公开(公告)号：US09540228B2

公开(公告)日：2017-01-10

申请号：US14748012

申请日：2015-06-23

Applicant: InvenSense, Inc.

Inventor： Peter Smeys ,  Jong Il Shin ,  Jongwoo Shin

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0041 ,  B81B2207/012 ,  B81B2207/094 ,  B81C1/00293 ,  B81C2201/013 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2203/035 ,  B81C2203/0792

Abstract: A MEMS device is disclosed. The MEMS device includes a first substrate. At least one structure is formed within the first substrate. The first substrate includes at least one first conductive pad thereon. The MEMS device also includes a second substrate. The second substrate includes a passivation layer. The passivation layer includes a plurality of layers. A top layer of the plurality of layers comprises an outgassing barrier layer. At least one second conductive pad and at least one electrode are coupled to the top layer. At least one first conductive pad is coupled to the at least one second conductive pad.

Abstract translation: 公开了MEMS器件。 MEMS器件包括第一衬底。 在第一基板内形成至少一个结构。 第一衬底包括至少一个第一导电焊盘。 MEMS器件还包括第二衬底。 第二基板包括钝化层。 钝化层包括多个层。 多个层的顶层包括除气阻挡层。 至少一个第二导电焊盘和至少一个电极耦合到顶层。 至少一个第一导电焊盘耦合到所述至少一个第二导电焊盘。

公开(公告)号：US09499393B2

公开(公告)日：2016-11-22

申请号：US14616017

申请日：2015-02-06

Applicant: MKS Instruments, Inc.

Inventor： Lei Gu ,  Stephen F. Bart

IPC: H01L27/14 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0048 ,  B81B2201/0264 ,  B81C1/00325 ,  B81C1/00547 ,  B81C2201/013 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Stress relief structures and methods that can be applied to MEMS sensors requiring a hermetic seal and that can be simply manufactured are disclosed. The system includes a sensor having a first surface and a second surface, the second surface being disposed away from the first surface, the second surface also being disposed away from a package surface and located between the first surface and the package surface, a number of support members, each support member extending from the second surface to the package surface, the support members being disposed on and operatively connected to only a portion of the second surface. The support member are configured to reduce stress produced by package-sensor interaction.

Abstract translation: 公开了可应用于需要气密密封并且可以简单制造的MEMS传感器的应力消除结构和方法。 所述系统包括具有第一表面和第二表面的传感器，所述第二表面远离所述第一表面设置，所述第二表面还远离封装表面设置并位于所述第一表面和所述封装表面之间， 支撑构件，每个支撑构件从第二表面延伸到包装表面，支撑构件设置在第二表面的一部分上并且可操作地连接到第二表面。 支撑构件被配置为减少由包传感器相互作用产生的应力。

公开(公告)号：US09499392B2

公开(公告)日：2016-11-22

申请号：US14172383

申请日：2014-02-04

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: B81B3/00 ,  B81C1/00 ,  B06B1/02 ,  G10K11/18

CPC classification number: B06B1/0292 ,  B06B1/02 ,  B81B3/0021 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2203/0118 ,  B81C2203/0735 ,  B81C2203/0771 ,  G10K9/12 ,  G10K11/18

Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

Abstract translation: 描述了CMOS超声波传感器及其制造方法。 所述方法可以包括在第一晶片上形成空腔并将第一晶片接合到第二晶片。 可以处理第二晶片以形成用于空腔的膜。 可以提供对腔的电接入。

公开(公告)号：US20160325983A1

公开(公告)日：2016-11-10

申请号：US15212896

申请日：2016-07-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. HERRIN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

IPC: B81B3/00 ,  H01H59/00 ,  G06F17/50

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US09475690B2

公开(公告)日：2016-10-25

申请号：US14283098

申请日：2014-05-20

Applicant: UChicago Argonne, LLC

Inventor： Anirudha V. Sumant ,  Federico Buja ,  Willem Merlijn van Spengen

IPC: H01L21/00 ,  B81B3/00 ,  C23C14/16 ,  B81C1/00

CPC classification number: B81B3/0024 ,  B81B3/0075 ,  B81C1/0038 ,  B81C2201/013 ,  B81C2201/017 ,  B81C2201/0171 ,  B81C2201/0176 ,  C23C14/16

Abstract: Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.

Abstract translation: 纳米/微机电系统（MEMS）中的纳米晶金刚石涂层显示出应力。 掺杂的纳米金刚石涂层表现出增加的应力。 碳化物形成金属涂层减少了面内应力。 此外，没有任何金属涂层，简单地生长厚度在3-4微米范围内的UNCD或NCD也显着降低了面内应力。 这种涂层可用于MEMS应用。

公开(公告)号：US20160273916A1

公开(公告)日：2016-09-22

申请号：US15037532

申请日：2014-10-21

Applicant: SAGEM DEFENSE SECURITE

Inventor： Alain JEANROY ,  Philippe ONFROY

IPC: G01C19/574 ,  G01C19/5769

CPC classification number: G01C19/574 ,  B81B3/0021 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81C1/00547 ,  B81C2201/013 ,  G01C19/5733 ,  G01C19/5769

Abstract: An inertial sensor comprising a frame to which at least two seismic bodies are connected by resilient means so as to be movable in a suspension plane, and transducers to keep the seismic bodies vibrating and to determine a relative movement of the seismic bodies relative to one another, characterized in that the seismic bodies have a single shape and a single mass, and in that the seismic bodies comprise interlocking parts such that the seismic bodies are nested inside one another while being movable in the suspension plane relative to the other of the seismic bodies, with the seismic bodies having centres of gravity that coincide with one another. A method for manufacturing such a sensor.

Abstract translation: 一种惯性传感器，包括框架，至少两个地震体通过弹性装置连接到该框架上，以便能够在悬挂平面中移动，以及换能器，以保持地震体的振动并确定地震体相对于彼此的相对运动 其特征在于，地震体具有单一形状和单一质量，并且地震体包括互锁部分，使得地震体彼此嵌套，同时相对于另一个地震体在悬架平面中可移动 地震体的重心相互重合。 一种用于制造这种传感器的方法。

公开(公告)号：US20160229684A1

公开(公告)日：2016-08-11

申请号：US15024704

申请日：2014-09-23

Applicant: MOTION ENGINE INC.

Inventor： Robert Mark Boysel

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0078 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0163 ,  B81B2207/092 ,  B81C1/00269 ,  B81C2201/013 ,  G01C19/5783 ,  G01P15/0802 ,  G01P15/125

Abstract: A micro-electro-mechanical system (MEMS) device and a manufacturing method are provided. The device includes top and bottom cap wafers and a MEMS wafer disposed between the top cap wafer and the bottom cap wafer. The top, bottom and MEMS wafers define sidewalls of a cavity. A MEMS structure is housed within the cavity and is movable relative to the top and bottom caps. At least one electrode is provided in one of the wafers, the electrode being operatively coupled to the MEMS structure to detect or induce a movement thereof. A support structure extends through the cavity from the top cap wafer to the bottom cap wafer to prevent bowing in the top cap and bottom cap wafers.

Abstract translation: 提供了一种微电子机械系统（MEMS）装置和制造方法。 该装置包括顶盖和底盖晶片以及设置在顶盖晶片和底盖晶片之间的MEMS晶片。 顶部，底部和MEMS晶片限定空腔的侧壁。 MEMS结构容纳在腔内并且可相对于顶盖和底盖移动。 在一个晶片中提供至少一个电极，电极可操作地耦合到MEMS结构以检测或引起其移动。 支撑结构通过空腔从顶盖晶片延伸到底盖晶片，以防止在顶盖和底盖晶片中弯曲。

公开(公告)号：US09395533B2

公开(公告)日：2016-07-19

申请号：US14502255

申请日：2014-09-30

Applicant: Pixtronix, Inc.

Inventor： Teruo Sasagawa

IPC: G01P15/08 ,  G02B26/02 ,  B81C1/00 ,  G09G5/10 ,  G02B26/08

CPC classification number: G02B26/02 ,  B81B2201/047 ,  B81C1/00039 ,  B81C1/00142 ,  B81C1/0015 ,  B81C1/00952 ,  B81C2201/013 ,  B81C2201/016 ,  G02B26/0841 ,  G02B26/0858 ,  G09G3/3433 ,  G09G5/10 ,  G09G2300/04

Abstract: This disclosure provides systems, methods and apparatus including devices that include a layer of passivation material covering at least a portion of an exterior surface of a thin film component within a microelectomechanical device. The thin film component may include an electrically conductive layer that connects via an anchor to a conductive surface on a substrate. The disclosure further provides processes for providing a layer of passivation material on an exterior surface of a thin film component and for electrically connecting that thin film component to a conductive surface on a substrate.

Abstract translation: 本公开提供了包括装置的系统，方法和装置，其包括覆盖微机电装置内的薄膜部件的外表面的至少一部分的钝化材料层。 薄膜部件可以包括通过锚固件连接到基板上的导电表面的导电层。 本公开还提供了在薄膜部件的外表面上提供钝化材料层并将该薄膜部件电连接到基板上的导电表面的方法。

公开(公告)号：US20160190245A1

公开(公告)日：2016-06-30

申请号：US14925530

申请日：2015-10-28

Applicant: The University of North Carolina at Chapel Hill

Inventor： James F. Cahoon ,  Joseph D. Christesen ,  Christopher W. Pinion

IPC: H01L29/06 ,  H01L21/306 ,  H01L21/283 ,  B81B3/00 ,  G01Q60/38 ,  H01L29/16 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/09 ,  H01L21/02 ,  B81C1/00

CPC classification number: H01L29/0673 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81C1/00111 ,  B81C1/0015 ,  B81C2201/013 ,  B81C2201/0171 ,  B81C2201/0176 ,  G01Q60/38 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/283 ,  H01L21/30604 ,  H01L29/16 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/09 ,  Y02E10/50

Abstract: Methods of chemically encoding high-resolution shapes in silicon nanowires during metal nanoparticle catalyzed vapor-liquid-solid growth or vapor-solid-solid growth are provided. In situ phosphorus or boron doping of the silicon nanowires can be controlled during the growth of the silicon nanowires such that high-resolution shapes can be etched along a growth axis on the silicon nanowires. Nanowires with an encoded morphology can have high-resolution shapes with a size resolution of about 1,000 nm to about 10 nm and comprise geometrical shapes, conical profiles, nanogaps and gratings.

Abstract translation: 提供了在金属纳米颗粒催化的气 - 液 - 固 - 固生长或气 - 固 - 固生长期间在硅纳米线中化学编码高分辨率形状的方法。 可以在硅纳米线的生长期间控制硅纳米线的原位磷或硼掺杂，使得可以沿硅纳米线上的生长轴蚀刻高分辨率形状。 具有编码形态的纳米线可以具有约1000nm至约10nm的尺寸分辨率的高分辨率形状，并且包括几何形状，锥形轮廓，纳米光栅和光栅。

公开(公告)号：US20160178895A1

公开(公告)日：2016-06-23

申请号：US14599507

申请日：2015-01-18

Applicant: APPLE INC.

Inventor： Yuval Gerson ,  Naftali Chayat ,  Noel Axelrod ,  Alexander Shpunt

IPC: G02B26/10 ,  B81C1/00 ,  G02B26/08

CPC classification number: G02B26/101 ,  B81B2201/04 ,  B81C1/0015 ,  B81C2201/013 ,  G01S7/4817 ,  G01S17/10 ,  G01S17/42 ,  G01S17/89 ,  G02B26/085

Abstract: A scanning device includes a substrate, which is etched to define an array of two or more parallel rotating members and a gimbal surrounding the rotating members. First hinges connect the gimbal to the substrate and defining a first axis of rotation, about which the gimbal rotates relative to the substrate. Second hinges connect the rotating members to the support and defining respective second, mutually-parallel axes of rotation of the rotating members relative to the support, which are not parallel to the first axis.

Abstract translation: 扫描装置包括被蚀刻以限定两个或更多个平行旋转构件的阵列的基底和围绕旋转构件的万向节。 第一铰链将万向架连接到基板并且限定第一旋转轴线，万向架绕该基板相对于基板旋转。 第二铰链将旋转构件连接到支撑件并且限定旋转构件相对于不平行于第一轴线的支撑件的相应的第二相互平行的旋转轴线。