METHOD FOR MANUFACTURING SINGLE CRYSTAL
    11.
    发明申请
    METHOD FOR MANUFACTURING SINGLE CRYSTAL 有权
    制造单晶的方法

    公开(公告)号:US20160289861A1

    公开(公告)日:2016-10-06

    申请号:US15036095

    申请日:2014-11-12

    Abstract: Method for manufacturing a single crystal according to a CZ method, including: pre-examining a correlation between an Al/Li ratio in a quartz raw material powder used for producing the quartz crucible, a use time of the crucible, a devitrification ratio at the use time, and occurrence or nonoccurrence of melt leakage attributable to the devitrification part; setting a range of the devitrification ratio of the quartz crucible in order not to generate the melt leakage, and determining a maximum use time of the quartz crucible according to the Al/Li ratio so as to fall within the set range of the ratio, on the basis of the correlation; and growing the single crystal by using the quartz crucible in the range of the maximum use time. This provides a manufacturing method which can efficiently use a quartz crucible to grow a single crystal while preventing occurrence of melt leakage.

    Abstract translation: 根据CZ方法制造单晶的方法,包括:预先检查用于制造石英坩埚的石英原料粉末中的Al / Li比与坩埚的使用时间, 使用时间,以及归因于失透部分的熔体泄漏的发生或不发生; 设定石英坩埚的失透比的范围,以便不产生熔体泄漏,并且根据Al / Li比确定石英坩埚的最大使用时间,使其落入该比率的设定范围内 相关的基础; 并在最大使用时间范围内使用石英坩埚生长单晶。 这提供了可以有效地使用石英坩埚来生长单晶同时防止熔体泄漏的发生的制造方法。

    SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND MANUFACTURING METHOD THEREOF
    13.
    发明申请
    SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND MANUFACTURING METHOD THEREOF 有权
    单晶硅拉丝二氧化硅容器及其制造方法

    公开(公告)号:US20140053772A1

    公开(公告)日:2014-02-27

    申请号:US14004085

    申请日:2012-10-02

    Inventor: Shigeru Yamagata

    Abstract: The present invention provides a single-crystal silicon pulling silica container including an outer layer made of opaque silica glass containing gaseous bubbles and an inner layer made of transparent silica glass that does not substantially contain the gaseous bubbles; the container also including: a bottom portion, a curved portion, and a straight body portion, wherein continuous grooves are formed on a surface of the inner layer from at least part of the bottom portion to at least part of the straight body portion through the curved portion. As a result, there are provided the single-crystal silicon pulling silica container that can reduce defects called voids or pinholes in the pulled single-crystal silicon and a method for manufacturing such a silica container.

    Abstract translation: 本发明提供一种单晶硅拉硅石容器,其包括由含有气泡的不透明石英玻璃制成的外层和由实质上不含有气泡的透明石英玻璃制成的内层; 所述容器还包括:底部,弯曲部分和直体部分,其中在所述内层的表面上从所述底部的至少一部分到所述直体部分的至少一部分通过所述内部部分形成连续的凹槽 弯曲部分。 结果,提供了可以减少拉制的单晶硅中的称为空隙或针孔的缺陷的单晶硅拉硅
    石容器以及这种二氧化硅容器的制造方法。

    Amplification device utilizing thulium doped modified silicate optical fiber
    16.
    发明授权
    Amplification device utilizing thulium doped modified silicate optical fiber 失效
    利用掺doped改性硅酸盐光纤的放大器件

    公开(公告)号:US07245424B2

    公开(公告)日:2007-07-17

    申请号:US11151176

    申请日:2005-06-09

    Abstract: A device amplifies light at wavelengths in the vicinity of 1420-1530 nm, using thulium doped silica-based optical fiber. This wavelength band is of interest as it falls in the low-loss optical fiber telecommunications window, and is somewhat shorter in wavelength than the currently standard erbium doped silica fiber amplifier. The device thus extends the band of wavelengths which can be supported for long-distance telecommunications. The additional wavelength band allows the data transmission rate to be substantially increased via wavelength division multiplexing (WDM), with minimal modification to the standard equipment currently used for WDM systems. The host glass is directly compatible with standard silica-based telecommunications fiber. The invention also enables modified silicate based amplifiers and lasers on a variety of alternative transitions. Specifically, an S-band thulium doped fiber amplifier (TDFA) using a true silicate fiber host is described.

    Abstract translation: 器件利用ium掺杂的二氧化硅基光纤放大1420-1530nm附近波长的光。 该波长带在低损耗光纤通信窗口中是有意义的,并且其波长比当前标准的掺铒二氧化硅光纤放大器稍短。 因此,该装置延长了可被长距离通信支持的波长带。 附加波长带允许通过波分复用(WDM)大幅增加数据传输速率,对目前用于WDM系统的标准设备进行最小修改。 主机玻璃与标准的二氧化硅电信光纤直接兼容。 本发明还使得能够在各种替代转变上改性硅酸盐基放大器和激光器。 具体来说,描述了使用真硅酸盐纤维主体的S波段ium掺杂光纤放大器(TDFA)。

    Infrared absorbing glass, and it's fabrication method
    18.
    发明授权
    Infrared absorbing glass, and it's fabrication method 有权
    红外吸收玻璃,它的制作方法

    公开(公告)号:US06342460B1

    公开(公告)日:2002-01-29

    申请号:US09336678

    申请日:1999-06-21

    Abstract: The invention relates to a glass excellent in infrared absorption capability and corrosion resistance, and its fabrication process. A compound of divalent copper and a compound of a metal species for a network modifier oxide are introduced in a wet gel. Then, the wet gel is dipped in a dipping solution having a low solubility with respect to the compound of divalent copper and the compound of a metal species for a network modifier oxide for the precipitation in the wet gel of the divalent-t copper compound and the compound of a metal species for a network modifier oxide, followed by drying and firing. Thus, an infrared absorbing glass comprising 70 to 98 mol % of SiO2, 1 to 12 mol % of CuO and 1 to 18 mol % of a network modifier oxide other than CuO is fabricated.

    Abstract translation: 本发明涉及一种红外吸收能力和耐腐蚀性优异的玻璃及其制造工艺。 将二价铜的化合物和用于网络改性剂氧化物的金属物质的化合物引入湿凝胶中。 然后,将湿凝胶浸入相对于二价铜化合物的低溶解度的浸渍溶液和用于网络改性剂氧化物的金属物质的化合物,用于在二价铜化合物的湿凝胶中沉淀,以及 用于网络改性剂氧化物的金属物质的化合物,随后进行干燥和烧制。 因此,制造包含70〜98摩尔%的SiO 2,1〜12摩尔%的CuO和1〜18摩尔%的CuO以外的网络改性剂氧化物的红外线吸收玻璃。

    Apparatus for producing and casting liquid silicon
    19.
    发明授权
    Apparatus for producing and casting liquid silicon 失效
    用于生产和浇铸液态硅的设备

    公开(公告)号:US4272488A

    公开(公告)日:1981-06-09

    申请号:US075644

    申请日:1979-09-14

    Abstract: The method and apparatus for producing liquid silicon of high purity and for casting silicon. Hydrogen and a hydrogenated silane in gaseous state are mixed, preferably with a source of a small amount of oxygen, in a heated chamber producing the liquid silicon, with the exhaust gases bubbling out of the melt under a baffle. The chamber for the melt of liquid silicon preferably is lined with silicon dioxide. The liquid silicon may be used in making high purity vitreous silica and may be used in making castings of silicon. In making castings, the liquid silicon is accumulated in a second chamber and is periodically drawn from the second chamber into a third chamber which contains the mold for the casting.

    Abstract translation: 用于生产高纯度硅和硅铸造液态硅的方法和装置。 氢气和气态的氢化硅烷在产生液体硅的加热室中混合,优选用少量氧气源,废气在挡板下方从熔体中冒出。 用于液体硅熔体的室优选用二氧化硅衬里。 液硅可用于制造高纯度二氧化硅玻璃,可用于制造硅铸件。 在制造铸件时,液态硅积聚在第二腔室中,并且从第二腔室周期性地拉入包含用于铸造的模具的第三腔室。

    Process for producing liquid silicon
    20.
    发明授权
    Process for producing liquid silicon 失效
    液硅生产工艺

    公开(公告)号:US4176166A

    公开(公告)日:1979-11-27

    申请号:US800191

    申请日:1977-05-25

    Abstract: The method and apparatus for producing liquid silicon of high purity and for casting silicon. Hydrogen and a hydrogenated silane in gaseous state are mixed, preferably with a source of a small amount of oxygen, in a heated chamber producing the liquid silicon, with the exhaust gases bubbling out of the melt under a baffle. The chamber for the melt of liquid silicon preferably is lined with silicon dioxide. The liquid silicon may be used in making high purity vitreous silica and may be used in making castings of silicon. In making castings, the liquid silicon is accumulated in a second chamber and is periodically drawn from the second chamber into a third chamber which contains the mold for the casting.

    Abstract translation: 用于生产高纯度硅和硅铸造液态硅的方法和装置。 氢气和气态的氢化硅烷在产生液体硅的加热室中混合,优选用少量氧气源,废气在挡板下方从熔体中冒出。 用于液体硅熔体的室优选用二氧化硅衬里。 液硅可用于制造高纯度二氧化硅玻璃,可用于制造硅铸件。 在制造铸件时,液态硅积聚在第二腔室中,并且从第二腔室周期性地拉入包含用于铸造的模具的第三腔室。

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