Apparatus for Producing Secondary Electrons, a Secondary Electrode, and an Acceleration Electrode
    11.
    发明申请
    Apparatus for Producing Secondary Electrons, a Secondary Electrode, and an Acceleration Electrode 有权
    用于生产二次电子的装置,二次电极和加速电极

    公开(公告)号:US20080185952A1

    公开(公告)日:2008-08-07

    申请号:US12063000

    申请日:2008-04-04

    Applicant: Andreas Kyek

    Inventor: Andreas Kyek

    CPC classification number: H01J43/02 H01J37/026 H01J37/06 H01J2237/0045

    Abstract: An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.

    Abstract translation: 一种装置包括主电极和加速电极。 加速电极或备选地,附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。 该测量允许以高效的方式产生二次电子。

    Method for charging substrate to a potential
    12.
    发明授权
    Method for charging substrate to a potential 有权
    将基板充电到电位的方法

    公开(公告)号:US07176468B2

    公开(公告)日:2007-02-13

    申请号:US10942184

    申请日:2004-09-16

    CPC classification number: G21K7/00 H01J37/026 H01J2237/0045 H01J2237/0048

    Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.

    Abstract translation: 将绝缘基板的表面充电至目标电位。 在一个实施方案中,表面充满了较高能量的电子束,使得电子产率大于1。 随后,表面被低能电子束淹没,使得电子产率小于1。 在另一个实施例中,衬底被提供有处于大于目标电位的初始电位的状态的表面。 然后用带电粒子充满表面,使得散射颗粒的电荷产率小于1,使得达到达到目标电势的稳定状态。 另一个实施例涉及一种用于将绝缘体的表面充电至靶电位的装置。

    CHARGED PARTICLE BEAM SYSTEM
    13.
    发明申请
    CHARGED PARTICLE BEAM SYSTEM 有权
    充电颗粒光束系统

    公开(公告)号:US20050279934A1

    公开(公告)日:2005-12-22

    申请号:US10801981

    申请日:2004-03-16

    Abstract: A charged particle beam system uses an ion generator for charge neutralization. In some embodiments, the ion generator is configured to maintain an adequate gas pressure at the ion generator to generate ions, but a reduced pressure in the remainder of the vacuum chamber, so that another column can operate in the chamber either simultaneously or after an evacuation process that is much shorter than a process that would be required to evacuate the chamber from the full pressure required at the ion generator. The invention is particularly useful for repair of photolithography masks in a dual beam system.

    Abstract translation: 带电粒子束系统使用离子发生器进行电荷中和。 在一些实施例中,离子发生器被配置为在离子发生器处保持​​足够的气体压力以在真空室的其余部分中产生离子而减小压力,使得另一个柱可以同时或在排空之后在腔室中操作 该过程远远短于将离子发生器所需的全部压力从室内排出所需的过程。 本发明对于双光束系统中的光刻掩模的修复特别有用。

    Particle optical apparatus
    14.
    发明授权
    Particle optical apparatus 有权
    粒子光学仪器

    公开(公告)号:US06462332B1

    公开(公告)日:2002-10-08

    申请号:US09689059

    申请日:2000-10-12

    Abstract: A particle optical apparatus, such as an ion implantation apparatus, an Auger electron spectrometer, an XPS analysis apparatus, and the like, is provided with a radiation source by means of which a wafer or substrate brought into the apparatus can be bombarded by radiation providing for at least a positively charged surface layer of the wafer or substrate. The apparatus further comprises a charge neutralization device with means for providing secondary electron emission and transport means for transporting secondary electrons. This transport means device is provided with a hollow insulating structure for controlled electron transport based on secondary electron emission, particularly in the form of an electron fibre with electrodes at the entrance and exit. The exit of the electron fibre forms a clean secondary electron source.

    Abstract translation: 诸如离子注入装置,俄歇电子能谱仪,XPS分析装置等的粒子光学装置设置有辐射源,通过该辐射源,被带入设备中的晶片或衬底可以被辐射提供 用于晶片或衬底的至少带正电的表面层。 该装置还包括具有用于提供用于传输二次电子的二次电子发射和传输装置的装置的电荷中和装置。 该输送装置具有中空绝缘结构,用于基于二次电子发射的受控电子传输,特别是具有在入口和出口处具有电极的电子束的形式。 电子束的出口形成清洁的二次电子源。

    Method and apparatus for control of surface potential
    15.
    发明授权
    Method and apparatus for control of surface potential 失效
    用于控制表面电位的方法和装置

    公开(公告)号:US5432345A

    公开(公告)日:1995-07-11

    申请号:US958249

    申请日:1992-10-08

    Inventor: Michael A. Kelly

    CPC classification number: H01J37/026 H01J2237/0045 H01J2237/0047

    Abstract: Electron or ion spectroscopy methods are commonly used for the surface analysis of insulating materials. During the illumination of the surface, electrons are emitted leaving behind a positively charged surface. The positively charged surface causes the energy of the emitted electrons to change and interferes with the analysis of their energy spectra. Conventionally, a source of neutralizing low energy electrons is directed to the illuminated region of the surface to neutralize the positive surface charge. The addition, to the non-illuminated region of the material, of a flux of positive particles or a means of emitting negative particles causes a discharge of the positive charge from the illuminated area of the material and establishes a dynamic equilibrium over the surface of the entire specimen. This permits the surface to be maintained at an arbitrarily uniform level controlled by the relative fluxes of the emitted electrons, the neutralizing electron flux, and the discharging means.

    Abstract translation: 电子或离子光谱法通常用于绝缘材料的表面分析。 在照射表面期间,发射电子留下带正电的表面。 带正电的表面使发射的电子的能量发生变化并干扰其能谱的分析。 通常,中和低能电子的源被引导到表面的照射区域以中和正表面电荷。 向材料的非照射区域添加正极粒子的通量或发射负极的装置会引起正电荷从材料的照射区域的放电,并在材料的表面上形成动态平衡 整个标本。 这允许表面保持在由发射电子的相对通量,中和电子通量和放电装置控制的任意均匀的水平。

    System and method for controlling charge-up in an electron beam apparatus
    17.
    发明授权
    System and method for controlling charge-up in an electron beam apparatus 有权
    用于控制电子束装置中的电荷的系统和方法

    公开(公告)号:US09000370B2

    公开(公告)日:2015-04-07

    申请号:US14512672

    申请日:2014-10-13

    Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

    Abstract translation: 本发明提供了用于控制电子束装置中的充电的装置和相应的实施例,其可以在成像扫描的帧周期内在样品表面上产生后不久就消除正电荷。 该方法是使从样品表面发射的二次电子的一些或全部返回到中和积聚在其上的正电荷,从而在有限的时间段内达到电荷平衡。 这些实施例使用控制电极产生延迟场,以将具有低动能的一些二次电子反射回样品表面。

    Technique for confining secondary electrons in plasma-based ion implantation
    18.
    发明授权
    Technique for confining secondary electrons in plasma-based ion implantation 失效
    在等离子体离子注入中限制二次电子的技术

    公开(公告)号:US07667208B2

    公开(公告)日:2010-02-23

    申请号:US11550140

    申请日:2006-10-17

    Applicant: Rajesh Dorai

    Inventor: Rajesh Dorai

    CPC classification number: H01J37/3266 H01J37/32412 H01J2237/0045

    Abstract: A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.

    Abstract translation: 公开了一种限制二次电子在晶片上的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于限制基于等离子体的离子注入中的二次电子的装置和方法。 该装置和方法可以包括放置在目标晶片之下的磁场结构的磁场部分,用于在目标晶片上产生用于限制目标晶片上的二次电子的磁场。 该装置和方法还可以包括基本上平行于目标晶片的上表面的目标晶片上方的磁场。 该装置和方法可以另外包括磁场部分,其包括多个线圈,一个或多个载流导线和多个磁体中的至少一个。

    Apparatus for producing secondary electrons, a secondary electrode, and an acceleration electrode
    19.
    发明授权
    Apparatus for producing secondary electrons, a secondary electrode, and an acceleration electrode 有权
    用于产生二次电子的装置,二次电极和加速电极

    公开(公告)号:US07417240B2

    公开(公告)日:2008-08-26

    申请号:US10718777

    申请日:2003-11-21

    Applicant: Andreas Kyek

    Inventor: Andreas Kyek

    CPC classification number: H01J43/02 H01J37/026 H01J37/06 H01J2237/0045

    Abstract: An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.

    Abstract translation: 一种装置包括主电极和加速电极。 加速电极或备选地,附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。 该测量允许以高效的方式产生二次电子。

    Charged particle beam system
    20.
    发明授权
    Charged particle beam system 有权
    带电粒子束系统

    公开(公告)号:US06979822B1

    公开(公告)日:2005-12-27

    申请号:US10801981

    申请日:2004-03-16

    Abstract: A charged particle beam system uses an ion generator for charge neutralization. In some embodiments, the ion generator is configured to maintain an adequate gas pressure at the ion generator to generate ions, but a reduced pressure in the remainder of the vacuum chamber, so that another column can operate in the chamber either simultaneously or after an evacuation process that is much shorter than a process that would be required to evacuate the chamber from the full pressure required at the ion generator. The invention is particularly useful for repair of photolithography masks in a dual beam system.

    Abstract translation: 带电粒子束系统使用离子发生器进行电荷中和。 在一些实施例中,离子发生器被配置为在离子发生器处保持​​足够的气体压力以在真空室的其余部分中产生离子而减小压力,使得另一个柱可以同时或在排空之后在腔室中操作 该过程远远短于将离子发生器所需的全部压力从室内排出所需的过程。 本发明对于双光束系统中的光刻掩模的修复特别有用。

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