公开(公告)号：US20240047247A1

公开(公告)日：2024-02-08

申请号：US18184418

申请日：2023-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chansoo KANG ,  Daewon KANG ,  Sangki NAM ,  Jungmo YANG ,  Changsoon LIM ,  Sungho JANG ,  Jonghun PI ,  Youngil KANG ,  Yoonjae KIM ,  Ilwoo KIM ,  Jongmu KIM ,  Yongbeom PARK

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67253 ,  H01J37/32944 ,  H01J2237/221

Abstract: A semiconductor process device includes a chamber housing defining an internal region and a plurality of electrostatic chucks within the internal region. The chamber housing includes a window, and a light collection unit including a first optical system and a second optical system located at different positions on the window. A plurality of first optical pickup units are connected to the first optical system, and a plurality of second optical pickup units are connected to the second optical system. A sensor includes a plurality of photodetectors that are configured to convert a first optical signal transmitted by the plurality of first optical pickup units and a second optical signal transmitted by the plurality of second optical pickup units into electrical signals. A processor is configured to generate a spatial image of the internal region of the chamber housing using the electrical signals output by the plurality of photodetectors, and determine a location at which an arc occurs in the internal region of the chamber housing based on the spatial image.

公开(公告)号：US20180202945A1

公开(公告)日：2018-07-19

申请号：US15839583

申请日：2017-12-12

Applicant: Renesas Electronics Corporation

Inventor： Naoto KANZAKI ,  Kotaro Horikoshi ,  Toru Shinaki

IPC: G01N21/956 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/683 ,  H01L21/687 ,  H01L21/764

CPC classification number: G01N21/956 ,  C23C16/56 ,  H01J37/32577 ,  H01J37/32715 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32944 ,  H01L21/3065 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/687 ,  H01L21/764 ,  H05H1/46 ,  H05H2001/4675

Abstract: A semiconductor manufacturing apparatus includes: an electrostatic chuck that is installed in a chamber and over which a semiconductor wafer to be subjected to plasma processing is to be mounted; and an observation device for observing a change in a signal waveform occurring in the electrostatic chuck during the plasma processing. The observation device determines abnormal discharge in a processing chamber based on a change pattern of the signal waveform.

公开(公告)号：US10002749B2

公开(公告)日：2018-06-19

申请号：US14742960

申请日：2015-06-18

Applicant: TRUMPF Huettinger GmbH + Co. KG

Inventor： Andre Grede ,  Daniel Krausse ,  Anton Labanc ,  Christan Thome ,  Alberto Pena Vidal

IPC: H01J37/32

CPC classification number: H01J37/32944 ,  H01J37/32064 ,  H01J37/3299

Abstract: An arc extinguishing method for extinguishing arcs in a plasma chamber of a plasma system, comprising providing a plasma operating power during a plasma operation to the plasma chamber for generating plasma in the plasma chamber and carrying out a plasma-processing process using the generated plasma, by generating an analog signal by a digital-to-analog converter (DAC) and amplifying the generated analog signal on an amplifier path, monitoring, by an arc detection device, the plasma system for arcs, and in response to detecting an occurrence of an arc, controlling the DAC by the arc detection device such that the generated analog signal by the DAC is modified.

公开(公告)号：US20170278665A1

公开(公告)日：2017-09-28

申请号：US15495513

申请日：2017-04-24

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Victor Brouk ,  Daniel J. Hoffman

IPC: H01J37/08 ,  H01J37/32 ,  G01N27/06

CPC classification number: H01J37/08 ,  G01N27/06 ,  H01J37/32944 ,  H01J37/3299

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

公开(公告)号：US09673028B2

公开(公告)日：2017-06-06

申请号：US15095745

申请日：2016-04-11

Applicant: Advanced Energy Industries, Inc.

Inventor： Hendrik Walde ,  Joshua Brian Pankratz ,  David Christie ,  Brian D. Kowal

IPC: G05F1/00 ,  H01J37/32 ,  H05H1/24 ,  H05H1/36 ,  H05H1/48 ,  H01J37/24 ,  H01J37/244 ,  H05H1/34

CPC classification number: H01J37/32944 ,  H01J37/24 ,  H01J37/244 ,  H01J2237/0206 ,  H01J2237/244 ,  H05H1/24 ,  H05H1/36 ,  H05H1/48 ,  H05H2001/3494

Abstract: Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.

公开(公告)号：US20160343549A1

公开(公告)日：2016-11-24

申请号：US15230017

申请日：2016-08-05

Applicant: TRUMPF HUETTINGER SP. Z O.O.

Inventor： Andrzej Gieraltowski ,  Adam Grabowski ,  Piotr Lach ,  Marcin Zelechowski

IPC: H01J37/32 ,  G01R19/165

CPC classification number: H01J37/32944 ,  G01R19/165 ,  H01J37/32128 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935

Abstract: Systems and methods of monitoring a discharge in a plasma process are disclosed. The methods include supplying the plasma process with a periodic power supply signal, determining a first signal waveform in a first time interval within a first period of the power supply signal, determining a second signal waveform in a second time interval within a second period of the power supply signal, the second time interval being at a position within the second period corresponding to a position of the first time interval within the first period, comparing the second signal waveform with a reference signal waveform to obtain a first comparison result, determining that the first comparison result corresponds to a given first comparison result, and in response, time-shifting one of the second signal waveform and the reference signal waveform, and comparing the time-shifted signal waveform with the non-time-shifted signal waveform to obtain a second comparison result.

Abstract translation: 公开了在等离子体工艺中监测放电的系统和方法。 所述方法包括向等离子体处理提供周期性电源信号，在电源信号的第一周期内以第一时间间隔确定第一信号波形，在第二时间间隔内在第二时间段内确定第二信号波形 电源信号，所述第二时间间隔处于与所述第一时段内的所述第一时间间隔的位置对应的所述第二时段内的位置，将所述第二信号波形与参考信号波形进行比较，以获得第一比较结果， 第一比较结果对应于给定的第一比较结果，并且作为响应，对第二信号波形和参考信号波形中的一个进行时移，并且将时移信号波形与非时移信号波形进行比较，以获得 第二个比较结果。

公开(公告)号：US20160141155A1

公开(公告)日：2016-05-19

申请号：US15002213

申请日：2016-01-20

Applicant: Advanced Energy Industries, Inc.

Inventor： Skip B. Larson ,  Kenneth E. Nauman, JR.

IPC: H01J37/32

CPC classification number: H01J37/32944 ,  H01J37/32064 ,  H01J37/3299

Abstract: This disclosure describes systems, methods, and apparatuses for extinguishing electrical arcs in a plasma processing chamber. Once an arc is detected, the steady state voltage provided to the plasma processing chamber can be reduced, and the current being provided to the chamber decays below a steady state value as the arc is extinguished. When the current falls to or below a current threshold, the voltage can be ramped back up bringing the voltage and current back to steady state values. This technique enables power to return to a steady state level faster than traditional arc mitigation techniques.

Abstract translation: 本公开描述了用于在等离子体处理室中熄灭电弧的系统，方法和装置。 一旦检测到电弧，可以减小提供给等离子体处理室的稳态电压，并且当电弧熄灭时，提供给室的电流衰减到低于稳态值。 当电流下降到或低于电流阈值时，可以将电压反斜坡，使电压和电流恢复到稳定状态值。 这种技术使电源能够比传统的电弧缓解技术更快地恢复到稳定状态。

公开(公告)号：US08890537B2

公开(公告)日：2014-11-18

申请号：US12764145

申请日：2010-04-21

Applicant: John Valcore, Jr. ,  Yufeng Han ,  Jonathan Smyka ,  Salvatore Polizzo ,  Aaron T. Radomski

Inventor： John Valcore, Jr. ,  Yufeng Han ,  Jonathan Smyka ,  Salvatore Polizzo ,  Aaron T. Radomski

IPC: H01J37/00 ,  H05H1/00 ,  H01J37/32

CPC classification number: H05H1/0062 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32944 ,  H01J2237/0206

Abstract: An arc detection system includes a radio frequency (RF) signal probe that senses a RF signal at an input of a RF plasma chamber and that generates a signal based on at least one of the voltage, current, and power of the RF signal. A signal analyzer receives the signal, monitors the signal for frequency components that have a frequency greater than or equal to a fundamental frequency of the RF signal, and generates an output signal based on the frequency components. The output signal indicates that an arc is occurring in the RF plasma chamber.

Abstract translation: 电弧检测系统包括射频（RF）信号探针，其感测RF等离子体室的输入处的RF信号，并且基于RF信号的电压，电流和功率中的至少一个产生信号。 信号分析仪接收信号，对频率分量的信号进行监视，频率成分的频率大于或等于RF信号的基频，并根据频率成分产生输出信号。 输出信号表示在等离子体室内发生电弧。

公开(公告)号：US20140231389A1

公开(公告)日：2014-08-21

申请号：US14183723

申请日：2014-02-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi Nagami ,  Norikazu Yamada ,  Tadashi Gondai ,  Kouichi Yoshida

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32706 ,  H01J37/32944

Abstract: At a first timing after mounting a semiconductor wafer W on an electrostatic chuck 38, a susceptor 12 is switched from an electrically grounded state into a floated state. From a second timing after the first timing, a second high frequency power HF for plasma generation is applied to the susceptor 12, and a processing gas is excited into plasma in a chamber 10. From a third timing after the second timing, a first high frequency power LF for ion attraction is applied to the susceptor 12, and a self-bias (−Vdc) is generated. From a fourth timing close to the third timing, a negative second DC voltage −BDC corresponding to the self-bias (−Vdc) is applied to the susceptor 12. From the fifth timing after the fourth timing, a positive first DC voltage ADC is applied to an inner electrode 42 of the electrostatic chuck 38.

Abstract translation: 在将半导体晶片W安装在静电卡盘38上的第一定时，基座12从电接地状态切换到浮动状态。 从第一定时之后的第二时刻开始，对基座12施加用于等离子体产生的第二高频功率HF，并将处理气体激发到室10内的等离子体。从第二定时以后的第三时刻开始，第一高 对基座12施加用于离子吸引的频率功率LF，产生自偏压（-Vdc）。 从靠近第三定时的第四定时，将与自偏压（-Vdc）相对应的负的第二直流电压-BDC施加到基座12.从第四定时之后的第五定时，正的第一直流电压ADC为 施加到静电卡盘38的内部电极42。

公开(公告)号：US20140209453A1

公开(公告)日：2014-07-31

申请号：US14144844

申请日：2013-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Su JUN ,  TaeRang KIM ,  Jino PARK

IPC: H01J37/32 ,  G01J1/44

CPC classification number: H01J37/32944 ,  H01J37/32972

Abstract: A method for predicting plasma micro-arcing includes obtaining a spectrum signal in a given plasma process, classifying an optical intensity of the spectrum signal into soft and hard arcing events according to an amplitude of the optical intensity of the spectrum signal, separately counting a number of occurrences of the soft arcing event in a given unit time, comparing the number of occurrences of the soft arcing event during the given unit time with the number of occurrences of the soft arcing event during a previous unit time, and determining that a number of occurrences of the hard arcing event will increase during a next unit time subsequent to the given unit time, when the number of occurrences of the soft arcing event during the given unit time increases in comparison with the number of occurrences of the soft arcing event during the previous unit time.

Abstract translation: 用于预测等离子体微电弧的方法包括：在给定的等离子体处理中获得频谱信号，根据频谱信号的光强度的幅度将频谱信号的光强度分类为软和硬电弧事件，分别计数一个数 在给定单位时间内发生软电弧事件的发生，将给定单位时间内的软起弧事件的发生次数与在前一个单位时间内的软起弧事件的发生次数进行比较，并且确定多个 在给定单位时间之后的下一个单位时间内，当给定单位时间内的软起弧事件的发生次数与在此期间的软起弧事件的发生次数相比时，硬电弧事件的发生将增加。 单位时间。