公开(公告)号：US20060183309A1

公开(公告)日：2006-08-17

申请号：US10547798

申请日：2004-03-04

Applicant: Micha Asscher ,  Gabriel Kerner

Inventor： Micha Asscher ,  Gabriel Kerner

IPC: H01L21/44

CPC classification number: G03F7/2051 ,  B23K2103/14 ,  B41M5/24 ,  B81C1/00031 ,  B81C2201/0109 ,  B81C2201/0143 ,  B81C2201/0159 ,  H01L21/0272 ,  H01L21/32131 ,  H01L21/76838 ,  H05K3/027 ,  H05K3/048

Abstract: A method for forming a micro- or nano-pattern of a material on a substrate is presented. The method utilizes a buffer layer assisted laser patterning (BLALP). A layered structure is formed on the substrate, this layered structure being in the form of spaced-apart regions of the substrate defined by the pattern to be formed, each region including a weakly physisorbed buffer layer and a layer of the material to be patterned on top of the buffer layer. A thermal process is then applied to the layered structure to remove the remaining buffer layer in said regions, and thus form a stable pattern of said material on the substrate resulting from the buffer layer assisted laser patterning. The method may utilize either positive or negative lithography. The patterning may be implemented using irradiation with a single uniform laser pulse via a standard mask used for optical lithography.

Abstract translation: 提出了在衬底上形成材料的微观或纳米图案的方法。 该方法利用缓冲层辅助激光图案化（BLALP）。 在基板上形成分层结构，该分层结构是由要形成的图案限定的衬底的间隔开的区域的形式，每个区域包括弱物理缓冲层和待图案化的材料层 缓冲层顶部。 然后将热处理施加到层状结构以去除所述区域中的剩余缓冲层，从而由缓冲层辅助激光图案化形成在衬底上的所述材料的稳定图案。 该方法可以利用正光刻或负光刻。 可以通过经由用于光学光刻的标准掩模的单个均匀激光脉冲的照射来实现图案化。

公开(公告)号：US07056759B2

公开(公告)日：2006-06-06

申请号：US10833203

申请日：2004-04-27

Applicant: James R. Przybyla ,  Arthur R. Piehl

Inventor： James R. Przybyla ,  Arthur R. Piehl

IPC: H01L21/02

CPC classification number: B81C1/00801 ,  B81B2201/047 ,  B81B2203/0163 ,  B81C2201/0109 ,  B81C2201/053 ,  B81C2201/056

Abstract: A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited such that a portion of the flexure is left exposed. Contact is established between a flexure-engaging element and the exposed portion of the flexure. The remaining flexure protection layer is removed after the flexure-engaging element is patterned and etched.

Abstract translation: 通过在位于衬底上的至少一个弯曲部分的一部分上建立挠曲保护层来制造微机电系统。 弯曲保护层被沉积成使得弯曲部分的一部分露出。 在挠曲接合元件和挠曲件的暴露部分之间建立接触。 在弯曲接合元件被图案化和蚀刻之后，剩余的挠曲保护层被去除。

公开(公告)号：US07049164B2

公开(公告)日：2006-05-23

申请号：US10268257

申请日：2002-10-09

Applicant: Mike Bruner

Inventor： Mike Bruner

IPC: H01L21/00 ,  H01L21/461

CPC classification number: B81C1/00484 ,  B81B2201/0271 ,  B81B2203/0136 ,  B81C1/00246 ,  B81C1/00333 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0136 ,  B81C2203/0735

Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

Abstract translation: 本发明提供了包封的释放结构，其中间体及其制备方法。 多层结构具有覆盖层，其优选地包括氧化硅和/或氮化硅，并且其形成在耐蚀刻衬底上。 优选地包括氮化硅的图案化器件层嵌入牺牲材料中，优选地包括多晶硅，并且设置在耐蚀刻衬底和覆盖层之间。 进入沟槽或孔形成在覆盖层中，并且牺牲材料通过进入沟槽被选择性地蚀刻，使得器件层的部分从牺牲材料释放。 蚀刻剂优选包含惰性气体氟化物NGF 2X（其中Ng = Xe，Kr或Ar：其中x = 1,2或3）。 在蚀刻该牺牲材料之后，进入沟槽被密封以将器件层的释放部分封装在耐蚀刻衬底和覆盖层之间。 本发明对于制造具有多个释放特征的MEMS器件，多腔器件和器件特别有用。

公开(公告)号：US20060054972A1

公开(公告)日：2006-03-16

申请号：US10518065

申请日：2002-12-11

Applicant: Silvia Kronmueller ,  Ulf Wilhelm

Inventor： Silvia Kronmueller ,  Ulf Wilhelm

IPC: H01L27/12

CPC classification number: B81C1/00095 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0109 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: A method and device are for anchoring fixed structural elements and, e.g., for anchoring electrodes for components, e.g., SOI wafer components, whose component structure is formed in a silicon layer on top of a substrate used as support. The fixed element may be mechanically connected to the substrate via at least one anchoring element made of an anchoring material and extending through the silicon layer. In the case of an SOI wafer, the anchoring element may extend through the silicon layer and the sacrificial layer of the SOI wafer. To this end, in the area of the surface of the fixed element, at least one recess is made in the silicon layer, which may extend through the entire silicon layer and the sacrificial layer down to the substrate. The recess may then be filled with an anchoring material, so that the fixed element is mechanically connected to the substrate via the anchoring element that is thereby created.

Abstract translation: 一种方法和装置用于锚固固定的结构元件，并且例如用于锚定用于部件的电极，例如SOI晶片部件，其SOI部件结构形成在用作支撑件的基板的顶部上的硅层中。 固定元件可以经由至少一个由锚固材料制成并延伸穿过硅层的锚固元件机械连接到基板。 在SOI晶片的情况下，锚定元件可以延伸穿过SOI晶片的硅层和牺牲层。 为此，在固定元件表面的区域中，在硅层中形成至少一个凹槽，硅层可延伸穿过整个硅层和牺牲层向下延伸至衬底。 然后可以用锚固材料填充凹部，使得固定元件通过由此产生的锚固元件机械地连接到基板。

公开(公告)号：US07008812B1

公开(公告)日：2006-03-07

申请号：US09583386

申请日：2000-05-30

Applicant: L. Richard Carley

Inventor： L. Richard Carley

IPC: H01L21/3065

CPC classification number: B81B7/0077 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C1/00936 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0828

Abstract: The disclosed fabrication methodology addresses the problem of creating low-cost micro-electro-mechanical devices and systems, and, in particular, addresses the problem of delicate microstructures being damaged by the surface tension created as a wet etchant evaporates. This disclosure demonstrates a method for employing a dry plasma etch process to release encapsulated microelectromechanical components.

Abstract translation: 所公开的制造方法解决了创建低成本微机电装置和系统的问题，并且特别地，解决了由湿蚀刻剂蒸发而产生的表面张力损坏的精细微结构的问题。 该公开内容示出了使用干等离子体蚀刻工艺来释放封装的微机电部件的方法。

公开(公告)号：US06991953B1

公开(公告)日：2006-01-31

申请号：US10112962

申请日：2002-03-28

Applicant: Mike Bruner ,  Richard Yeh ,  Jim Hunter

Inventor： Mike Bruner ,  Richard Yeh ,  Jim Hunter

IPC: H01L21/308 ,  H01L21/469

CPC classification number: B81C1/00484 ,  B81B2201/0271 ,  B81B2203/0136 ,  B81C1/00246 ,  B81C1/00333 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0136 ,  B81C2203/0735

Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. A multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising poly-silicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material is selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x, (wherein NG=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

Abstract translation: 本发明提供了包封的释放结构，其中间体及其制备方法。 多层结构具有覆盖层，其优选地包括氧化硅和/或氮化硅，并且其形成在耐蚀刻衬底上。 优选地包括氮化硅的图案化器件层嵌入牺牲材料中，优选地包括多晶硅，并且设置在耐蚀刻衬底和覆盖层之间。 进入沟槽或孔形成在覆盖层中，并且牺牲材料被选择性地蚀刻通过进入沟槽，使得器件层的部分从牺牲材料释放。 蚀刻剂优选包含惰性气体氟化物NGF 2X（其中NG = Xe，Kr或Ar：其中x = 1,2或3）。 在蚀刻该牺牲材料之后，进入沟槽被密封以将器件层的释放部分封装在耐蚀刻衬底和覆盖层之间。 本发明对于制造具有多个释放特征的MEMS器件，多腔器件和器件特别有用。

公开(公告)号：US20050250236A1

公开(公告)日：2005-11-10

申请号：US11121690

申请日：2005-05-03

Applicant: Hideki Takeuchi ,  Emmanuel Quevy ,  Tsu-Jae King ,  Roger Howe

Inventor： Hideki Takeuchi ,  Emmanuel Quevy ,  Tsu-Jae King ,  Roger Howe

IPC: H01L21/00

CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

Abstract: In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

Abstract translation: 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

公开(公告)号：US20050239231A1

公开(公告)日：2005-10-27

申请号：US10833203

申请日：2004-04-27

Applicant: James Przybyla ,  Arthur Piehl

Inventor： James Przybyla ,  Arthur Piehl

IPC: B81B3/00 ,  G11B5/48 ,  G11B21/16 ,  H01L21/00

CPC classification number: B81C1/00801 ,  B81B2201/047 ,  B81B2203/0163 ,  B81C2201/0109 ,  B81C2201/053 ,  B81C2201/056

Abstract: A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited such that a portion of the flexure is left exposed. Contact is established between a flexure-engaging element and the exposed portion of the flexure. The remaining flexure protection layer is removed after the flexure-engaging element is patterned and etched.

Abstract translation: 通过在位于衬底上的至少一个弯曲部分的一部分上建立挠曲保护层来制造微机电系统。 弯曲保护层被沉积成使得弯曲部分的一部分露出。 在挠曲接合元件和挠曲件的暴露部分之间建立接触。 在弯曲接合元件被图案化和蚀刻之后，剩余的挠曲保护层被去除。

公开(公告)号：US20050230257A1

公开(公告)日：2005-10-20

申请号：US11048298

申请日：2005-01-31

Applicant: Hubert Jerominek ,  Patrice Topart

Inventor： Hubert Jerominek ,  Patrice Topart

IPC: B81B3/00 ,  C25D1/00 ,  G02B26/08 ,  C25D1/06 ,  G01N9/30

CPC classification number: B81C1/00142 ,  B81B2201/042 ,  B81B2201/047 ,  B81C2201/0109 ,  B81C2201/053 ,  C25D1/003 ,  G02B26/0841

Abstract: A process for making a microdevice that includes the steps of providing a base member and selectively electroforming a support member for supporting a microplatform with respect to the base member. The process also includes the steps of selectively electroforming the microplatform and forming a flexible hinge member for hingedly connecting the microplatform to the support member and allowing relative movement of the microplatform with respect to the support member. This microdevice, when compared to prior art devices, can have improved mechanical strength, rigidity, low deformation, and high planarity.

Abstract translation: 一种用于制造微型装置的方法，包括以下步骤：提供基底构件并选择性地电铸相对于基底构件支撑微平台的支撑构件。 该方法还包括以下步骤：选择性地电铸微型平台并形成用于将微平台与支撑构件铰接连接并允许微平台相对于支撑构件相对运动的柔性铰链构件。 该微型装置与现有技术的装置相比可以具有改善的机械强度，刚性，低变形和高平面度。

公开(公告)号：US06930364B2

公开(公告)日：2005-08-16

申请号：US09952626

申请日：2001-09-13

Applicant: Mike Bruner

Inventor： Mike Bruner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H01L21/46 ,  H02N1/00 ,  H03H9/24 ,  H01L27/14

CPC classification number: B81C1/00484 ,  B81B2201/0271 ,  B81B2203/0136 ,  B81C1/00246 ,  B81C1/00333 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0136 ,  B81C2203/0735

Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

Abstract translation: 本发明提供了包封的释放结构，其中间体及其制备方法。 多层结构具有覆盖层，其优选地包括氧化硅和/或氮化硅，并且其形成在耐蚀刻衬底上。 优选地包括氮化硅的图案化器件层嵌入牺牲材料中，优选地包括多晶硅，并且设置在耐蚀刻衬底和覆盖层之间。 进入沟槽或孔形成在覆盖层中，并且牺牲材料通过进入沟槽被选择性地蚀刻，使得器件层的部分从牺牲材料释放。 蚀刻剂优选包含惰性气体氟化物NGF 2X（其中Ng = Xe，Kr或Ar：其中x = 1,2或3）。 在蚀刻该牺牲材料之后，进入沟槽被密封以将器件层的释放部分封装在耐蚀刻衬底和覆盖层之间。 本发明对于制造具有多个释放特征的MEMS器件，多腔器件和器件特别有用。