公开(公告)号：US07045466B2

公开(公告)日：2006-05-16

申请号：US10607838

申请日：2003-06-27

Applicant: Kanakasabapathi Subramanian ,  Xiaojun T. Huang ,  Noel C. MacDonald

Inventor： Kanakasabapathi Subramanian ,  Xiaojun T. Huang ,  Noel C. MacDonald

IPC: H01L21/302

CPC classification number: B81C1/00626 ,  B81B2201/033 ,  H01L21/3086

Abstract: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.

Abstract translation: 通过首先形成不同宽度的线或结构的图案，在半导体衬底中形成多层结构。 图案上的宽度信息通过处理步骤被解码成级信息以形成MEMS结构。 蚀刻图案以形成具有一层的结构。 结构被氧化，直到较薄宽度的结构基本上被完全氧化。 然后蚀刻一部分氧化物以露出第一层。 然后蚀刻第一层以形成二楼。 然后任选地除去氧化物，留下多层结构。 在一个实施例中，使用多层结构工艺形成高纵横比梳状致动器。

公开(公告)号：US07031041B2

公开(公告)日：2006-04-18

申请号：US11053880

申请日：2005-02-10

Applicant: Xiaoyu Mi ,  Osamu Tsuboi ,  Satoshi Ueda ,  Ippei Sawaki

Inventor： Xiaoyu Mi ,  Osamu Tsuboi ,  Satoshi Ueda ,  Ippei Sawaki

IPC: G02B26/08

CPC classification number: G02B26/0841 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81B2203/0109 ,  B81B2203/0154 ,  B81B2203/058

Abstract: A micro-oscillating element is provided with a frame (113) and a oscillating member (111) connected with the frame (113) via a connector (112). Each connector (112) includes two torsion bars (112a), each torsion bar (112a) being constructed so that the rigidity becomes relatively high toward the frame (113) and relatively low toward the oscillating member (111) by forming a plurality of holes (112b).

Abstract translation: 微振动元件设置有经由连接器（112）与框架（113）连接的框架（113）和摆动构件（111）。 每个连接器（112）包括两个扭杆（112a），每个扭杆（112a）被构造成使得刚性通过形成多个相对于框架（113）而相对较低朝着摆动构件（111）变得相对较高 的孔（112b）。

公开(公告)号：US07012322B2

公开(公告)日：2006-03-14

申请号：US10746219

申请日：2003-12-22

Applicant: Jeffrey A. Ridley ,  James A. Neus

Inventor： Jeffrey A. Ridley ,  James A. Neus

IPC: H01L23/495

CPC classification number: B81C1/00698 ,  B81B2201/0271 ,  B81B2201/033 ,  B81C2201/0132

Abstract: Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch-buffers, liberating and removing one or more sacrificial etch-buffers prior to wafer bonding, bonding the etched wafer substrate to an underlying support substrate, and etching away the wafer substrate. In some embodiments, the sacrificial etch-buffers are removed after bonding the wafer to the support substrate. The sacrificial etch-buffers can be provided at one or more selective regions to provide greater uniformity in etch rate during etching. A comb drive device in accordance with an illustrative embodiment can include a number of interdigitated comb fingers each having a more uniform profile along their length and/or at their ends, producing less harmonic distortion during operation.

Abstract translation: 公开了使用一个或多个牺牲蚀刻缓冲器制造梳状驱动装置的方法。 示例性的制造方法可以包括以下步骤：将图案蚀刻到限定一个或多个梳状驱动元件和牺牲蚀刻缓冲器的晶片衬底上，在晶片接合之前释放和去除一个或多个牺牲蚀刻缓冲器，将蚀刻的晶片衬底接合到 底层支撑衬底，并蚀刻掉晶片衬底。 在一些实施例中，在将晶片接合到支撑衬底之后去除牺牲蚀刻缓冲器。 可以在一个或多个选择性区域处提供牺牲蚀刻缓冲器，以在蚀刻期间提供更大的蚀刻速率均匀性。 根据说明性实施例的梳状驱动装置可以包括多个交叉指状梳，每个梳指在其长度和/或其端部具有更均匀的轮廓，在操作期间产生较少的谐波失真。

公开(公告)号：US06947188B2

公开(公告)日：2005-09-20

申请号：US10392594

申请日：2003-03-18

Applicant: Robin R. Miles ,  Alexandros P. Papavasiliou

Inventor： Robin R. Miles ,  Alexandros P. Papavasiliou

IPC: B81B3/00 ,  G02B26/08

CPC classification number: B81B3/0037 ,  B81B2201/033 ,  B81B2201/042 ,  B81B2203/0109 ,  B81B2203/0136 ,  B81B2203/053 ,  G02B26/0841 ,  G02B26/0866

Abstract: A mirror pixel that can be fabricated using standard MEMS methods for a deformable mirror. The pixel is electrostatically actuated and is capable of the high deflections needed for spaced-based mirror applications. In one embodiment, the mirror comprises three layers, a top or mirror layer, a middle layer which consists of flexures, and a comb drive layer, with the flexures of the middle layer attached to the mirror layer and to the comb drive layer. The comb drives are attached to a frame via spring flexures. A number of these mirror pixels can be used to construct a large mirror assembly. The actuator for the mirror pixel may be configured as a crenellated beam with one end fixedly secured, or configured as a scissor jack. The mirror pixels may be used in various applications requiring high stroke adaptive optics.

Abstract translation: 可以使用用于可变形反射镜的标准MEMS方法制造的镜像素。 像素被静电驱动，并且能够实现基于间隔镜的应用所需的高偏转。 在一个实施例中，反射镜包括三层，顶层或镜层，由弯曲构成的中间层，以及梳状驱动层，中间层的弯曲部连接到镜层和梳状驱动层。 梳子驱动器通过弹簧弯曲连接到框架。 这些反射镜像素中的许多可用于构造大镜组件。 用于镜像素的致动器可以被配置为具有一端固定地固定或被配置为剪刀式千斤顶的带锯齿形梁。 镜像素可以用于需要高冲程自适应光学器件的各种应用中。

公开(公告)号：US20050002084A1

公开(公告)日：2005-01-06

申请号：US10142821

申请日：2002-05-09

Applicant: Chang Wan

Inventor： Chang Wan

IPC: B81B3/00 ,  B81B7/02 ,  G02B26/08 ,  G02B26/00

CPC classification number: G02B26/0841 ,  B81B3/0035 ,  B81B2201/033 ,  B81B2201/045 ,  B81B2203/058

Abstract: The present invention is related to a novel micro-electro-mechanical systems (MEMS) torsional drive that is capable of tilting suspended structure such as a micro-mirror for steering light beams in three-dimensional analog fashion, which is suitable for high port count optical switches. The torsional drive has the advantages of allowing large tilt angle, having low drive voltage, and capable of providing a feedback signal for closed-loop control.

Abstract translation: 本发明涉及一种新颖的微电机械系统（MEMS）扭转驱动器，其能够倾斜诸如用于以三维模拟方式转向光束的微镜等悬置结构，适用于高端口数 光开关。 扭转驱动器具有允许具有低驱动电压的大倾斜角度并且能够提供用于闭环控制的反馈信号的优点。

公开(公告)号：US20040232502A1

公开(公告)日：2004-11-25

申请号：US10839844

申请日：2004-05-06

Applicant: Walsin Lihwa Corporation

Inventor： Jerwei Hsieh ,  Huai-Yuan Chu ,  Julius Ming-Lin Tsai ,  Weileun Fang

IPC: H01L031/072

CPC classification number: H02N1/008 ,  B81B2201/033 ,  B81C1/00595 ,  Y10S438/942

Abstract: A high-aspect-ratio-microstructure (HARM) is provided. The structure includes: a substrate; a lower structure with a comb shape fixedly mounted on said substrate and having first plural comb fingers, wherein each of the first plural comb fingers has a thin slot thereon; an upper structure with a comb shape having second plural comb fingers, wherein the lower structure and the upper structure have a height difference therebetween so as to form an uneven surface; and a lateral strengthening structure formed at vertically peripheral walls of the first plural comb fingers and the second plural comb fingers for protecting the plural first and second comb fingers.

Abstract translation: 提供了高纵横比微结构（HARM）。 该结构包括：基底; 具有固定地安装在所述基板上并具有第一多个梳齿的梳形的下部结构，其中所述第一多个梳齿中的每一个在其上具有薄的狭槽; 具有梳形的具有第二多个梳齿的上部结构，其中下部结构和上部结构之间具有高度差以形成不平坦表面; 以及形成在第一多个梳齿的垂直周壁上的横向加强结构和用于保护多个第一和第二梳齿的第二多个梳齿。

公开(公告)号：US20040232110A1

公开(公告)日：2004-11-25

申请号：US10839990

申请日：2004-05-06

Applicant: Walsin Lihwa Corporation

Inventor： Jerwei Hsieh ,  Huai-Yuan Chu ,  Julius Ming-Lin Tsai ,  Weileun Fang

IPC: C23F001/00

CPC classification number: H02N1/008 ,  B81B2201/033 ,  B81C1/00595 ,  Y10S438/942

Abstract: A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom portion of the lateral strengthening structure, and a part of the substrate by an etching process so as to form a lower structure and expose an unstrengthened structure; and (f) etching the unstrengthened structure laterally so as to form an upper structure.

Abstract translation: 提供了具有侧向保护功能的选择性蚀刻方法。 步骤包括：（a）提供基底; （b）形成多个隧道; （c）在隧道的周壁处形成横向加固结构; （d）通过蚀刻工艺去除侧向强化结构的底部和基底的一部分，以形成下部结构并暴露未加强的结构; 和（f）横向蚀刻非强化结构以形成上部结构。

公开(公告)号：US06781279B2

公开(公告)日：2004-08-24

申请号：US09873382

申请日：2001-06-05

Applicant: Jin-Ho Lee ,  Young-Chul Ko ,  Do-Hyun Kong

Inventor： Jin-Ho Lee ,  Young-Chul Ko ,  Do-Hyun Kong

IPC: H02H100

CPC classification number: B81C3/001 ,  B81B2201/033 ,  B81B2203/0136 ,  B81B2203/0181 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00142 ,  B81C2201/0132 ,  B81C2203/038 ,  Y10T29/42 ,  Y10T29/435

Abstract: A micro-actuator having a stage capable of a see-saw motion and a method for its manufacture are disclosed. In the micro-actuator according to the present invention, a plurality of parallel driving comb-type electrodes are formed on the bottom of the stage, and a plurality of parallel fixed comb-type electrodes are formed on a base plate. At both sides of the stage is a torsion bar that enables the see-saw motion. The torsion bar is supported by a frame comprised of a first frame layer and a second frame layer. The torsion bar and the first frame layer form one body. The first and second frame layers are bonded by a metal eutectic bonding layer between metal layers.

Abstract translation: 公开了一种具有能够进行跷跷板运动的平台的微致动器及其制造方法。 在本发明的微型致动器中，在台架的底部形成多个平行的驱动梳状电极，在基板上形成多个平行的固定梳状电极。 在舞台的两侧是一个扭杆，可以实现跷跷板的动作。 扭杆由包括第一框架层和第二框架层的框架支撑。 扭杆和第一框架层形成一体。 第一和第二框架层通过在金属层之间的金属共晶接合层结合。

公开(公告)号：US06767614B1

公开(公告)日：2004-07-27

申请号：US10021311

申请日：2001-12-19

Applicant: Wolfgang M. J. Hofmann ,  Hercules Neves ,  Noel C. MacDonald ,  Scott G. Adams

Inventor： Wolfgang M. J. Hofmann ,  Hercules Neves ,  Noel C. MacDonald ,  Scott G. Adams

IPC: B32B300

CPC classification number: B81C1/0015 ,  B81B2201/033 ,  B81B2203/0136 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0198 ,  Y10T428/13 ,  Y10T428/24273 ,  Y10T428/24562 ,  Y10T428/24744 ,  Y10T428/24802

Abstract: Improved fabrication processes for microelectromechanical structures, and unique structures fabricated by the improved processes are disclosed. In its simplest form, the fabrication process is a modification of the know SCREAM process, extended and used in such a way as to produce a combined vertical etch and release RIE process, which may be referred to as a “combination etch”. Fabrication of a single-level micromechanical structure using the process of the present invention includes a novel dry etching process to shape and release suspended single crystal silicon elements, the process combining vertical silicon reactive ion etching (Si-RIE) and release etches to eliminate the need to deposit and pattern silicon dioxide mask layers on the sides of suspended structures and to reduce the mechanical stresses in suspended structures caused by deposited silicon dioxide films.

Abstract translation: 公开了用于微机电结构的改进的制造工艺和通过改进的工艺制造的独特结构。 在其最简单的形式中，制造工艺是对已知SCREAM工艺的修改，扩展并以这样的方式使用，以便产生可被称为“组合蚀刻”的组合垂直蚀刻和释放RIE工艺。 使用本发明的方法制造单级微机械结构包括形成和释放悬浮的单晶硅元件的新型干蚀刻工艺，将垂直硅反应离子蚀刻（Si-RIE）和释放蚀刻相组合的工艺消除 需要在悬浮结构的两侧沉积并排列二氧化硅掩模层，并降低由沉积的二氧化硅膜引起的悬浮结构中的机械应力。

公开(公告)号：US20040026366A1

公开(公告)日：2004-02-12

申请号：US10432768

申请日：2003-05-28

Inventor： Andre Sharon ,  Holger Wirtz

IPC: B44C001/22

CPC classification number: B44C1/22 ,  B81B2201/033 ,  B81C1/00007 ,  B81C2201/0109

Abstract: A technique for fabricating precisely machined micro devices and micro systems that facilitates the fabrication of three-dimensional device features and reduces the need for final micro assembly. The technique includes providing a layer of base material on which the micro device/system is to be formed. The base layer optionally undergoes mechanical micro machining such as ultra-precision milling, drilling, turning, or grinding, and/or non-mechanical micro machining including lithography and etching. Next, at least one layer of structural material is deposited on the micro-machined sacrificial layer. The structural layer then optionally undergoes mechanical and/or non-mechanical micro machining. Next, any excess material of the structural layer is removed. Finally, the material of the sacrificial layer is removed to at least partially free the final micro device/system from the base layer.

Abstract translation: 一种用于制造精密加工的微器件和微系统的技术，其有助于制造三维器件特征并减少对最终微组装的需要。 该技术包括提供要在其上形成微器件/系统的基底层。 基层任选地进行机械微加工，例如超精密铣削，钻孔，车削或磨削，和/或非机械微加工，包括光刻和蚀刻。 接下来，在微加工的牺牲层上沉积至少一层结构材料。 结构层然后任选地进行机械和/或非机械微加工。 接下来，除去结构层的任何多余的材料。 最后，去除牺牲层的材料以至少部分地从基底层释放最终的微器件/系统。