Abstract:
A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.
Abstract:
A door for a vacuum chamber is disclosed. The present invention is constructed to prevent the door, for opening or closing an opening which is provided in one surface of a chamber, from being deformed by a bending load generated when a vacuum is created in the chamber, thus enabling a vacuum to be reliably created in the chamber, and reducing the cost of maintenance of the door. The door includes a chamber having in one surface thereof an opening. A door is rotated to open or close the opening of the chamber. A guide plate is fastened to an outer surface of the door in such a way as to be spaced apart from the door by a predetermined interval, and is rotatably coupled at one end thereof to a hinge assembly.
Abstract:
A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.
Abstract:
The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is located in the bearing housing for sealing the drive shaft to the housing. An at least one electrical contact is disposed between a power source and the cathode for transmittal of an oscillating or fluctuating current to the cathode. The electrical contact between the power source and the cathode is disposed inside of the vacuum chamber, greatly reducing, and almost eliminating, the current induced heating of various bearing, seals, and other parts of the rotatably sputter cathode assembly.
Abstract:
An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.
Abstract:
The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.
Abstract:
The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.
Abstract:
A sealing mechanism comprises a support member forming part of the semiconductor producing apparatus which has a vacuum chamber, a rotation shaft rotatably received in the support member, and at least three seal rings axially spaced apart from each other between the support member and the rotation shaft to form a first fluid chamber close to the atmosphere and a second fluid chamber close to the vacuum chamber. The first fluid chamber is vacuumized to have a first pressure, and the second fluid chamber is also vacuumized to have a second pressure which is lower than the first pressure. The first and second fluid chambers work together to enhance the sealing performance of the sealing mechanism.
Abstract:
The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is located in the bearing housing for sealing the drive shaft to the housing. An at least one electrical contact is disposed between a power source and the cathode for transmittal of an oscillating or fluctuating current to the cathode. The electrical contact between the power source and the cathode is disposed inside of the vacuum chamber, greatly reducing, and almost eliminating, the current induced heating of various bearing, seals, and other parts of the rotatably sputter cathode assembly.
Abstract:
A sealing mechanism comprises a support member forming part of the semiconductor producing apparatus which has a vacuum chamber, a rotation shaft rotatably received in the support member, and at least three seal rings axially spaced apart from each other between the support member and the rotation shaft to form a first fluid chamber close to the atmosphere and a second fluid chamber close to the vacuum chamber. The first fluid chamber is vacuumized to have a first pressure, and the second fluid chamber is also vacuumized to have a second pressure which is lower than the first pressure. The first and second fluid chambers work together to enhance the sealing performance of the sealing mechanism.