公开(公告)号：US07429743B2

公开(公告)日：2008-09-30

申请号：US11202111

申请日：2005-08-12

Applicant: Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

Inventor： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

IPC: H01L49/00

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

Abstract translation: 本发明是提高具有光束的照射系统的光束照射精度的方法。 照射系统包括光束产生源，质量分析装置，光束变换器，高速摆动光束的扫描器，光束并行化装置，加速/减速装置，能量过滤装置和光束监视器。 光束变换器包括垂直聚焦同步四极电磁体syQD和水平聚焦同步四极电磁体syQF。 因此，可以通过扫描仪摆动光束之后，在中心轨迹和外部轨迹之间的范围内校正光束发散角的偏差和光束尺寸的偏差中的至少一个。

公开(公告)号：US20070262262A1

公开(公告)日：2007-11-15

申请号：US11647924

申请日：2006-12-29

Applicant: Thomas Horsky ,  John Williams

Inventor： Thomas Horsky ,  John Williams

IPC: H01J3/14

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large faction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

公开(公告)号：US20040188631A1

公开(公告)日：2004-09-30

申请号：US10825339

申请日：2004-04-15

Applicant: SemEquip, Inc.

Inventor： Thomas Neil Horsky ,  John Noel Williams

IPC: H01J027/02 ,  H01J037/08

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hxnull; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hxnull; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

公开(公告)号：US06664548B2

公开(公告)日：2003-12-16

申请号：US10209397

申请日：2002-07-31

Applicant: Victor M. Benveniste ,  William F. DiVergilio

Inventor： Victor M. Benveniste ,  William F. DiVergilio

IPC: H01J2706

CPC classification number: H01J37/08 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.

公开(公告)号：US06664547B2

公开(公告)日：2003-12-16

申请号：US10136047

申请日：2002-05-01

Applicant: Victor M. Benveniste

Inventor： Victor M. Benveniste

IPC: H01J2700

CPC classification number: H01J37/08 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed for ion implantation applications, having control apparatus for selectively adjusting a density profile associated with an elongated ion beam being extracted from a plasma confinement chamber. The control apparatus comprises a plurality of magnet pairs proximate an elongated extraction exit through which a ribbon beam is extracted from the ion source, with the magnet pairs individually comprising upper and lower electro-magnets disposed above and below the extraction exit opening to provide adjustable magnetic fields in a pre-extraction region so as to adjust the density profile of an extracted ribbon beam.

公开(公告)号：US20030205683A1

公开(公告)日：2003-11-06

申请号：US10210124

申请日：2002-07-31

Inventor： Victor M. Benveniste

IPC: H01J037/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: Ion implantation systems and beamlines therefor are disclosed, in which a ribbon beam of a relatively large aspect ratio is mass analyzed and collimated to provide a mass analyzed ribbon beam for use in implanting one or more workpieces. The beamline system comprises two similar magnets, where the first magnet mass analyzes the ribbon beam to provide an intermediate mass analyzed ion beam, and the second magnet collimates the intermediate beam to provide a uniform mass analyzed ribbon beam to an end station. The symmetrical system provides equidistant beam trajectories for ions across the elongated beam width so as to mitigate non-linearities in the beam transport through the system, such that the resultant mass analyzed beam is highly uniform.

Abstract translation: 公开了离子注入系统和其束线，其中质量分析和准直以提供质量分析的带状束，用于植入一个或多个工件。 束线系统包括两个类似的磁体，其中第一磁体质量分析带状束以提供中间质量分析离子束，并且第二磁体准直中间光束，以向终端站提供均匀质量分析的带状束。 对称系统为细长波束宽度上的离子提供等距离的波束轨迹，以便减轻通过系统的波束传输中的非线性，使得所得到的质量分析波束高度均匀。

公开(公告)号：US08907278B2

公开(公告)日：2014-12-09

申请号：US13993822

申请日：2011-12-02

Applicant: Momoyo Enyama ,  Hiroya Ota ,  Taku Ninomiya ,  Mari Nozoe

Inventor： Momoyo Enyama ,  Hiroya Ota ,  Taku Ninomiya ,  Mari Nozoe

IPC: G01N23/00 ,  G21K7/00 ,  H01J37/147 ,  H01J37/12 ,  H01J37/28 ,  H01J37/04

CPC classification number: H01J37/045 ,  H01J37/12 ,  H01J37/147 ,  H01J37/28 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24465 ,  H01J2237/2817

Abstract: Provided is a charged particle beam applied apparatus for observing a sample, provided with: a beam-forming section that forms a plurality of charged particle beams on a sample; an energy control unit that controls the incident energy of the plurality of charged particle beams that are irradiated onto the sample; a beam current control unit that controls the beam current of the plurality of charged particle beams that are irradiated onto the sample; and a beam arrangement control unit that controls the arrangement in which the plurality of charged particle beams is irradiated onto the sample. The beam-forming section includes a beam splitting electrode, a lens array upper electrode, a lens array middle electrode, a lens array lower electrode and a movable stage, and functions as the beam current control unit or the beam arrangement control unit through selection, by the movable stage, of a plurality of aperture pattern sets.

Abstract translation: 提供了一种用于观察样品的带电粒子束施加装置，其具有：在样品上形成多个带电粒子束的束形成部分; 能量控制单元，其控制照射到所述样本上的所述多个带电粒子束的入射能量; 束电流控制单元，其控制照射到样品上的多个带电粒子束的束电流; 以及光束布置控制单元，其控制将多个带电粒子束照射到样本上的布置。 束形成部分包括分束电极，透镜阵列上电极，透镜阵列中间电极，透镜阵列下电极和可移动​​台，并且通过选择用作光束电流控制单元或光束布置控制单元， 通过可动台，具有多个孔径图案组。

公开(公告)号：US20130299697A1

公开(公告)日：2013-11-14

申请号：US13993822

申请日：2011-12-02

Applicant: Momoyo Enyama ,  Hiroya Ota ,  Taku Ninomiya ,  Mari Nozoe

Inventor： Momoyo Enyama ,  Hiroya Ota ,  Taku Ninomiya ,  Mari Nozoe

IPC: H01J37/04

CPC classification number: H01J37/045 ,  H01J37/12 ,  H01J37/147 ,  H01J37/28 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24465 ,  H01J2237/2817

Abstract: Provided is a charged particle beam applied apparatus for observing a sample, provided with: a beam-forming section that forms a plurality of charged particle beams on a sample; an energy control unit that controls the incident energy of the plurality of charged particle beams that are irradiated onto the sample; a beam current control unit that controls the beam current of the plurality of charged particle beams that are irradiated onto the sample; and a beam arrangement control unit that controls the arrangement in which the plurality of charged particle beams is irradiated onto the sample. The beam-forming section includes a beam splitting electrode, a lens array upper electrode, a lens array middle electrode, a lens array lower electrode and a movable stage, and functions as the beam current control unit or the beam arrangement control unit through selection, by the movable stage, of a plurality of aperture pattern sets.

Abstract translation: 提供了一种用于观察样品的带电粒子束施加装置，其具有：在样品上形成多个带电粒子束的束形成部分; 能量控制单元，其控制照射到所述样本上的所述多个带电粒子束的入射能量; 束电流控制单元，其控制照射到样品上的多个带电粒子束的束电流; 以及光束布置控制单元，其控制将多个带电粒子束照射到样本上的布置。 束形成部分包括分束电极，透镜阵列上电极，透镜阵列中间电极，透镜阵列下电极和可移动​​台，并且通过选择用作光束电流控制单元或光束布置控制单元， 通过可动台，具有多个孔径图案组。

公开(公告)号：US08502161B2

公开(公告)日：2013-08-06

申请号：US12776636

申请日：2010-05-10

Applicant: Sami K. Hahto ,  Richard Goldberg ,  Edward McIntyre ,  Thomas N. Horsky

Inventor： Sami K. Hahto ,  Richard Goldberg ,  Edward McIntyre ,  Thomas N. Horsky

IPC: H01J27/08

CPC classification number: H01J37/08 ,  H01J27/205 ,  H01J2237/024 ,  H01J2237/082 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.

Abstract translation: 公开了用于半导体制造的离子源。 离子源包括电子发射器，其包括安装在用于制造半导体的电离室外部的阴极。 根据本发明的重要方面，使用电子发射器而没有相应的阳极或电子光学器件。 因此，可以缩短阴极和电离室之间的距离，使得离子源能够以电弧放电模式操作或产生等离子体。 或者，离子源可以通过选择性地改变阴极和电离室之间的距离，以单电子发射器在双重模式下操作。

公开(公告)号：US20120181444A1

公开(公告)日：2012-07-19

申请号：US13006999

申请日：2011-01-14

Applicant: Mohammed TAHMASSEBPUR

Inventor： Mohammed TAHMASSEBPUR

IPC: G21K1/08

CPC classification number: H01J37/09 ,  H01J37/28 ,  H01J2237/0835

Abstract: A novel technique is disclosed for varying a size of an aperture within a vacuum chamber. A drive mechanism within the vacuum chamber is used to adjust a partial horizontal overlap between at least two blades, wherein a perimeter of the aperture opening is defined by edges of said blades. In one embodiment, a variable aperture mechanism includes first and second blades attached to a first support, and third and fourth blades attached to a second support. The first blade is spaced vertically above the second blade on the first support; a second support, and the fourth blade is spaced vertically above the third blade on the second support. There is a partial horizontal overlap between the first and third blades and between the fourth and second blades, and the aperture opening has a perimeter defined by edges of the four blades. Other embodiments are also disclosed.

Abstract translation: 公开了一种用于改变真空室内孔径尺寸的新技术。 真空室内的驱动机构用于调节至少两个叶片之间的部分水平重叠，其中孔口的周边由所述叶片的边缘限定。 在一个实施例中，可变孔径机构包括附接到第一支撑件的第一和第二叶片，以及附接到第二支撑件的第三和第四叶片。 第一刀片在第一支撑件上的第二刀片上方垂直地间隔开; 第二支撑件，并且第四刀片在第二支撑件上的第三刀片上方垂直地间隔开。 在第一和第三叶片之间以及第四和第二叶片之间存在部分水平重叠，并且孔口具有由四个叶片的边缘限定的周长。 还公开了其他实施例。