06729 ,  H01S3/0675 ,  H01S3/094007 ,  H01S3/1608 ,  H01S3/1618 ,  H01S3/1691 ,  H01S3/1693

Abstract: An ytterbium-doped optical fiber of the present invention includes: a core which contains ytterbium, aluminum, and phosphorus and does not contain germanium; and a cladding which surrounds this core. The ytterbium concentration in the core in terms of ytterbium oxide is 0.09 to 0.68 mole percent. The molar ratio between the phosphorus concentration in the core in terms of diphosphorus pentoxide and the above ytterbium concentration in terms of ytterbium oxide is 3 to 30. The molar ratio between the aluminum concentration in the core in terms of aluminum oxide and the above ytterbium concentration in terms of ytterbium oxide is 3 to 32. The molar ratio between the above aluminum concentration in terms of aluminum oxide and the above phosphorus concentration in terms of diphosphorus pentoxide is 1 to 2.5.

Abstract translation: 本发明的镱掺杂光纤包括：含有镱，铝和磷并且不含锗的芯; 以及围绕该芯的包层。 以镱氧化物计，核心中的镱浓度为0.09〜0.68摩尔％。 以氧化镱表示的核心中的磷浓度与上述镱的氧化镱浓度之间的摩尔比为3〜30。以氧化铝计的核心中的铝浓度与上述镱的浓度 氧化镱的数量为3〜32。以氧化铝计的上述铝浓度与上述磷浓度之间的摩尔比为1〜2.5。

公开(公告)号：US10017413B2

公开(公告)日：2018-07-10

申请号：US14950374

申请日：2015-11-24

Applicant: CORNING INCORPORATED

Inventor： Sezhian Annamalai ,  Carlos Alberto Duran ,  Kenneth Edward Hrdina ,  Lisa Anne Moore

IPC: C03C3/06 ,  C03C3/112 ,  C03C3/089 ,  G03F1/22 ,  C03B25/02 ,  C03B19/02 ,  C03C3/115 ,  C03C21/00 ,  C03C23/00 ,  C03B5/225 ,  C03B25/00

CPC classification number: C03C3/112 ,  C03B5/225 ,  C03B19/02 ,  C03B25/00 ,  C03B25/02 ,  C03B2201/10 ,  C03B2201/12 ,  C03B2201/14 ,  C03B2201/42 ,  C03C3/06 ,  C03C3/089 ,  C03C3/115 ,  C03C21/007 ,  C03C23/007 ,  C03C2201/10 ,  C03C2201/12 ,  C03C2201/14 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/42 ,  C03C2203/10 ,  C03C2203/54 ,  G03F1/22

Abstract: A method of forming a doped silica-titania glass is provided. The method includes blending batch materials comprising silica, titania, and at least one dopant. The method also includes heating the batch materials to form a glass melt. The method further includes consolidating the glass melt to form a glass article, and annealing the glass article.

公开(公告)号：US09822030B2

公开(公告)日：2017-11-21

申请号：US15003115

申请日：2016-01-21

Applicant: Corning Incorporated

Inventor： Sezhian Annamalai ,  Carlos Alberto Duran ,  Kenneth Edward Hrdina ,  William Rogers Rosch

IPC: C03C3/06 ,  C03C3/076 ,  C03C3/089 ,  C03C23/00 ,  C03B25/00 ,  C03C3/112 ,  C03B19/12 ,  C03B19/14 ,  C03B25/02

CPC classification number: C03C3/076 ,  C03B19/12 ,  C03B19/1453 ,  C03B25/00 ,  C03B25/02 ,  C03B2201/10 ,  C03B2201/12 ,  C03B2201/42 ,  C03C3/06 ,  C03C3/089 ,  C03C3/112 ,  C03C23/007 ,  C03C2201/10 ,  C03C2201/12 ,  C03C2201/14 ,  C03C2203/52

Abstract: Annealing treatments for modified titania-silica glasses and the glasses produced by the annealing treatments. The annealing treatments include an isothermal hold that facilitates equalization of non-uniformities in fictive temperature caused by non-uniformities in modifier concentration in the glasses. The annealing treatments may also include heating the glass to a higher temperature following the isothermal hold and holding the glass at that temperature for several hours. Glasses produced by the annealing treatments exhibit high spatial uniformity of CTE, CTE slope, and fictive temperature, including in the presence of a spatially non-uniform concentration of modifier.

公开(公告)号：US20170331245A1

公开(公告)日：2017-11-16

申请号：US15485836

申请日：2017-04-12

Applicant: Corning Incorporated

Inventor： Douglas Llewellyn Butler ,  Daniel Warren Hawtof

IPC: H01S3/067 ,  C03C3/04 ,  C03B37/027 ,  C03B37/014 ,  H01S3/16 ,  C03C13/04

CPC classification number: H01S3/06729 ,  C03B19/1453 ,  C03B19/1469 ,  C03B19/1492 ,  C03B23/023 ,  C03B23/051 ,  C03B33/06 ,  C03B2201/12 ,  C03B2201/28 ,  C03B2201/30 ,  C03B2201/31 ,  C03B2201/32 ,  C03B2201/34 ,  C03B2201/36 ,  C03B2201/42 ,  C03B2207/60 ,  C03C3/06 ,  C03C13/045 ,  C03C2201/10 ,  C03C2201/12 ,  C03C2201/14 ,  C03C2213/00 ,  G02B6/032 ,  G02B6/03605 ,  H01S3/063 ,  H01S3/06733 ,  H01S3/1603 ,  H01S3/176

Abstract: Laser waveguides, methods and systems for forming a laser waveguide are provided. The waveguide includes an inner cladding layer surrounding a central axis and a glass core surrounding and located outside of the inner cladding layer. The glass core includes a laser-active material. The waveguide includes an outer cladding layer surrounding and located outside of the glass core. The inner cladding, outer cladding and/or core may surround a hollow central channel or bore and may be annular in shape.

公开(公告)号：US20100028787A1

公开(公告)日：2010-02-04

申请号：US12490833

申请日：2009-06-24

Applicant: Akio KOIKE ,  Ken EBIHARA

Inventor： Akio KOIKE ,  Ken EBIHARA

IPC: G03F7/20 ,  G03F1/00 ,  C03C3/04

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  C03B19/1415 ,  C03B19/1453 ,  C03B19/1469 ,  C03B19/1492 ,  C03B2201/21 ,  C03B2201/42 ,  C03C3/06 ,  C03C2201/14 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/42 ,  Y02P40/57

Abstract: A substrate that is suitable for an EUV mask or an EUV mask blank and excellent in flatness, is provided.A substrate for an EUV mask blank, which is made of a silica glass containing from 1 to 12 mass % of TiO2, wherein the surface roughness (rms) in a surface quality area of the substrate is at most 2 nm, and the maximum variation (PV) of the stress in the surface quality area of the substrate is at most 0.2 MPa.

Abstract translation: 提供了适用于EUV掩模或EUV掩模坯料并且具有优异的平面度的基板。 由含有1〜12质量％的TiO 2的二氧化硅玻璃构成的EUV掩模坯的基板，其中，所述基板的表面质量区域的表面粗糙度（rms）为2nm以下，最大变化量 基板的表面质量区域的应力的最大值（PV）为0.2MPa以下。

公开(公告)号：US2533103A

公开(公告)日：1950-12-05

申请号：US8858449

申请日：1949-04-20

Applicant: COURTAULDS LTD

Inventor： HARRISON GIVENS JOHN ,  JOHN WALE ,  LESLIE ROSE

IPC: C03B5/225 ,  C03C1/00 ,  C03C3/06 ,  C03C3/091 ,  C03C3/115 ,  D01D10/04 ,  D06B1/02

CPC classification number: D06B1/02 ,  C03B5/225 ,  C03C1/004 ,  C03C3/06 ,  C03C3/091 ,  C03C3/115 ,  C03C2201/14 ,  C03C2201/50 ,  D01D10/0445