公开(公告)号：US09382614B2

公开(公告)日：2016-07-05

申请号：US14479207

申请日：2014-09-05

Applicant: Apple Inc.

Inventor： John Z. Zhong ,  Sunggu Kang ,  Wookyung Bae

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/58

CPC classification number: C23C14/5873 ,  C23C14/564 ,  C23C14/5846 ,  H01J37/32449 ,  H01J37/32853 ,  H01J37/32871 ,  H01J37/3476 ,  H01J37/3488

Abstract: Sputter deposition systems and methods for depositing film coatings on one or more substrates are disclosed. The systems and methods are used to prevent or reduce an amount of defects within a deposited film. The methods involve removing defect-related particles that are formed during a deposition process from certain regions of the sputter deposition system and preventing the defect-related particles from detrimentally affecting the quality of the deposited film. In particular embodiments, methods involve creating a flow of gas from a deposition region to a particle collection region the sputter deposition system such that the defect-related particles are entrained within the flow of gas and away from the deposition region. In particular embodiments, the sputter deposition system is a meta-mode sputter deposition system.

Abstract translation: 公开了用于在一个或多个基底上沉积膜涂层的溅射沉积系统和方法。 系统和方法用于防止或减少沉积膜内的缺陷量。 所述方法包括去除在溅射沉积系统的某些区域的沉积过程期间形成的缺陷相关颗粒，并防止缺陷相关颗粒不利地影响沉积膜的质量。 在具体实施方案中，方法包括从沉积区域到溅射沉积系统的颗粒收集区域产生气体流，使得缺陷相关颗粒被夹带在气体流中并远离沉积区域。 在特定实施例中，溅射沉积系统是元模式溅射沉积系统。

公开(公告)号：US20160163556A1

公开(公告)日：2016-06-09

申请号：US14560414

申请日：2014-12-04

Applicant: Lam Research Corporation

Inventor： Joseph Scott Briggs ,  Eric A. Hudson

IPC: H01L21/3065 ,  H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/52 ,  C23C16/50

CPC classification number: H01L21/31116 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32577 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32871 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/30655 ,  H01L27/108 ,  H01L27/115

Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition.

Abstract translation: 本文的各种实施例涉及用于在半导体衬底上的电介质材料中形成凹陷特征的方法，装置和系统。 以循环方式采用分离的蚀刻和沉积操作。 每个蚀刻操作部分地蚀刻该特征。 每个沉积操作在特征的侧壁上形成保护涂层，以防止在蚀刻操作期间电介质材料的横向蚀刻。 保护涂层可以使用沿着侧壁的大致整个长度形成保护涂层的方法进行沉积。 在一些实施方案中，可以使用具有低粘附系数的特定反应物来沉积保护性涂层。 保护涂层也可以使用特定的反应机理沉积，这导致基本上完全的侧壁涂覆。 在一些情况下，使用等离子体辅助原子层沉积或等离子体辅助化学气相沉积来沉积保护涂层。

公开(公告)号：US09095869B2

公开(公告)日：2015-08-04

申请号：US14009647

申请日：2011-04-07

Applicant: Vaino Kilpi ,  Wei-Min Li ,  Timo Malinen ,  Juhana Kostamo ,  Sven Lindfors

Inventor： Vaino Kilpi ,  Wei-Min Li ,  Timo Malinen ,  Juhana Kostamo ,  Sven Lindfors

IPC: H01L21/31 ,  B05C5/00 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01J37/32

CPC classification number: B05C5/001 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32743 ,  H01J37/32871 ,  H01L21/02274

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract translation: 本发明涉及包括操作等离子体原子层沉积反应器的方法，该等离子体原子层沉积反应器被配置为通过顺序的自饱和表面反应在至少一个衬底上的反应室中沉积材料，并且允许来自惰性气体源的气体流入扩展的自由基， 基本上在整个沉积循环期间向反应室开口的进料部分开口。 本发明还涉及相应的装置。

公开(公告)号：US20150144263A1

公开(公告)日：2015-05-28

申请号：US14613219

申请日：2015-02-03

Applicant: Martin RIKER ,  Wei W. WANG

Inventor： Martin RIKER ,  Wei W. WANG

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32724 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32871 ,  H01J2237/0213 ,  H01J2237/0268 ,  H01J2237/2001 ,  H01J2237/335 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67207 ,  Y10T29/49826

Abstract: A substrate heating pedestal for a process chamber for processing substrates is described. The pedestal comprises an annular plate comprising a surface having an array of recesses. A plurality of ceramic balls are each positioned in a recess on the surface of the annular plate to define a substrate receiving surface. A heating element is embedded in the annular plate.

Abstract translation: 描述了用于处理基板的处理室的基板加热基座。 基座包括环形板，其包括具有凹槽阵列的表面。 多个陶瓷球各自定位在环形板的表面上的凹部中以限定基板接收表面。 加热元件嵌入环形板中。

公开(公告)号：US08642128B2

公开(公告)日：2014-02-04

申请号：US12758167

申请日：2010-04-12

Applicant: Dongwon Choi ,  Dong Hyung Lee ,  Tze Poon ,  Manoj Vellaikal ,  Peter Porshnev ,  Majeed Foad

Inventor： Dongwon Choi ,  Dong Hyung Lee ,  Tze Poon ,  Manoj Vellaikal ,  Peter Porshnev ,  Majeed Foad

IPC: C23C16/00

CPC classification number: H01J37/32467 ,  C23C16/4404 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32862 ,  H01J37/32871 ,  H01L21/2236

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，一种用于衬底处理的装置包括具有限定内容积的室主体的处理室; 以及设置在所述室主体的内表面上的含硅涂层，其中所述含硅涂层的外表面为原子上至少35％的硅（Si）。 在一些实施例中，在处理室中形成含硅涂层的方法包括向处理室的内部容积提供包括含硅气体的第一工艺气体; 以及在所述处理室的内表面上形成含硅涂层，其中所述含硅涂层的外表面为至少35％的硅。

公开(公告)号：US20130200170A1

公开(公告)日：2013-08-08

申请号：US13758619

申请日：2013-02-04

Applicant: Green, Tweed of Delaware, Inc.

Inventor： Curtis Marx ,  Jose Luis Gonzalez ,  Giovanni Foggiato ,  Barry Kitazumi

IPC: B05B17/00

CPC classification number: B05B17/00 ,  H01J37/3244 ,  H01J37/32871

Abstract: The invention includes a gas dispersion plate to provide reactant gases to a reaction chamber comprising: a plate body having a first surface and a second surface, the plate body having at least one injection passage that spans the plate from the first surface to the second surface, the distance along the passage from the first surface to the second surface defining the length of the passage, wherein the injection passage includes an ion trap chamber, through which gas flows from the first surface of the plate to the second surface of the plate. In an embodiment, the passage includes an inlet portion interposed between the first surface and the chamber and an outlet portion that is interposed between the ion trap chamber and the second surface.

Abstract translation: 本发明包括一种气体分散板，用于向反应室提供反应气体，包括：板体，其具有第一表面和第二表面，所述板体具有至少一个喷射通道，该喷射通道将板从第一表面跨越到第二表面 沿着从第一表面到第二表面的通道的距离限定通道的长度，其中注入通道包括离子阱室，气体从板的第一表面流过板的第二表面。 在一个实施例中，通道包括插入在第一表面和腔室之间的入口部分和介于离子阱室和第二表面之间的出口部分。

公开(公告)号：US08279577B2

公开(公告)日：2012-10-02

申请号：US12849012

申请日：2010-08-02

Applicant: Andrew Nguyen ,  Wing Lau Cheng ,  Hiroji Hanawa ,  Semyon Kats ,  Kartik Ramaswamy ,  Yan Ye ,  Kwok Manus Wong ,  Daniel J. Hoffman ,  Tetsuya Ishikawa ,  Brian C. Lue

Inventor： Andrew Nguyen ,  Wing Lau Cheng ,  Hiroji Hanawa ,  Semyon Kats ,  Kartik Ramaswamy ,  Yan Ye ,  Kwok Manus Wong ,  Daniel J. Hoffman ,  Tetsuya Ishikawa ,  Brian C. Lue

IPC: H01T23/00

CPC classification number: C23C14/564 ,  C23C16/4404 ,  H01J37/16 ,  H01J37/32504 ,  H01J37/32862 ,  H01J37/32871 ,  H01J2237/022 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T428/24 ,  Y10T428/31678

Abstract: A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.

Abstract translation: 用于衬底处理室的支撑件包括具有衬底接收表面的卡盘，以及包括上壁的基座，该上壁包括凹槽，所述凹槽具有（i）第一深度处的附接面，以及（ii）第二深度处的流体通道 。 下壁位于凹槽中并附着到上壁的附接面，以封闭流体通道。 提供流体入口以将传热流体供应到流体通道和设置用于从流体通道排出传热流体的流体出口。

公开(公告)号：US08134134B2

公开(公告)日：2012-03-13

申请号：US12612990

申请日：2009-11-05

Applicant: Takahiro Murakami

Inventor： Takahiro Murakami

IPC: G21G5/00

CPC classification number: H01J37/32871 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32477

Abstract: In a particle attachment preventing method in a substrate processing apparatus, an electron density control power supplied from the second power supply is adjusted such that an electron density above the substrate gets lower than during a plasma processing, for a preset short period of time after the plasma processing is ended, and a bias power supplied from the first power is maintained for the preset short period of time. The second power supply is a high frequency power supply for supplying a high frequency power having a frequency that is higher than that of the bias power, and in said adjusting of the electron density control power, the high frequency power supplied from the second power supply is lowered as compared with that during the plasma processing.

Abstract translation: 在基板处理装置中的粒子附着防止方法中，调整从第二电源供给的电子密度控制电力，使得基板上方的电子密度低于等离子体处理期间的电子密度，在预定的短时间段之后 等离子体处理结束，并且从预设的短时间段维持从第一功率提供的偏置功率。 第二电源是用于提供具有高于偏置功率的频率的高频功率的高频电源，并且在所述电子密度控制功率的调整中，从第二电源提供的高频功率 与等离子体处理期间相比降低。

公开(公告)号：US08088225B2

公开(公告)日：2012-01-03

申请号：US12641712

申请日：2009-12-18

Applicant: Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

Inventor： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

IPC: C23C16/458 ,  C23C16/00 ,  H01L21/306

CPC classification number: H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Abstract translation: 衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。 衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件 （通过从扩散的掺杂​​剂原子远离衬底背面来抑制自掺杂）。

公开(公告)号：US20110303528A1

公开(公告)日：2011-12-15

申请号：US12853307

申请日：2010-08-10

Applicant: Kun-Ping Huang

Inventor： Kun-Ping Huang

IPC: C23C14/34

CPC classification number: C23C14/3414 ,  C23C14/0623 ,  C23C14/34 ,  H01J37/32871 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3464 ,  H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method and an apparatus for sputtering a film containing high vapor pressure material are provided. The apparatus includes a chamber, a sputtering gun installed in the chamber, a complex target disposed on the sputtering gun, and a substrate holder. The complex target includes a main target and a plurality of pellets, and a material of the pellets is at least one high vapor pressure material that is a material with a vapor pressure greater than 1×10−9 ton at 1000° C. The substrate holder is installed in the chamber opposite to the complex target.

Abstract translation: 提供了一种溅射含有高蒸气压材料的薄膜的方法和装置。 该装置包括一个室，一个安装在该室中的一个溅射枪，一个配置在溅射枪上的复合靶，以及一个衬底保持架。 复合靶包括主要目标和多个颗粒，并且颗粒的材料是至少一种高蒸气压材料，其是在1000℃下蒸气压大于1×10-9吨的材料。基板 支架安装在与复杂目标物相对的腔室中。