Abstract:
An electron emission device includes a cathode electrode; a mesh-shaped gate electrode spaced apart from the cathode electrode; a plurality of gate spacers between the cathode electrode and the gate electrode; and a plurality of electron emission sources between the cathode electrode and the gate electrode, and alternating with the plurality of gate spacers.
Abstract:
Described is a micro-fabricated charged particle emission device including a substrate and a plurality of charged particle emission sites formed in the substrate. A path extends between each emission site and a source of liquid metal. Each path is coated with a wetting layer of non-oxidizing metal for wetting the liquid metal. Exemplary non-oxidizing metals that may be used to make the wetting layer include gold and platinum. The wetting layer is sufficiently thin such that some liquid metal is able to flow to each emission site despite any chemical interaction between the liquid metal and the non-oxidizing metal of the wetting layer.
Abstract:
An electron emitter includes a guard electrode 13 on the outer circumferential side of a carbon film structure 10 which is formed on a substrate 7 by plasma CVD method. This guard electrode 13 includes a curved surface portion (a curved surface portion that curves from top toward a side opposite to the film-forming direction) 13a convex in a film-forming direction of the carbon film structure 10. A curvature radius R1 of an outer-circumferential-side portion of the curved surface portion 13a is larger than or equal to a curvature radius R2 of a carbon-film-structure-side portion of the curved surface portion 13a.
Abstract:
An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.
Abstract:
A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer. The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.
Abstract:
An electron beam generator includes a cathode electrode; and a first insulating layer, a gate, a second insulating layer and a focusing gate sequentially on the cathode electrode. The cathode electrode, the first insulating layer, the gate, the second insulating layer and the focusing gate are individually separable from each other and combinable with each other.
Abstract:
Described is a micro-fabricated charged particle emission device including a substrate and a plurality of charged particle emission sites formed in the substrate. A path extends between each emission site and a source of liquid metal. Each path is coated with a wetting layer of non-oxidizing metal for wetting the liquid metal. Exemplary non-oxidizing metals that may be used to make the wetting layer include gold and platinum. The wetting layer is sufficiently thin such that some liquid metal is able to flow to each emission site despite any chemical interaction between the liquid metal and the non-oxidizing metal of the wetting layer.
Abstract:
A method for making a field emission device includes the following steps. An insulative substrate is provided. An electron pulling electrode is formed on the insulative substrate. A secondary electron emission layer is formed on the electron pulling electrode. A first dielectric layer is fabricated. The first dielectric layer has a second opening to expose the secondary electron emission layer. A cathode plate having an electron output portion is provided. An electron emission layer is formed on part surface of the cathode plate. The cathode plate is placed on the first dielectric layer. The electron output portion and the second opening have at least one part overlapped, and at least one part of the electron emission layer is oriented to the secondary electron emission layer via the second opening.
Abstract:
Described is a micro-fabricated charged particle emission device including a substrate and a plurality of charged particle emission sites formed in the substrate. A path extends between each emission site and a source of liquid metal. Each path is coated with a wetting layer of non-oxidizing metal for wetting the liquid metal. Exemplary non-oxidizing metals that may be used to provide the wetting layer include gold and platinum. The wetting layer is sufficiently thin such that some liquid metal is able to flow to each emission site despite any chemical interaction between the liquid metal and the non-oxidizing metal of the wetting layer.
Abstract:
Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.