公开(公告)号：US20140070730A1

公开(公告)日：2014-03-13

申请号：US14012847

申请日：2013-08-28

Applicant: Advanced Energy Industries, Inc.

Inventor： Hendrik Walde ,  Joshua Brian Pankratz ,  David Christie ,  Brian D. Kowal

IPC: H05H1/24

CPC classification number: H01J37/32944 ,  H01J37/24 ,  H01J37/244 ,  H01J2237/0206 ,  H01J2237/244 ,  H05H1/24 ,  H05H1/36 ,  H05H1/48 ,  H05H2001/3494

Abstract: Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.

Abstract translation: 公开了用于等离子体处理操作中的电弧处理的系统和方法。 该方法包括向第一电压极性的等离子体负载提供电源并为能量存储装置通电，因此当其被通电时，能量存储装置施加相反极性的电压，该极性电压的幅度至少与 第一电压极性。 当检测到电弧时，利用具有与第一电压极性相反的极性的反极性电压从能量存储装置向等离子体负载施加电力，对等离子体负载施加反极性电压降低等级 提供给等离子体负载的电流。

公开(公告)号：US12087544B2

公开(公告)日：2024-09-10

申请号：US17731774

申请日：2022-04-28

Applicant: CENTROTHERM INTERNATIONAL AG

Inventor： Sebastian Hubertus Schulz ,  Thomas Pernau ,  Florian Nachbauer ,  Felix Walk

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32146 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32944 ,  H01J37/3299 ,  H05H1/46

Abstract: A plasma generator and a method for the pulsed provision of electrical power having a frequency of at least 40 KHz to at least two process chambers are described. The plasma generator comprises: a control unit configured to obtain and evaluate process data about processes in the at least two process chambers; a controllable power supply having an output, the controllable power supply being configured to output a direct current at a predetermined voltage and/or intensity at its output in response to a control signal from the control unit; and a switching unit having a first input connected to the output of the power supply and having at least two switching unit outputs for respective connection to one of the at least two process chambers. The switching unit is configured to form, from a direct current at the input, an alternating current having a predetermined frequency of at least 40 KHz as an output signal and to selectively output the output signal as a pulse for a predetermined pulse duration to one of the switching unit outputs in response to a control signal from the control unit. The control unit is configured to coordinate power requirements of the at least two process chambers and to drive the power supply and the switching unit such that at the respective switching unit outputs communicating with the process chambers, substantially the power corresponding to the power requirements is provided as pulses over a period of time, wherein the pulses of the respective process chambers are temporally offset from each other such that the process chambers can be operated simultaneously.

公开(公告)号：US20240234112A1

公开(公告)日：2024-07-11

申请号：US18572075

申请日：2022-07-01

Applicant: Lam Research Corporation

Inventor： Michal Danek ,  Benjamin Allen Haskell ,  Kapu Sirish Reddy ,  David Badt ,  Brian Joseph Williams ,  Paul Franzen ,  Karl Frederick Leeser ,  Jennifer Leigh Petraglia ,  Yukinori Sakiyama ,  Kapil Sawlani

IPC: H01J37/32 ,  G06T7/00 ,  H01L21/67

CPC classification number: H01J37/32972 ,  G06T7/0004 ,  H01J37/32926 ,  H01J37/32981 ,  H01J37/3299 ,  H01L21/67248 ,  H01L21/67253 ,  H01J37/32944 ,  H01J2237/221 ,  H01J2237/3321 ,  H01J2237/3341

Abstract: Multi-pixel sensors such as camera sensors may be configured to capture two-dimensional and/or three-dimensional images of the interior of a process chamber or other fabrication tool. The sensors may be configured to capture pixelated electromagnetic radiation intensity information from within the interior of such process chamber before, during, and/or after processing of a substrate in the chamber. Such sensors may also be utilized for control, predictive, and/or diagnostic applications.

公开(公告)号：US11894250B2

公开(公告)日：2024-02-06

申请号：US16836639

申请日：2020-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Yu Wang

IPC: H01L21/67 ,  G06T1/00 ,  G06T7/00 ,  H01J37/32

CPC classification number: H01L21/67253 ,  G06T1/0014 ,  G06T7/0004 ,  H01J37/32944 ,  H01L21/67017 ,  H01L21/67288 ,  G06T2207/10016 ,  G06T2207/20081 ,  H01J2237/24507

Abstract: A plasma discharge detection system detects undesirable plasma discharge events within a semiconductor process chamber. The plasma discharge detection system includes one or more cameras positioned around the semiconductor process chamber. The cameras capture images from within the semiconductor process chamber. The plasma discharge detection system includes a control system that receives the images from the cameras. The control system analyzes the images and detects plasma discharge within the semiconductor process chamber based on the images. The control system can adjust a semiconductor process in real time responsive to detecting the plasma discharge.

公开(公告)号：US10002748B2

公开(公告)日：2018-06-19

申请号：US14610572

申请日：2015-01-30

Applicant: Applied Materials, Inc.

Inventor： Ilias Iliopoulos ,  Shuo Na ,  Kelby Yancy ,  Chunsheng Chen

IPC: G06F11/30 ,  H01J37/32 ,  C23C16/52 ,  C23C16/505 ,  G21C17/00

CPC classification number: H01J37/32935 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32174 ,  H01J37/32944 ,  H01J37/3299

Abstract: The present invention generally relates to a method for detecting the breakage of one or more grounding straps without stopping processing or opening the processing chamber for inspection. In one embodiment, a method for detecting grounding strap breakage in a processing chamber includes monitoring real-time RF related data from plasma generated in the processing chamber. The method also includes comparing the real-time RF related data with a pre-determined threshold RF related data. The method includes generating an alert if the real-time RF related data meets or exceeds the pre-determined threshold RF related data. In one embodiment, the RF related data includes RF frequency, direct current voltage, voltage peak-to-peak, and/or RF reflected power.

公开(公告)号：US09953888B1

公开(公告)日：2018-04-24

申请号：US15379958

申请日：2016-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Wei Fang ,  Yao-Fong Dai ,  Chih-Tung Lo ,  Ming-Hsien Tsai ,  Kai-Wen Wu

IPC: H01L21/66 ,  H01F27/28 ,  H02M7/04 ,  G01R29/08 ,  H01L21/02 ,  C23C16/505

CPC classification number: H01L22/26 ,  C23C16/505 ,  G01R29/0878 ,  H01F27/28 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32944 ,  H01J37/3299 ,  H01L21/02274

Abstract: An electromagnetic detection device is provided. The electromagnetic detection device includes an induction coil, a converter, and a controller. The induction coil is utilized to sense an RF signal and generate a sensing RF signal by electromagnetic induction of the induction coil which is proportional to the RF signal. The RF signal is transmitted to a shower head to perform a semiconductor process on a wafer for manufacturing an IC in association with the RF signal. The converter is utilized to convert the sensing RF signal into a DC signal. The controller is utilized to determine whether the semiconductor process is normal or abnormal according to the DC signal during the semiconductor process. The semiconductor process will be terminated when the semiconductor process is determined as abnormal.

公开(公告)号：US09653269B2

公开(公告)日：2017-05-16

申请号：US14459152

申请日：2014-08-13

Applicant: Applied Materials, Inc.

Inventor： Shuo Na ,  Kelby Yancy ,  Chunsheng Chen ,  Ilias Iliopoulos

IPC: G01R31/02 ,  H01J37/32 ,  G01R31/24 ,  G01R31/12

CPC classification number: H01J37/32944 ,  G01R31/12 ,  G01R31/245 ,  H01J2237/0225 ,  H01J2237/24592

Abstract: A method and apparatus for detecting substrate arcing and breakage within a processing chamber is provided. A controller monitors chamber data, e.g., parameters such as RF signals, voltages, and other electrical parameters, during operation of the processing chamber, and analyzes the chamber data for abnormal spikes and trends. Using such data mining and analysis, the controller can detect broken substrates without relying on glass presence sensors on robots, but rather based on the chamber data.

公开(公告)号：US20170077002A1

公开(公告)日：2017-03-16

申请号：US15362706

申请日：2016-11-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Scott Singlevich ,  Kommisetti Subrahmanyam ,  Tony Davis ,  Michael Johnson

IPC: H01L21/66 ,  H01J37/32 ,  G01R31/02 ,  H01L21/67

CPC classification number: H01L22/20 ,  G01R31/024 ,  G01R31/08 ,  G06F17/00 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32944 ,  H01J2237/3321 ,  H01L21/67253 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for accurate arc detection in semiconductor manufacturing tools are disclosed. Such methods and systems provide real-time arc detection and near real-time notification for corrective actions during a semiconductor manufacturing process. Such methods and systems utilize data with high sample rate and wavelet analysis to provide for more accurate arc detection, which leads to more effective and cost efficient semiconductor manufacturing operations.

Abstract translation: 公开了用于半导体制造工具中的精确电弧检测的方法和系统。 这样的方法和系统在半导体制造过程中提供实时电弧检测和近实时通知以用于校正动作。 这种方法和系统利用具有高采样率和小波分析的数据来提供更准确的电弧检测，这导致更有效和成本有效的半导体制造操作。

公开(公告)号：US20160268108A1

公开(公告)日：2016-09-15

申请号：US13395878

申请日：2010-08-12

Applicant: Verity Instruments, Inc.

Inventor： Stephen DANIELS ,  Shane Glynn ,  Felipe Soberon ,  Paul Maguire

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065

CPC classification number: H01J37/32944 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/3065 ,  H01L22/14

Abstract: A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling RF voltage and current signals from the RF transmission line; processing the detected modulated light and the RF signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing.

Abstract translation: 一种用于监测在半导体晶片，表面或表面上执行的等离子体工艺的至少一个工艺参数的方法，并且确定在等离子体工具室内发生的电弧事件。 该方法包括以下步骤：在等离子体处理期间检测由等离子体鞘产生的调制光; 从RF传输线采样RF电压和电流信号; 处理检测到的调制光和RF信号以产生用于等离子体处理的至少一个监视器统计量，并且处理监视信号以确定晶片处理期间电弧事件的发生。

公开(公告)号：US09263241B2

公开(公告)日：2016-02-16

申请号：US13104762

申请日：2011-05-10

Applicant: Skip B. Larson ,  Kenneth E. Nauman

Inventor： Skip B. Larson ,  Kenneth E. Nauman

IPC: C23C16/00 ,  H01J37/32

CPC classification number: H01J37/32944 ,  H01J37/32064 ,  H01J37/3299

Abstract: This disclosure describes systems, methods, and apparatuses for extinguishing electrical arcs in a plasma processing chamber. Once an arc is detected, the steady state voltage provided to the plasma processing chamber can be reduced, and the current being provided to the chamber decays below a steady state value as the arc is extinguished. When the current falls to or below a current threshold, the voltage can be ramped back up bringing the voltage and current back to steady state values. This technique enables power to return to a steady state level faster than traditional arc mitigation techniques.

Abstract translation: 本公开描述了用于在等离子体处理室中熄灭电弧的系统，方法和装置。 一旦检测到电弧，可以减小提供给等离子体处理室的稳态电压，并且当电弧熄灭时，提供给室的电流衰减到低于稳态值。 当电流下降到或低于电流阈值时，可以将电压反斜坡，使电压和电流恢复到稳定状态值。 这种技术使电源能够比传统的电弧缓解技术更快地恢复到稳定状态。