公开(公告)号：US11437217B2

公开(公告)日：2022-09-06

申请号：US17332114

申请日：2021-05-27

Applicant: IMEC VZW

Inventor： Eric Vancoille ,  Niels Bosman ,  Patrick Carolan

IPC: H01J37/00 ,  H01J37/26 ,  G01N1/32

Abstract: A method for preparing a sample for transmission electron microscopy (TEM) comprises providing a substrate having a patterned area on its surface that is defined by a particular topography. A conformal layer of contrasting material is deposited on the topography by depositing a layer of the contrasting material on a local target area of the substrate, spaced apart from the patterned area via Electron Beam Induced Deposition (EBID). The deposition parameters, the thickness of the layer deposited in the target area, and the distance of the target area to the patterned area are selected so that a conformal layer of the contrasting material is formed on the topography of the patterned area. A protective layer is subsequently deposited. The protective layer does not damage the topography in the patterned area because the patterned area is protected by the conformal layer.

公开(公告)号：US11264205B2

公开(公告)日：2022-03-01

申请号：US17093468

申请日：2020-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Eric Donald Wilson ,  George Gammel

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/256 ,  H01J37/244 ,  H01J37/304

Abstract: A method, including using an implant recipe to perform an implant by scanning an ion beam along a first axis over a substrate, coated with a photoresist layer, while the substrate is scanned along a perpendicular axis; measuring an implant current (I) during the implant, using a first detector, positioned to a side of a substrate position; determining a value of a difference ratio (I−B)/(B), based upon the implant current, where B is current measured by the first detector, during a calibration at base pressure; determining a plurality of values of a current ratio (CR) for the plurality of instances, based upon the difference ratio, the current ratio being a ratio of the implant current to a current measured by a second detector, positioned over the substrate position, during the calibration; and adjusting scanning the ion beam, scanning of the substrate, or a combination thereof, based upon the current ratio.

公开(公告)号：US11244807B2

公开(公告)日：2022-02-08

申请号：US17102551

申请日：2020-11-24

Applicant: NuFlare Technology, Inc.

Inventor： Tomoo Motosugi

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/20 ,  H01J37/147 ,  H01J37/302

Abstract: In one embodiment, a settling time determination method includes deflecting a charged particle beam by applying a voltage outputted from an amplifier to a first deflector while changing a deflection settling time, and writing an evaluation pattern, measuring a position of the evaluation pattern, and determining a position displacement amount of the measured position from a design position, performing fitting of the position displacement amount for the deflection settling time on a first output waveform of the amplifier, and determining a deflection settling time in which the position displacement amount is within a predetermined range.

公开(公告)号：US11239053B2

公开(公告)日：2022-02-01

申请号：US17002472

申请日：2020-08-25

Applicant: Carl Zeiss MultiSEM GmbH

Inventor： Dirk Zeidler

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/145 ,  H01J37/147 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28

Abstract: Charged particle beam systems and methods, such as a multi beam charged particle beam system and related methods, can compensate sample charging.

公开(公告)号：US11177114B1

公开(公告)日：2021-11-16

申请号：US17022078

申请日：2020-09-15

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Matthias Firnkes ,  Florian Lampersberger ,  Carlo Salvesen

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/09 ,  H01J37/244 ,  H01J37/12

Abstract: An electrode arrangement for acting on a charged particle beam in a charged particle beam apparatus is described. The electrode arrangement includes a first electrode with a first opening for the charged particle beam; a first spacer element positioned in a first recess provided in the first electrode on a first electrode side for aligning the first electrode relative to a second electrode, the first spacer element having a first blind hole; a first conductive shield provided in the first blind hole; and a contact assembly protruding from the first electrode into the first blind hole for ensuring an electrical contact between the first electrode and the first conductive shield. Further, a contact assembly for such an electrode arrangement, a charged particle beam device with such an electrode arrangement, as well as a method of reducing an electrical field strength in an electrode arrangement are described.

公开(公告)号：US11127561B2

公开(公告)日：2021-09-21

申请号：US17069915

申请日：2020-10-14

Applicant: JEOL Ltd.

Inventor： Masashi Shimizu

IPC: H01J37/00 ,  H01J37/26 ,  F28F3/12

Abstract: A secondary storage container is a member which surrounds a primary storage container. A vaporized coolant generated in a primary storage space flows into and is stored in the secondary storage container. Radiant heat is blocked by the secondary storage container in a cooled state. Heat transferred to the primary storage container is reduced by a heat conducting path including the secondary storage container.

公开(公告)号：US11120973B2

公开(公告)日：2021-09-14

申请号：US16409242

申请日：2019-05-10

Applicant: APPLIED Materials, Inc.

Inventor： Vikram M. Bhosle ,  Christopher J. Leavitt ,  Guillermo Colom ,  Timothy J. Miller

IPC: H01J37/00 ,  H01J37/32 ,  H01L21/265 ,  C23C14/48 ,  H01J37/317

Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

公开(公告)号：US11049737B2

公开(公告)日：2021-06-29

申请号：US16166614

申请日：2018-10-22

Applicant: SEMES CO., LTD.

Inventor： Jinwoo Sim ,  Hyung Joon Kim

IPC: H01L21/67 ,  H01J37/00

Abstract: Disclosed is An apparatus for treating a substrate includes a chamber having a treatment space provided therein to treat the substrate and having an entrance for introducing or withdrawing the substrate, a liner disposed in the treatment space, disposed adjacent to an inner sidewall of the chamber, and having an opening formed at a position of facing the entrance to introduce or withdraw the substrate, a supporting unit to support the substrate in the treatment space, a gas supplying unit to supply process gas to the treatment space, a plasma source to produce plasma from the process gas, and a door assembly to open or close the entrance. The door assembly includes a door which includes a door unit provided outside the chamber to be movable between an opening position to open the entrance and a closing position to close the entrance, and an insertion unit extending from the door unit toward the treatment space and inserted into the opening of the liner at the closing position, and a door driving unit to drive the door.

公开(公告)号：US10957779B2

公开(公告)日：2021-03-23

申请号：US16158141

申请日：2018-10-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen Lo ,  Jung-Hao Chang ,  Li-Te Lin ,  Pinyen Lin

IPC: H01L21/8234 ,  H01L21/3213 ,  H01L21/311 ,  H01L27/088 ,  H01L29/66 ,  H01L29/423 ,  H01L29/51 ,  H01J37/00 ,  H01L29/78 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/28 ,  H01L21/67 ,  H01L29/49 ,  H01L21/84 ,  H01L29/165 ,  H01L27/12

Abstract: A method includes following steps. First and second gate electrodes are formed over a substrate, with an ILD layer between the first and second gate electrodes. A first etch operation is performed to etch the first and second gate electrodes. A sacrificial layer is formed across the etched first and second gate electrodes and the ILD layer. A second etch operation is performed to etch the sacrificial layer and the etched the first and second gate electrodes.

公开(公告)号：US20210050222A1

公开(公告)日：2021-02-18

申请号：US17084938

申请日：2020-10-30

Applicant: Tokyo Electron Limited

Inventor： Takayuki Katsunuma

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/3213 ,  H01J37/00

Abstract: Etching stop which is caused by a metal released from a metal-containing mask can be avoided. A plasma etching method includes a protective film forming process of forming a protective film on a metal-containing film, which is formed on an etching target film and provided with a preset opening pattern, by a first processing gas; and an etching process of etching the etching target film by plasma generated from a second processing gas while using, as a mask, the metal-containing film on which the protective film is formed.